Order this document by MRF10500/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) 500 W (PEAK) 1025 – 1150 MHz MICROWAVE POWER TRANSISTORS NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Industry Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching • Characterized with 10 µs, 1% Duty Cycle Pulses CASE 355D–02, STYLE 1 MRF10500 CASE 355H–01, STYLE 1 MRF10501 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 65 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 29 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 1460 8.3 Watts W/°C Storage Temperature Range Tstg – 65 to + 200 °C TJ 200 °C Symbol Max Unit RθJC 0.12 °C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @ 32 µs, 2%.) REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF10500 MRF10501 2–1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 — — Vdc Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 25 mAdc hFE 20 — — — Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz) GPB 8.5 9.0 — dB Collector Efficiency (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz) η 40 45 — % Load Mismatch (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) ψ Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS No Degradation in Output Power C2 L1 Z5 C3 C4 + – + D.U.T. C1 RF INPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 RF OUTPUT Z1–Z9 — Microstrip, See Details Board Material — Teflon, Glass Laminate Dielectric Thickness = 0.030″ εr = 2.55, 2 Oz. Copper C1 — 82 pF 100 Mil Chip Capacitor C2 — 39 pF 100 Mil Chip Capacitor C3 — 0.1 µF C4 — 100 µF, 100 Vdc, Electrolytic L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long .700 .150 .160 .625 .081 .355 1.123 2.000 .650 1.725 .105 .081 .100 .216 .081 1.309 .644 .365 1.108 .500 0.140 Figure 1. Test Circuit MRF10500 MRF10501 2–2 MOTOROLA RF DEVICE DATA POUT, OUTPUT POWER (WATTS) 600 450 300 f = 1090 MHz VCC = 50 Volts 150 0 15 30 45 60 75 100 115 PIN, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power 1120 1150 ZOUT (ZOL*) 1090 1060 f = 1030 MHz f = 1030 MHz Zin 1150 Zo = 10 Ω 1060 1090 1120 POUT = 500 W Pk VCC = 50 V f MHz Zin OHMS ZOL* (ZOUT) OHMS 1030 55.3 + j2.25 62.6 + j1.89 1060 56.2 + j0.25 2.56 + j2.09 1090 55.2 – j1.45 2.12 + j2.29 1120 53.7 – j1.35 21.9 + j2.15 1150 3.15 – j1.35 91.6 + j1.62 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF10500 MRF10501 2–3 PACKAGE DIMENSIONS –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q 2 PL U M 0.76 (0.030) M T A M B M 1 K R DIM A B C D E H J K M N Q R U –B– 3 2 STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE D N J E C H INCHES MIN MAX 0.990 1.010 0.375 0.395 0.150 0.165 0.195 0.205 0.055 0.065 0.120 0.130 0.003 0.006 0.570 0.630 45 _REF 0.590 0.610 0.115 0.125 0.395 0.405 0.800 BSC MILLIMETERS MIN MAX 25.15 25.65 9.53 10.03 3.81 4.19 4.95 5.21 1.40 1.65 3.05 3.30 0.08 0.15 14.48 16.00 45 _REF 14.99 15.49 2.92 3.18 10.03 10.29 20.32 BSC –T– SEATING PLANE CASE 355D–02 ISSUE B MRF10500 –A– M Q 2 PL 0.76 (0.030) U 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K R –B– 3 2 D J N STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE E C H DIM A B C D E H J K M N Q R U INCHES MIN MAX 0.990 1.010 0.375 0.395 0.150 0.165 0.195 0.205 0.055 0.065 0.120 0.130 0.003 0.006 0.780 0.820 45 _ REF 0.590 0.610 0.115 0.125 0.395 0.405 0.800 BSC MILLIMETERS MIN MAX 25.15 25.65 9.53 10.03 3.81 4.19 4.95 5.21 1.40 1.65 3.05 3.30 0.08 0.15 19.81 20.83 45 _ REF 14.99 15.49 2.92 3.18 10.03 10.29 20.32 BSC –T– SEATING PLANE CASE 355H–01 ISSUE A MRF10501 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF10500 MRF10501 2–4 ◊ *MRF10500/D* MRF10500/D MOTOROLA RF DEVICE DATA