MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18060B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain — 13 dB (Typ) @ 60 Watts CW Efficiency — 45% (Typ) @ 60 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 1.90 - 1.99 GHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF18060BR3 CASE 465A - 06, STYLE 1 NI - 780S MRF18060BSR3, MRF18060BLSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 180 1.03 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.97 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 1 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 6 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.27 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 4.7 — S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 160 — pF Output Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 740 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.7 — pF 11.5 13 — 40 45 — — — - 10 OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Common - Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Gps Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) η Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 - 1990 MHz) dB % IRL Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) dB Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch - to - batch consistency. MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. Z5 VDD VGG R1 C3 R2 C7 Z2 Freescale Semiconductor, Inc... Z6 Z7 C6 Z3 C5 C4 C1, C3 C2 C4, C8 C5 C6 C7, C9 R1, R2 R3 Z4 C9 Z1 C2 C1 R3 RF INPUT + RF OUTPUT C8 DUT 10 pF, 100B Chip Capacitors 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF, 100B Chip Capacitors 1.0 pF, 100B Chip Capacitor 2.2 pF, 100B Chip Capacitor 0.3 pF, 100B Chip Capacitors 10 kΩ Chip Resistors (0805) 1.0 kΩ Chip Resistor (0805) Z1 Z2 Z3 Z4 Z5 Z6 Z7 PCB 0.60″ x 0.09″ Microstrip 1.00″ x 0.09″ Microstrip 0.51″ x 0.94″ Microstrip 0.59″ x 0.98″ Microstrip 0.79″ x 0.09″ Microstrip 1.38″ x 0.09″ Microstrip 0.79″ x 0.09″ Microstrip Teflon Glass Figure 1. 1930 - 1990 MHz Test Fixture Schematic VBIAS VSUPPLY C2 R1 C1 R2 C9 C4 C3 C7 R3 C6 C5 C8 Ground Ground MRF18060 Figure 2. 1930 - 1990 MHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 3 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Vbias ÎÎÎ ÎÎÎ ÎÎÎ C1 T1 T1 R1 R5 R2 Vsupply C2 C4 R3 T2 + C3 R4 C5 Freescale Semiconductor, Inc... R6 RF INPUT Z1 Z2 C6 C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 Z6 Z3 Z4 Z7 RF OUTPUT Z5 C7 C8 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU - P (0805) 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU - P (0805) 1 pF Chip Capacitor, ACCU - P (0805) 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ, SMD Potentiometer T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.159″ x 0.055″ Microstrip Z2 0.982″ x 0.055″ Microstrip Z3 0.087″ x 0.055″ Microstrip Z4 0.512″ x 0.787″ Microstrip Z5 0.433″ x 1.220″ Microstrip Z6 1.039″ x 0.118″ Microstrip Z7 0.268″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon Glass, εr = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic Vbias Î ÎÎ Î Î Ground C4 R1 C1 R2 R3 T1 R4 T2 R5 C2 C3 C7 C5 R6 MRF18060 ÎÎÎÎÎÎ ÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎ Vsupply C8 C6 ÎÎ Î ÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎ Î Î MRF18060 Figure 4. 1800 - 2000 MHz Demo Board Component Layout MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. 16 100 15 90 Pout , OUTPUT POWER (WATTS) IDQ = 750 mA 13 500 mA 12 11 300 mA 10 100 mA 9 VDD = 26 Vdc f = 1880 MHz 80 60 40 30 100 18 Pout , OUTPUT POWER (WATTS) 70 3W 60 50 VDD = 26 Vdc IDQ = 500 mA 30 1W 20 0.5 W 55 70 1880 1900 Figure 7. Output Power versus Frequency 45 Pout 50 35 30 30 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 20 1 2 3 4 Pin, INPUT POWER (WATTS) 20 5 6 Figure 8. Output Power and Efficiency versus Input Power 0 −2 Gps −4 13.5 −6 13.0 −8 12.5 −10 12.0 −12 11.5 −14 IRL −16 VDD = 26 Vdc IDQ = 500 mA 10.5 10.0 1800 25 15 0 14.5 11.0 40 40 15.0 14.0 G ps, POWER GAIN (dB) 50 h 60 0 1700 30 80 10 1840 1860 f, FREQUENCY (MHz) 28 60 0 1820 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) 90 10 1800 20 Figure 6. Output Power versus Supply Voltage Pin = 6 W 40 VDD = 26 Vdc IDQ = 500 mA 10 0 90 80 1W 20 Figure 5. Power Gain versus Output Power Pout , OUTPUT POWER (WATTS) Freescale Semiconductor, Inc... 10 Pout, OUTPUT POWER (WATTS) 2.5 W 50 8 1 Pin = 5 W 70 η, DRAIN EFFICIENCY (%) 14 1900 f, FREQUENCY (MHz) 2000 IRL, INPUT RETURN LOSS (dB) G ps, POWER GAIN (dB) TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) −18 −20 2100 Figure 9. Wideband Gain and IRL (at Small Signal) MOTOROLA RF DEVICE DATA MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 5 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Zo = 5 Ω Zload Freescale Semiconductor, Inc... f = 1700 MHz f = 1700 MHz f = 2100 MHz Zsource f = 2100 MHz VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW f MHz Zsource Ω Zload Ω 1700 0.60 - j2.53 2.27 - j3.44 1800 0.80 - j3.20 2.05 - j3.05 1900 0.92 - j3.42 1.90 - j2.90 2000 1.07 - j3.59 1.64 - j2.88 2100 1.31 - j4.00 1.29 - j2.99 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Input and Output Impedance MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M bbb Freescale Semiconductor, Inc... N R (INSULATOR) M T A B M M ccc M T A M M aaa M T A M S (LID) ccc H M T A B M (LID) B M (INSULATOR) B M C F E A T A SEATING PLANE (FLANGE) CASE 465 - 06 ISSUE F NI - 780 MRF18060BR3 DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N R (LID) ccc M M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) MOTOROLA RF DEVICE DATA F T SEATING PLANE CASE 465A - 06 ISSUE F NI - 780S MRF18060BSR3, MRF18060BLSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF18060BR3 MRF18060BSR3 MRF18060BLSR3 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, MRF18060B/D 8 Go to: www.freescale.com