Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 38 Watts Avg. Power Gain — 14 dB Efficiency — 25.5% IM3 — 37.5 dBc ACPR — –41 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Qualified Up to a Maximum of 32 VDD Operation 2170 MHz, 180 W AVG., 2 x W–CDMA, 28 V LATERAL N–CHANNEL RF POWER MOSFET CASE 375D–04, STYLE 1 NI–1230 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 437.5 2.5 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF5P21180 1 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 180 W CW Case Temperature 80°C, 38 W CW Max Unit °C/W RθJC 0.40 0.40 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2.5 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 800 mAdc) VGS(Q) — 3.6 — Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.26 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 5 — S Crss — 1.7 — pF Characteristic OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12.5 14 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 23 25.5 — % IM3 — –37.5 –35 dBc ACPR — –41 –38 dBc IRL — –14 –9 dB Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) (1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push–pull configuration. MRF5P21180 2 MOTOROLA RF DEVICE DATA Z1, Z22 Z2, Z21 Z3, Z20 Z4, Z19 Z5, Z6 Z7, Z8 1.000″ x 0.066″ Microstrip 0.760″ x 0.113″ Microstrip 0.068″ x 0.066″ Microstrip 1.672″ x 0.066″ Microstrip 0.318″ x 0.066″ Microstrip 0.284″ x 0.180″ Microstrip Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 PCB 0.256″ x 0.650″ Microstrip 1.030″ x 0.035″ Microstrip 0.500″ x 0.650″ Microstrip 0.550″ x 0.058″ Microstrip 0.353″ x 0.066″ Microstrip Taconic RF–35, 0.76 mm, εr = 3.5 Figure 1. MRF5P21180 Test Circuit Schematic Table 1. MRF5P21180 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1, C2, C3, C4 30 pF Chip Capacitors 100B300JCA500X ATC C5, C6, C7, C8 5.6 pF Chip Capacitors 100B5R6JCA500X ATC C9, C10 10 µF Tantalum Capacitors T495X106K035AS4394 Kemet C11, C12 1000 pF Chip Capacitors 100B102JCA500X ATC C13, C14, C15, C16 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C17, C18, C19, C20, C21, C22 22 µF Tantalum Capacitors T491X226K035AS4394 Kemet C23, C24 1.0 µF Tantalum Capacitors T491C105M050 Kemet R1, R2, R3, R4 10 W, 1/8 W Chip Resistors R5 1.0 kW, 1/8 W Chip Resistor WB1, WB2, WB3, WB4 Wear Blocks 5 x 180 x 500 mil Brass Shim Motorola MOTOROLA RF DEVICE DATA MRF5P21180 3 CUT OUT AREA MRF5P21180 Rev 5 Figure 2. MRF5P21180 Test Circuit Component Layout MRF5P21180 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS η - ,." /01 - '234*" % - 5 677897 " () 677897 :6.8;3 4 () <6;;9= 6;,>8,1< 96?@234 - 4 , A 4B 7/C6C8=81D '* " +$+::+',* η"+ $ $&+'B* +',.*" +',.* "++$+ +',* !" $%$& ' ()* Figure 3. 2–Carrier W–CDMA Broadband Performance 4 5 5 5 4 5 4 "+( +$ "++$+ +',* % - 5 - ,. ! - ()" ! - () >//;9 9607959;1" () /;9 :6.8;3 $ + : +',.* - ,. ! - ()" ! - () >//;9 9607959;1" () /;9 :6.8;3 % - 5 5 5 5 5 7, 7,97 1< 7,97 1< 7,97 - ,." /01 - '$*" % - 5 >//;9 9607959;1" 9;197 79E09;.D - () 4 Figure 5. Third Order Intermodulation Distortion versus Output Power /01 "++$+',5* " $ + : +',.* Figure 4. Two–Tone Power Gain versus Output Power /01" $ ':* $ /01" $ ':* $ ,96= , - 4 ,5 ' * , - 4 ,5 ' * - ,." % - 5 0=9, " µ9. '/;*" 59. '/!!* 9;197 79E09;.D - () .106= $ : ' ()* 8;" $ ',5* Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF5P21180 5 - ,." % - 5 ! - ()" ! - () F " () A 4 () 6;,>8,1< 96?@234 - 4 , A 4B 7/C6C8=81D '* η A A 4 () 4 () A 4 () 4 () <6;;9= ',* +',.*"++',.* η"+ +$ $&+'B*"+ "+$+ +',* Figure 9. 2-Carrier W-CDMA Spectrum Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power ++'(:+F+ :+++* &+'B* !" $%$& ' ()* /01" $ ':* 4 4 4 4 A 4 () $G$$ ',* Figure 10. CCDF W–CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal H" H $ $$ '°* <8 6C/29 376< ,8=6D .6=.0=619, 8; </07 F 65979 ,768; .0779;14 8!9 191 61 9=92619, 1959761079 <629 ./779=619, 1/ C91197 1<6; ±B /! 1<9 1<9/7918.6= 79,8.18/; !/7 5916= !68=0794 828,9 !6.1/7 CD !/7 8; 6 6718.0=67 6=8.618/;4 Figure 11. MTBF Factor versus Junction Temperature MRF5P21180 6 MOTOROLA RF DEVICE DATA / - Ω =/6,I ! - () ! - () ! - () ! - () /07.9 - " % - F 5" /01 - 234 f MHz Zload Ω Zsource Ω 2110 5.39 – j13.89 3.69 – j10.51 2140 5.66 – j13.99 3.81 – j10.66 2170 5.53 – j14.51 3.79 – j11.05 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. ;01 61.<8;3 91>/7? 928.9 ;,97 91 Z source 0101 61.<8;3 91>/7? Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5P21180 7 PACKAGE DIMENSIONS 2X Q CCC A A $:J 4 $$ $: : $$: $ : $ &4 4 4 $: J (4 4 $: ( : $:$ 4 '4* & G$ &4 4 $ $$ $$ $: 4 '4* :$ :$4 G 4 B L 4X 1 2 3 4 B (FLANGE) 4X K D 666 ... ... R (LID) N (LID) F H C E S PIN 5 T M (INSULATOR) CCC SEATING PLANE (INSULATOR) CCC CASE 375D–04 ISSUE C NI–1230 DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 4 4 4 4 4 4 4 4 4 4 4 4 4+: 4 4 4 4 4+: 4 4 4 4 4 4 4 4 4 4 4+$ 4+$ 4+$ :&$ J 4 4 4 4 4 MILLIMETERS MIN MAX 4 4 4 4 4 4 4 4 4 4 4 4 4+: 4 4 4 4 4+: 4 4 4 4 4 4 4 4 4 4 4+$ 4+$ 4+$ $ $ :$ Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF5P21180 8 ◊ MOTOROLA RF DEVICE DATA MRF5P21180/D This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.