MOTOROLA MRF372

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by MRF372/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in
32 volt transmitter equipment.
• Typical Narrowband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — –35 dBc
• Typical Broadband Two–Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — –31 dBc
• Internally Matched, Controlled Q, for Ease of Use
• Integrated ESD Protection
• 100% Tested for Load Mismatch Stress at All Phase Angles
with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
470 – 860 MHz, 180 W, 32 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375G–04, STYLE 1
NI–860C3
MAXIMUM RATINGS (1)
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
68
Vdc
Gate–Source Voltage
VGS
– 0.5, +15
Vdc
Drain Current – Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
350
2.0
W
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.5
°C/W
(1) Each side of device measured separately.
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF372
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
68
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
—
0.28
0.45
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
—
2.6
—
S
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss
—
260
—
pF
Output Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss
—
69
—
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss
—
2.5
—
pF
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 µA)
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF372 Narrowband Circuit, 50 ohm system) (2)
Common Source Power Gain
(VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17
—
dB
Drain Efficiency
(VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
33
36
—
%
IMD
—
–35
–31
dBc
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Output Mismatch Stress
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA,
f1 = 857 MHz, f2 = 863 MHz, VSWR = 3:1 at all phase angles
of test)
ψ
No Degradation in Output Power
TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF372 Broadband Circuit, 50 ohm system) (2)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
—
14.5
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
—
37
—
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
—
–31
—
dBc
(1) Each side of device measured separately.
(2) Measured in push–pull configuration.
MRF372
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
!
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&
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Note: Ciss does not include input matching capacitance.
Figure 1. Capacitance versus Voltage
MOTOROLA RF DEVICE DATA
MRF372
3
!
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#
#
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!
(
)
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Figure 2. 860 MHz Narrowband DC Bias Networks
Table 1. 860 MHz Narrowband DC Bias Networks Component Designations and Values
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Designation
MRF372
4
Description
C1
2.2 pF Chip Capacitor, B Case, ATC
C2
0.5 — 5.0 pF Variable Capacitor, B Case, Johansen Gigatrim
C3A, B
22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS
C4A, B, C14A, B
47.0 pF Chip Capacitors, B Case, ATC
C5A, B
100 pF Chip Capacitors, B Case, ATC
C6
10.0 pF Chip Capacitor, B Case, ATC
C7A, B
2.7 pF Chip Capacitors, A Case, ATC
C8A, B
1.0 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y105KXBAT
C9
10.0 pF Chip Capacitor, B Case, ATC
C10A, B
2.2 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y225KXBAT
C11
5.1 pF Chip Capacitor, B Case, ATC
C12A, B
0.01 mF, 100 V Chip Capacitors, Kemet #VJ1210Y103KXBAT
C13
3.9 pF Chip Capacitor, B Case, ATC
C15
1.2 pF Chip Capacitor, B Case, ATC
L1A, B
130 nH, Coilcraft #132–11SM
L2A, B
#24 AWG, 3 Turns Loose, Fair Rite #2643706001
L3A, B
3.85 nH, Coilcraft #0906–4
L4A, B
5.0 nH, Coilcraft #A02T
R1A, B, R2A, B
R4A, B, R5A, B
180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R3A, B
12 Ω, 1/8 W Chip Resistors, Vishay Dale (1206)
PCB
MRF372 Printed Circuit Board Rev 1a, Rogers RO4350,
Height 30 mils, ε& = 3.48
Balun A, B
Vertical 860 MHz Broadband Balun, Printed Circuit Board
Rev 01, Rogers RO3010, Height 50 mils, ε& = 10.2
MOTOROLA RF DEVICE DATA
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(*
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2")!
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Vertical Balun Mounting Detail
,, !
!6 %0. .&%&
2%%&%/ &/ ($ 234 */,
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+* ,-& " ./ 01
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%0. .&%&
&%,7
./ /% ,
%, % */,
Figure 3. 860 MHz Narrowband Component Layout
MOTOROLA RF DEVICE DATA
MRF372
5
TYPICAL TWO–TONE NARROWBAND CHARACTERISTICS
"
!
!
!
h
"
"
#
2
#
22
7*
!
"
hCD
+
@7*
A "! 7
B A 6$ ! F 2%7 $# B2
7* +1E<56 %
+%, + +
@ @ 6
%8
2 .,&7 ,5 / 2&1& 20%76
Figure 4. COFDM Performance (860 MHz)
#
!
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"
h
!
"
#
2
#
(
+
@7*
hCD
+
@7*
"
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22
7*
A "! 7
B A 6$ $ 7* +1E<56 %
B A 6$ 6! $
#
( .
# .
A "! 7
: A () 234
:! A ($" 234
!
+%, + +
@ @ 6
%8
+%, + +
@ @ ++
2 .,&7 ,5 / 2&1& 20%76
Figure 6. Power Gain versus Output Power
#
!
A "! 7
: A () 234
:! A ($" 234
B A # .
!
"
( .
"
6! #
#
#
η CD
22
7*
Figure 5. 8–VSB Performance (860 MHz)
+%, + +
@ @ ++
Figure 7. Intermodulation Distortion versus
Output Power
MRF372
6
"
A "! 7
B A ( .
: A () 234
:! A ($" 234
"
!
!
6$ +%, + +
@ @ ++
Figure 8. Drain Efficiency versus Output Power
MOTOROLA RF DEVICE DATA
G% A Ω
G%,&
: A (# 234
: A () 234
: A (# 234
: A () 234
G/%7
A "! B A ( . +%, A ( @ ++
f
MHz
Zload
Ω
Zsource
Ω
845
3.99 + j2.50
5.63 – j0.38
860
3.56 + j1.98
5.28 – j0.43
875
3.18 + j1.46
4.94 – j0.56
Harmonics
f
GHz
Zsource
Ω
Zload
Ω
1.69
2.85 – j14.30
1.23 – j9.37
1.72
3.27 – j14.32
1.54 – j9.60
1.75
3.35 – j14.36
1.73 – j9.62
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
,
205
=%&1
'
<
7&
Z
source
,,
205
=%&1
'
Z
load
Figure 9. Narrowband Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF372
7
!
$
"
?
?*
'
?
(
'
)
"
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)
(
)
$
#
Figure 10. 470–860 MHz Broadband DC Bias Networks
Table 2. 470–860 MHz Broadband DC Bias Networks Component Designations and Values
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Designation
MRF372
8
Description
C1
0.7 pF Chip Capacitor, B Case, ATC
C2, C13
0.8 — 8.0 pF Variable Capacitors, Johansen Gigatrim
C3A, B, C14A, B, C, D
100 pF Chip Capacitors, B Case, ATC
C4
4.7 pF,Chip Capacitor, B Case, ATC
C5
7.5 pF Chip Capacitor, B Case, ATC
C6
10.0 pF Chip Capacitor, B Case, ATC
C7A, B
6.2 pF Chip Capacitors, A Case, ATC
C8A, B
22 mF, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS
C9A, B
0.1 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y104KXBAT
C10
13 pF Chip Capacitor, B Case, ATC
C11
6.8 pF Chip Capacitor, B Case, ATC
C12
3.9 pF Chip Capacitor, B Case, ATC
C15A, B
3.3 pF Chip Capacitors, B Case, ATC
C16A, B
10 mF, 35 V Tantalum Chip Capacitors, Kemet #T491D106K35AS
C17A, B
3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT
C18A, B
0.01 mF Chip Capacitors, B Case, ATC
L1A, B
12.55 nH, Coilcraft #1606–10
L2A, B
5.45 nH, Coilcraft #0906–5
L3A, B, C
12.5 nH, Coilcraft #A04T
R1A, B
10 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R2A, B
2.2 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210)
R3A, B, R10A, B
390 Ω, 1/8 W Chip Resistors, Vishay Dale (1206)
R4TA, B
520 Ω, Thermistor, Vishay #NTHS—1206J14520R5%
R5A, B
6.2 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
R6A, B
6.8 kΩ, 1/4 W Chip Resistors, Vishay Dale (1210)
R7
100 kΩ Potentiometer, Bourns
R8
47.3 kΩ, 1/8 W Chip Resistor, Vishay Dale (1206)
R9A, B, C, D
180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210)
PCB
MRF372 Printed Circuit Board Rev 1a, Rogers RO4350,
Height 30 mils, ε& = 3.48
Balun A, B
Vertical 660 MHz Broadband Balun, Printed Circuit Board
Rev 01, Rogers RO3010, Height 50 mils, ε& = 10.2
MOTOROLA RF DEVICE DATA
(
$
(
#
!
!
?
"
)
"
#
$
*
"
?*
"*
"*
*
!*
!*
*
?*
$*
(
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!
!
(*
)*
"*
$
)
?
"
#
#*
"
?
#
#
*
(*
)*
) #*
*
$*
2")!
<6
Vertical Balun Mounting Detail
,, !
!6 %0. .&%&
2%%&%/ &/ $$ 234 */,
%5& " ./ 01
,, !6 %0. .&%&
+* ,-& " ./ 01
%8
&. */, +* % 0 " ./ ;-9
: % 0 . +* ;/%9 &,/5
*/, %/7& 7 -5 /</ =0
0 +* ,-& %/7& 7 =0
:,//> &76
,
%0. .&%&
&%,7
./ /% ,
%, % */,
Figure 11. 470–860 MHz Broadband Component Layout
MOTOROLA RF DEVICE DATA
MRF372
9
TYPICAL TWO–TONE BROADBAND CHARACTERISTICS
(
22
7*
+
@7*
!
A "! 7
B A 6 : :! A $ 234
$
A $$ 234
#
#) 234
($ 234
!
!
A "! 7
B A 6 : :! A $ 234
!
"
#
$$ 234
#
($ 234
2 A #) 234
"
+%, + +
@ @ ++
+%, + +
@ @ ++
Figure 12. Power Gain versus Output Power
Figure 13. Intermodulation Distortion versus
Output Power
#
A "! 7
B A 6 : :! A $ 234
h CD
#
"
h A ($ 234
"
!
$$ 234
#) 234
!
+%, + +
@ @ ++
Figure 14. Drain Efficiency versus Output Power
MRF372
10
MOTOROLA RF DEVICE DATA
G% A Ω
G% A Ω
: A #) 234
: A #) 234
G/%7
G%,&
: A ($ 234
: A ($ 234
A "! B A 6 +%, A ( @ ++
f
MHz
Zload
Ω
Zsource
Ω
470
4.46 + j2.57
4.88 + j3.50
560
6.40 – j1.06
5.45 + j0.07
660
7.84 – j0.14
8.13 – j0.73
760
6.67 – j0.46
8.27 + j1.00
860
6.25 – j0.31
7.52 – j0.02
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
,
205
=%&1
'
<
7&
Z
source
,,
205
=%&1
'
Z
load
Figure 15. Broadband Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF372
11
PACKAGE DIMENSIONS
4
G
R
2
*
2
Q
---
2X
L
2
J
2
2
*
2
(LID)
2
1
B
8
6 2
8 36
!6 + 2
+ 2 C#62??#6
"6 2
3 * 2 6" 6)$!
@C 2 +F *
C6
#6 22 *
2
6# !(6?$ * "2 @6
(FLANGE)
5
4X
S
2
4
B
(INSULATOR)
---
3
K
4X
2
*
2
D
---
2
2
2
*
2
2
*
2
F
N
(LID)
E
M
H
C
(INSULATOR)
---
2
A
2
*
2
A
T
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
R
S
bbb
ccc
INCHES
MIN
MAX
6""
6"#
6"(
6"?
6(
6!!#
6"!
6""
6$
6)
6#
6$
6*
6?)
6)
6!!*
6"
6$
6#!*
6(!
6($(
6(
6($?
6(
6"(
6"?
6#
6"?#
6#$
6
6
C 8
+ 6
!6
"6
#6
6
MILLIMETERS
MIN
MAX
""6?
"#6$
?6$
?6?
#6)
6$?
(6!$
(6
6!
6)(
6
6
!)6?#*
!6#$
!6)!
6"?)*
"6#"
#6?
6(*
!6$#
!!6
!6$!
!!6)
"6
"6"
6"
6!?
6
6"
6!
6"(
CASE 375G–04
ISSUE E
NI–860C3
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E Motorola, Inc. 2002.
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MRF372
12
◊
MRF372/D
MOTOROLA RF DEVICE DATA
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.