Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage VCEO 120 150 Vdc Collector – Base Voltage VCBO 130 160 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit 120 150 — — 130 160 — — 5.0 — Vdc — — — — 100 50 100 50 nAdc — 50 OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5400 2N5401 2N5400 2N5401 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO µAdc nAdc 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 2N5400 2N5401 30 50 — — (IC = 10 mAdc, VCE = 5.0 Vdc) 2N5400 2N5401 40 60 180 240 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N5400 2N5401 40 50 — — — — 0.2 0.5 — — 1.0 1.0 100 100 400 300 — 6.0 30 40 200 200 — 8.0 Characteristic Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 2N5400 2N5401 Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) Cobo MHz hfe 2N5400 2N5401 NF pF — dB 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 150 h FE, CURRENT GAIN TJ = 125°C 100 25°C 70 50 – 55°C VCE = – 1.0 V VCE = – 5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 20 10 30 50 100 10 20 50 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region IC, COLLECTOR CURRENT ( µA) 103 102 VCE = 30 V IC = ICES 101 TJ = 125°C 100 75°C 10–1 10–2 REVERSE 25°C 10–3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE–EMITTER VOLTAGE (VOLTS) 0.6 0.7 Figure 3. Collector Cut–Off Region Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 1.0 θV, TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C 0.9 V, VOLTAGE (VOLTS) 0.8 0.7 VBE(sat) @ IC/IB = 10 0.6 0.5 0.4 0.3 0.2 VCE(sat) @ IC/IB = 10 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 2.5 1.5 1.0 0.5 θVC for VCE(sat) 0 –0.5 –1.0 –1.5 θVB for VBE(sat) –2.0 –2.5 0.1 100 TJ = – 55°C to 135°C 2.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 10.2 V 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF 3.0 k RC Vout RB 5.1 k Vin 100 C, CAPACITANCE (pF) 100 70 50 VCC –30 V 100 TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit 1000 700 500 20 Figure 7. Capacitances tr @ VCC = 120 V 1000 700 500 tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 10 2000 IC/IB = 10 TJ = 25°C 300 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 300 IC/IB = 10 TJ = 25°C tf @ VCC = 120 V tf @ VCC = 30 V 200 ts @ VCC = 120 V 100 70 50 30 4 100 Figure 5. Temperature Coefficients VBB + 8.8 V Vin 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn–On Time Figure 9. Turn–Off Time 50 100 200 Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 Motorola reserves the right to make changes without further notice to any products herein. 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