NTMD6P02R2 Preferred Device Power MOSFET 6 Amps, 20 Volts P–Channel SO–8, Dual Features • • • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SO–8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified SO–8 Mounting Information Provided http://onsemi.com 6 AMPERES 20 VOLTS RDS(on) = 33 m Applications • Power Management in Portable and Battery–Powered Products, i.e.: P–Channel Cellular and Cordless Telephones and PCMCIA Cards D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDSS –20 V Gate–to–Source Voltage – Continuous VGS 12 V Thermal Resistance – Junction–to–Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4.) RθJA PD ID ID PD ID IDM 62.5 2.0 –7.8 –5.7 0.5 –3.89 –40 °C/W W A A W A A Drain–to–Source Voltage Thermal Resistance – Junction–to–Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4.) RθJA PD ID ID PD ID IDM 98 1.28 –6.2 –4.6 0.3 –3.01 –35 °C/W W A A W A A Thermal Resistance – Junction–to–Ambient (Note 3.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4.) RθJA PD ID ID PD ID IDM 166 0.75 –4.8 –3.5 0.2 –2.48 –30 °C/W W A A W A A 1. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz. Cu 0.06″ thick single sided), t = 10 seconds. 2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz. Cu 0.06″ thick single sided), t = steady state. 3. Minimum FR–4 or G–10 PCB, t = steady state. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. G S MARKING DIAGRAM SO–8, Dual CASE 751 STYLE 11 8 E6P02 LYWW 1 L Y WW = Location Code = Year = Work Week PIN ASSIGNMENT Source–1 1 8 Drain–1 Gate–1 2 7 Drain–1 Source–2 3 6 Drain–2 Gate–2 4 5 Drain–2 Top View ORDERING INFORMATION Device NTMD6P02R2 Package SO–8 Shipping 2500 Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 1 1 Publication Order Number: NTMD6P02R2/D NTMD6P02R2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (continued) Rating Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = –20 Vdc, VGS = –5.0 Vdc, Peak IL = –5.0 Apk, L = 40 mH, RG = 25 Ω) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol Value Unit TJ, Tstg –55 to +150 °C EAS 500 mJ TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) * Characteristic Symbol Min Typ Max Unit –20 – – –11.6 – – – – – – –1.0 –5.0 – – –100 – – 100 –0.6 – –0.88 2.6 –1.20 – – – – 0.027 0.038 0.038 0.033 0.050 – gFS – 15 – Mhos pF OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = –250 µAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = –20 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = –20 Vdc, VGS = 0 Vdc, TJ = 70°C) IDSS Gate–Body Leakage Current (VGS = –12 Vdc, VDS = 0 Vdc) IGSS Gate–Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = –250 µAdc) Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–State Resistance (VGS = –4.5 Vdc, ID = –6.2 Adc) (VGS = –2.5 Vdc, ID = –5.0 Adc) (VGS = –2.5 Vdc, ID = –3.1 Adc) RDS(on) Forward Transconductance (VDS = –10 Vdc, ID = –6.2 Adc) Vdc mV/°C Ω DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance 16 Vd (VDS = –16 Vdc, VGS = 0 Vd Vdc, f = 1.0 MHz) Reverse Transfer Capacitance Ciss – 1380 1700 Coss – 515 775 Crss – 250 450 td(on) – 15 25 tr – 20 50 td(off) – 85 125 tf – 50 110 td(on) – 17 – tr – 65 – td(off) – 50 – SWITCHING CHARACTERISTICS (Notes 5. and 6.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = –10 Vdc, ID = –1.0 Adc, Vdc VGS = –10 Vdc, RG = 6.0 Ω) Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = –16 Vdc, ID = –6.2 Adc, VGS = –4.5 4 5 Vdc, Vdc RG = 6.0 Ω) Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge (VDS = –16 Vdc, VGS = –4.5 Vdc, ID = –6.2 6 2 Adc) Ad ) 5. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%. 6. Switching characteristics are independent of operating junction temperature. * Handling precautions to protect against electrostatic discharge is mandatory. http://onsemi.com 2 tf – 80 – Qtot – 20 35 Qgs – 4.0 – Qgd – 8.0 – ns ns nC NTMD6P02R2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) * Characteristic Symbol Min Typ Max Unit BODY–DRAIN DIODE RATINGS (Note 5.) Diode Forward On–Voltage (IS = –1.7 Adc, VGS = 0 Vdc) (IS = –1.7 Adc, VGS = 0 Vdc, TJ = 125°C) VSD – – –0.80 –0.65 –1.2 – Vdc Diode Forward On–Voltage (IS = –6.2 Adc, VGS = 0 Vdc) (IS = –6.2 Adc, VGS = 0 Vdc, TJ = 125°C) VSD – – –0.95 –0.80 – – Vdc trr – 50 80 ns ta – 20 – tr – 30 – QRR – 0.04 – Reverse Recovery Time (IS = –1.7 1 7 Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/µs) Reverse Recovery Stored Charge µC 5. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%. * Handling precautions to protect against electrostatic discharge is mandatory. –10 V 10 –4.5 V –3.8 V 10 –2.1 V –ID, DRAIN CURRENT (AMPS) –ID, DRAIN CURRENT (AMPS) 12 TJ = 25°C 8.0 –3.1 V –2.5 V 6.0 –1.8 V 4.0 2.0 0 –1.5 V VGS = –1.3 V 0 VDS ≥ –10 V 8.0 6.0 25°C 4.0 100°C 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ = –55°C 2.0 0 1.0 1.5 2.0 2.5 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.05 ID = –6.2 A TJ = 25°C 0.04 0.03 0.02 0.01 0 0 2.0 4.0 6.0 8.0 –VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 10 RDS(on), DRAIN–TO–SOURCE RESISTANCE () RDS(on), DRAIN–TO–SOURCE RESISTANCE () Figure 1. On–Region Characteristics 0.05 TJ = 25°C VGS = –2.5 V 0.04 –2.7 V 0.03 –4.5 V 0.02 0.01 0 Figure 3. On–Resistance versus Gate–To–Source Voltage 2.0 8.0 10 4.0 6.0 –ID, DRAIN CURRENT (AMPS) 12 14 Figure 4. On-Resistance versus Drain Current and Gate Voltage http://onsemi.com 3 1.6 1000 ID = –6.2 A VGS = –4.5 V 1.2 1 0.8 0.6 –50 –25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 100°C 10 1 25°C 0.1 4 5000 VDS = 0 V C, CAPACITANCE (pF) 4000 VGS = 0 V TJ = 25°C Ciss 3500 3000 2500 Crss 2000 Ciss 1500 1000 Coss Crss 500 0 10 5.0 0 5.0 10 15 20 –VGS –VDS 5 20 QT 16 4 VDS 3 Q1 VGS 12 Q2 8 2 ID = –6.2 A VDS = –16 V VGS = –4.5 V TJ = 25°C 1 4 0 0 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 5.0 0 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total Charge 1000 VDD = –16 V ID = –1.0 A VGS = –10 V VDD = –16 V ID = –6.2 A VGS = –4.5 V td(off) tf t, TIME (ns) t, TIME (ns) 8 12 16 20 –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage Current versus Voltage VGS , GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature 4500 TJ = 125°C 100 0.01 150 VGS = 0 V V DS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 1.4 –I DSS , LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) NTMD6P02R2 100 tr 100 tf tr td(off) td(on) td(on) 10 10 1 10 100 1 10 100 RG, GATE RESISTANCE (OHMS) RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Resistive Switching Time Variation versus Gate Resistance http://onsemi.com 4 NTMD6P02R2 DRAIN–TO–SOURCE DIODE CHARACTERISTICS 100 VGS = 0 V TJ = 25°C 4 –ID , DRAIN CURRENT (AMPS) –IS, SOURCE CURRENT (AMPS) 5 3 2 1 0 0.2 0.4 0.6 0.8 10 ms 1 1.2 1.0 1.0 ms 10 0.1 0 VGS = 2.5 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT –VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) dc 1 0.1 10 100 –VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage versus Current Figure 12. Maximum Rated Forward Biased Safe Operating Area di/dt IS trr tb ta TIME 0.25 IS tp IS Figure 13. Diode Reverse Recovery Waveform TYPICAL ELECTRICAL CHARACTERISTICS Rthja(t) , EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 0.1 D = 0.5 0.2 0.1 0.05 Normalized to θja at 10s. Chip 0.02 0.01 0.0175 Ω 0.0710 Ω 0.2706 Ω 0.0154 F 0.0854 F 0.3074 F 0.5776 Ω 0.7086 Ω 0.01 SINGLE PULSE 1.7891 F 107.55 F Ambient 0.001 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 t, TIME (s) Figure 14. Thermal Response http://onsemi.com 5 1.0E+01 1.0E+02 1.0E+03 NTMD6P02R2 INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm SOLDERING PRECAUTIONS • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 6 NTMD6P02R2 TYPICAL SOLDER HEATING PROFILE temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 15 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 4 HEATING ZONES 3 & 6 “SOAK” 160°C STEP 5 STEP 6 STEP 7 HEATING VENT COOLING ZONES 4 & 7 205° TO 219°C “SPIKE” PEAK AT 170°C SOLDER JOINT 150°C 150°C 100°C 140°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 5°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 15. Typical Solder Heating Profile http://onsemi.com 7 NTMD6P02R2 PACKAGE DIMENSIONS SO–8 CASE 751–07 ISSUE V –X– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. A 8 5 0.25 (0.010) S B 1 M Y M 4 K –Y– G C N X 45 SEATING PLANE –Z– 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S XXXXXX ALYW DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 STYLE 11: PIN 1. 2. 3. 4. 5. 6. 7. 8. INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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