NCR169D Advance Information General Purpose Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor http://onsemi.com PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a cost effective plastic TO-226AA package. • Sensitive Gate Allows Direct Triggering by Microcontrollers and Other Logic Circuits • On–State Current Rating of 0.8 Amperes RMS at 80°C • Surge Current Capability – 10 Amperes • Immunity to dV/dt – 20 V/µsec Minimum at 110°C • Glass-Passivated Surface for Reliability and Uniformity • Device Marking: NCR169D, Date Code SCR 0.8 AMPERES RMS 400 VOLTS G A K MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage (Note 1.) (TJ = 40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) VDRM, VRRM 400 Volts On-State RMS Current (TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 Amp ITSM 10 Amps Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) Circuit Fusing Consideration (t = 10 ms) Forward Peak Gate Power (TA = 25°C, Pulse Width 1.0 µs) Forward Average Gate Power (TA = 25°C, t = 20 ms) NCR 169D YWW TO–92 (TO–226AA) CASE 029 STYLE 10 K G A Y = Year WW = Work Week I2t 0.415 A2s PGM 0.1 Watt 1 2 3 PIN ASSIGNMENT PG(AV) 0.10 Watt Forward Peak Gate Current (TA = 25°C, Pulse Width 1.0 µs) IGM 1.0 Amp Reverse Peak Gate Voltage (TA = 25°C, Pulse Width 1.0 µs) VGRM 5.0 Volts Operating Junction Temperature Range @ Rate VRRM and VDRM TJ –40 to 110 °C Storage Temperature Range Tstg –40 to 150 °C 1 Cathode 2 Gate 3 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2000 December, 2000 – Rev. 0 1 Publication Order Number: NCR169D/D NCR169D THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC RθJA 75 200 °C/W TL 260 °C Thermal Resistance – Junction to Case – Junction to Ambient Lead Solder Temperature (1/16″ from case, 10 secs max) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit – – – – 10 0.1 µA mA VTM – – 1.7 Volts OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 1.) (VD = Rated VDRM and VRRM; RGK = 1.0 kΩ) IDRM, IRRM TC = 25°C TC = 110°C ON CHARACTERISTICS Peak Forward On–State Voltage(*) (ITM = 1.0 Amp Peak @ TA = 25°C) Gate Trigger Current (Continuous dc) (Note 2.) (VAK = 12 V, RL = 100 Ohms) TC = 25°C IGT – 40 200 µA Holding Current (Note 2.) (VAK = 12 V, IGT = 0.5 mA) TC = 25°C TC = –40°C IH – – 0.5 – 5.0 10 mA Latch Current (VAK = 12 V, IGT = 0.5 mA, RGK = 1.0 k) TC = 25°C TC = –40°C IL – – 0.6 – 10 15 mA Gate Trigger Voltage (Continuous dc) (Note 2.) (VAK = 12 V, RL = 100 Ohms, IGT = 10 mA) TC = 25°C TC = –40°C VGT – – 0.62 – 0.8 1.2 Volts Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms, TJ = 110°C) dV/dt 20 35 – V/µs Critical Rate of Rise of On–State Current (IPK = 20 A; Pw = 10 µsec; diG/dt = 1.0 A/µsec, Igt = 20 mA) di/dt – – 50 A/µs DYNAMIC CHARACTERISTICS *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 1. RGK = 1000 Ohms included in measurement. 2. Does not include RGK in measurement. http://onsemi.com 2 NCR169D Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) 100 1.0 90 0.9 GATE TRIGGER VOLTAGE (VOLTS) GATE TRIGGER CURRENT ( A) Anode – 80 70 60 50 40 30 20 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 0.8 0.7 0.6 0.5 0.4 0.3 0.2 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 Figure 1. Typical Gate Trigger Current versus Junction Temperature 95 110 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature http://onsemi.com 3 NCR169D 1000 LATCHING CURRENT ( A) HOLDING CURRENT ( A) 1000 100 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 100 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 120 110 100 90 DC 80 70 180° 60 50 40 30° 0 60° 90° 120° 0.1 0.2 0.3 0.4 IT(RMS), RMS ON-STATE CURRENT (AMPS) 110 Figure 4. Typical Latching Current versus Junction Temperature 0.5 I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) Figure 3. Typical Holding Current versus Junction Temperature 95 10 MAXIMUM @ TJ = 25°C MAXIMUM @ TJ = 110°C 1 0.1 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Typical RMS Current Derating Figure 6. Typical On–State Characteristics http://onsemi.com 4 NCR169D TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL H2A H2A H2B H2B H W2 H4 H5 T1 L1 H1 W1 W L F1 T2 F2 P2 D P2 P1 T P Figure 7. Device Positioning on Tape Specification Inches Min Max Min Tape Feedhole Diameter 0.1496 0.1653 3.8 4.2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51 Component Lead Pitch 0.0945 0.110 2.4 2.8 .059 .156 1.5 4.0 0.3346 0.3741 8.5 9.5 0 0.039 0 1.0 Symbol D D2 F1, F2 Millimeter Item H Bottom of Component to Seating Plane H1 Feedhole Location H2A Deflection Left or Right H2B Deflection Front or Rear H4 Feedhole to Bottom of Component H5 Max 0 0.051 0 1.0 0.7086 0.768 18 19.5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5 L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11 L1 Lead Wire Enclosure 0.09842 – 2.5 – P Feedhole Pitch 0.4921 0.5079 12.5 12.9 P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75 P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95 0.06 0.08 0.15 0.20 – 0.0567 – 1.44 T Adhesive Tape Thickness T1 Overall Taped Package Thickness T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65 W Carrier Strip Width 0.6889 0.7481 17.5 19 W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3 W2 Adhesive Tape Position .0059 0.01968 .15 0.5 NOTES: 1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. http://onsemi.com 5 NCR169D ORDERING & SHIPPING INFORMATION: MCR100 Series packaging options, Device Suffix Device NCR169D NCR169DRLRA NCR169DRLRM Shipping Description of TO92 Tape Orientation Bulk in Box (5K/Box) Radial Tape and Reel (2K/Reel) Radial Tape and Fan Fold Box (2K/Box) http://onsemi.com 6 N/A, Bulk Round side of TO92 and adhesive tape visible Flat side of TO92 and adhesive tape visible NCR169D PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 029–11 ISSUE AJ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- NCR169D ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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