DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4020PD PNP transistor/Schottky-diode module Product specification 2003 Nov 24 Philips Semiconductors Product specification PNP transistor/Schottky-diode module PMEM4020PD PINNING FEATURES • 600 mW total power dissipation PIN DESCRIPTION • High current capability 1 emitter • Reduces required PCB area 2 not connected • Reduced pick and place costs 3 cathode • Small plastic SMD package. 4 anode 5 base 6 collector Transistor • Low collector-emitter saturation voltage. Diode • Ultra high-speed switching handbook, halfpage 6 5 4 • Very low forward voltage 4 • Guard ring protected. 3 6 5 1 APPLICATIONS 1 • DC-to-DC converters 2 3 MGU868 • Inductive load drivers • General purpose load drivers Marking code: B7. • Reverse polarity protection circuits. Fig.1 Simplified outline (SOT457) and symbol. DESCRIPTION Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4020ND. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020PD 2003 Nov 24 − DESCRIPTION plastic surface mounted package; 6 leads 2 VERSION SOT457 Philips Semiconductors Product specification PNP transistor/Schottky-diode module PMEM4020PD LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PNP transistor VCBO collector-base voltage open emitter − −40 VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) note 1 − −0.75 A note 2 − −1 A note 3 − −1.3 A Ts ≤ 55 °C; note 4 − −2 A V ICM peak collector current − −3 A IBM peak base current − −1 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 295 mW Tamb ≤ 25 °C; note 2 − 400 mW Tamb ≤ 25 °C; note 3 − 500 mW Ts ≤ 55 °C; note 4 − 1000 mW − 150 °C − 20 V Tj junction temperature Schottky barrier diode VR continuous reverse voltage IF continuous forward current − 1 A IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method − 5 A Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 295 mW Tamb ≤ 25 °C; note 2 − 400 mW Tamb ≤ 25 °C; note 3 − 500 mW Ts ≤ 55 °C; note 4 − 1000 mW note 2 − 150 °C Tamb = 25 °C; note 2 − 600 mW −65 +150 °C −65 +150 °C Tj junction temperature Combined device Ptot total power dissipation Tstg storage temperature Tamb operating ambient temperature note 2 Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and cathode both 1 cm2. 3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Solder point of collector or cathode tab. 2003 Nov 24 3 Philips Semiconductors Product specification PNP transistor/Schottky-diode module PMEM4020PD THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Single device Rth(j-s) thermal resistance from junction to solder point in free air; notes 1 and 2 95 K/W Rth(j-a) thermal resistance from junction to ambient in free air; notes 1 and 3 250 K/W in free air; notes 1 and 4 315 K/W in free air; notes 1 and 5 425 K/W in free air; notes 1 and 3 208 K/W Combined device Rth(j-a) thermal resistance from junction to ambient Notes 1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF (AV) rating will be available on request. 2. Solder point of collector or cathode tab. 3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector and cathode both 1 cm2. 5. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; standard footprint for SOT457. 2003 Nov 24 4 Philips Semiconductors Product specification PNP transistor/Schottky-diode module PMEM4020PD ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT PNP transistor − − −100 nA VCB = −40 V; IE = 0; Tamb = 150 °C − − −50 µA VCE = −30 V; IB = 0 − − −100 nA emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA current gain (DC) VCE = −5 V; IC = −1 mA 300 − − ICBO collector-base cut-off current ICEO collector-emitter cut-off current IEBO hFE VCB = −40 V; IE = 0 VCE = −5 V; IC = −100 mA 300 − 800 VCE = −5 V; IC = −500 mA 250 − − VCE = −5 V; IC = −1 A 160 − − VCE = −5 V; IC = −2 A; note 1 VCEsat 50 − − − − −120 mV IC = −500 mA; IB = −50 mA − − −145 mV collector-emitter saturation voltage IC = −100 mA; IB = −1 mA IC = −1 A; IB = −100 mA − − −260 mV IC = −2 A; IB = −200 mA − − −530 mV IC = −1 A; IB = −50 mA − − −1.1 V VBEsat base-emitter saturation voltage RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA; note 1 − 180 280 mΩ VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1 V fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 − − MHz IF = 10 mA − 240 270 mV IF = 100 mA − 300 350 mV IF = 1000 mA − 480 550 mV VR = 5 V − 5 10 µA VR = 8 V − 7 20 µA VR = 15 V − 10 50 µA − 19 25 pF Schottky barrier diode VF IR Cd continuous forward voltage reverse current diode capacitance see Fig.2; note 1 see Fig.3; note 1 VR = 5 V; f = 1 MHz; see Fig.4 Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Nov 24 5 Philips Semiconductors Product specification PNP transistor/Schottky-diode module PMEM4020PD GRAPHICAL DATA MLE230 103 handbook, halfpage MHC312 105 handbook, halfpage IR (µA) IF (mA) (1) 104 102 (2) 103 (1) (2) 102 (3) 10 (3) 10 1 0 100 200 300 1 400 500 VF (mV) 0 5 15 20 25 VR (V) Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MHC313 80 10 Reverse current as a function of reverse voltage; typical values. MHC088 1200 handbook, halfpage handbook, halfpage hFE Cd (pF) 1000 (1) 60 800 40 600 (2) 400 (3) 20 200 0 −10−1 0 0 5 10 15 VR (V) 20 −1 −10 Schottky barrier diode; f = 1 MHz; Tamb = 25 °C. PNP transistor; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Diode capacitance as a function of reverse voltage; typical values. 2003 Nov 24 6 −102 −103 −104 IC (mA) DC current gain as a function of collector current; typical values. Philips Semiconductors Product specification PNP transistor/Schottky-diode module MHC089 −10 PMEM4020PD MHC090 −103 handbook, halfpage handbook, halfpage VCEsat (mV) VBE (V) −102 −1 (1) (1) (2) −10 (2) (3) (3) −10−1 −10−1 −1 −10 −102 −1 −1 −103 −104 IC (mA) −102 −10 PNP transistor; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. PNP transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Base-emitter voltage as a function of collector current; typical values. MHC091 102 handbook, halfpage RCEsat (Ω) 300 fT (MHz) 250 10 200 −103 IC (mA) −104 Collector-emitter saturation voltage as a function of collector current; typical values. MHC092 handbook, halfpage 150 1 100 (1) 50 (2) (3) 10−1 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 −200 −400 −600 −800 −1000 IC (mA) PNP transistor; VCE = −10 V. PNP transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Equivalent on-resistance as a function of collector current; typical values. 2003 Nov 24 Fig.9 7 Transition frequency as a function of collector current. Philips Semiconductors Product specification PNP transistor/Schottky-diode module PMEM4020PD APPLICATION INFORMATION handbook, halfpage handbook, halfpage Vin VCC Vout IN CONTROLLER MGU866 MGU867 Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode. Fig.10 DC-to-DC converter. 2003 Nov 24 8 Philips Semiconductors Product specification PNP transistor/Schottky-diode module PMEM4020PD PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2003 Nov 24 REFERENCES IEC JEDEC EIAJ SC-74 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 Philips Semiconductors Product specification PNP transistor/Schottky-diode module PMEM4020PD DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Nov 24 10 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp11 Date of release: 2003 Nov 24 Document order number: 9397 750 11907