19MT050XFAPbF Vishay Semiconductors "Full Bridge" FREDFET MTP (Power MOSFET), 31 A FEATURES • Low on-resistance • High performance recovery diodes optimized built-in fast • Fully characterized capacitance and avalanche voltage and current • Al2O3 DBC • Very low stray inductance design for high speed operation • UL approved file E78996 MTP • Compliant to RoHS directive 2002/95/EC BENEFITS • Low gate charge Qg results in simple drive requirement PRODUCT SUMMARY • Improved gate, avalanche and dynamic dV/dt ruggedness VDSS 500 V RDS(on) 0.25 Ω ID 31 A Type Modules - MOSFET Package MTP • Low trr and soft diode reverse recovery • Optimized for welding, UPS and SMPS applications • Outstanding ZVS and high frequency operation • Direct mounting to heatsink • PCB solderable terminals • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Continuous drain current at VGS 10 V Pulsed drain current ID IDM Maximum power dissipation TEST CONDITIONS TC = 25 °C 31 TC = 100 °C 19 TC = 25 °C 1140 TC = 100 °C 456 (1) PD Gate to source voltage VGS RMS isolation voltage VISOL MAX. UNITS A 124 W ± 30 V Any terminal to case, t = 1 min 2500 dV/dt (2) 15 V/ns Operating junction temperature range TJ - 55 to + 150 °C Operating storage temperature range TStg - 55 to + 125 °C Peak diode recovery dV/dt Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (2) I SD ≤ 31 A, dI/dt ≤ 340 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C Document Number: 94546 Revision: 12-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 19MT050XFAPbF Vishay Semiconductors "Full Bridge" FREDFET MTP (Power MOSFET), 31 A ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Drain to source breakdown voltage Temperature coefficient of breakdown voltage Static drain to source on-resistance V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) (1) Gate threshold voltage VGS(th) Drain to source leakage current IDSS (2) Gate to source forward leakage Gate to source reverse leakage IGSS TEST CONDITIONS MIN. TYP. MAX. UNITS 500 - - V ID = 4 mA, reference to TJ = 25 °C - 0.48 - V/°C VGS = 10 V, ID = 19 A - 0.19 0.22 VGS = 10 V, ID = 31 A - 0.21 0.25 VDS = VGS, ID = 250 μA 3.0 - 6.0 VDS = 500 V, VGS = 0 V - - 50 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 2 mA VGS = 30 V - - 150 VGS = - 30 V - - - 150 MIN. TYP. MAX. UNITS VDS = 50 V, ID = 19 A - 26 - S ID = 31 A VDS = 400 V VGS = 10 V - 105 160 - 36 55 - 46 70 - 49 74 - 80 120 - 165 250 VGS = 0 V, ID = 250 μA Ω V nA Notes (1) Pulse width ≤ 400 μs, duty cycle ≤ 2 % (2) I CES includes also opposite leg overall leakage DYNAMIC CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Forward transconductance gfs (1) Total gate charge Qg Gate to source charge Qgs (1) Gate to drain ("Miller") charge Qgd (1) Turn-on delay time td(on) Turn-off delay time td(off) Rise time tr Fall time tf Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss TEST CONDITIONS ID = 31 A VDS = 250 V VGS = 10 V Rg = 4.3 Ω nC ns - 76 115 - 4808 7210 - 1165 1750 - 40 60 MIN. TYP. MAX. - - 31 - - 124 TJ = 25 °C, IS = 31 A, VGS = 0 V - 1.01 1.1 V TJ = 125 °C, IF = 31 A; dI/dt = 100 A/μs (2) - 252 378 ns - 1619 2428 nC VGS = 0 V VDS = 25 V f = 1.0 MHz pF Note Pulse width ≤ 400 μs, duty cycle ≤ 2 % (1) DIODE CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Continuous source current (body diode) IS Pulsed source current (body diode) ISM (1) (2) Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr TEST CONDITIONS MOSFET symbol showing the integral reverse p-n junction diode D UNITS A G S Notes Repetitive rating; pulse width limited by maximum junction temperature (2) Pulse width ≤ 400 μs, duty cycle ≤ 2 % (1) www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94546 Revision: 12-May-10 19MT050XFAPbF "Full Bridge" FREDFET MTP (Power MOSFET), 31 A Vishay Semiconductors AVALANCHE CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNITS EAS (1) - - 493 mJ Avalanche current IAR (2) - - 31 A Repetitive avalanche energy EAR (2) - - 114 mJ Single pulse avalanche energy Notes (1) Starting T = 25 °C, L = 1.0 mH, R = 25 Ω, I J g AS = 31 A (2) Repetitive rating; pulse width limited by maximum junction temperature THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ - 40 - 150 Storage temperature range TStg - 40 - 125 Junction to case per MOSFET RthJC - - 0.44 - 0.06 - Operating junction temperature range Case to sink RthCS TEST CONDITIONS UNITS °C Heatsink compound thermal conductivity = 1 W/mK °C/W Clearance (1) External shortest distance in air between 2 terminals 5.5 - - Creepage (1) Shortest distance along external surface of the insulating material between 2 terminals 8 - - - 66 - Weight mm g Note Standard version only i.e. without optional thermistor (1) Document Number: 94546 Revision: 12-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 19MT050XFAPbF "Full Bridge" FREDFET MTP (Power MOSFET), 31 A Vishay Semiconductors 2.5 ID, Drain-to-Source Current (A) 100 10 1 5.0V 0.1 20µs PULSE WIDTH Tj = 25°C ID = 31A VGS = 10V 2.0 (Normalized) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP R DS(on) , Drain-to-Source On Resistance 1000 1.0 0.01 0.5 0.1 100 1.5 1 10 100 -60 -40 -20 60 80 100 120 140 160 Fig. 4 - Normalized On-Resistance vs. Temperature 100000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 5.0V 1 Ciss 1000 Coss 100 20µs PULSE WIDTH Tj = 150°C Crss 0.1 10 0.1 1 10 100 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain to Source Voltage 16 VGS , Gate-to-Source Voltage (V) 1000 ID, Drain-to-Source Current ( A) 40 Fig. 1 - Typical Output Characteristics C, Capacitance (pF) ID, Drain-to-Source Current (A) 20 T J , Junction Temperature (°C) TOP 10 0 VDS, Drain-to-Source Voltage (V) 100 T J = 150°C 10 1 T J = 25°C VDS = 50V 20µs PULSE WIDTH 0 4.0 5.0 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics www.vishay.com 4 ID= 31A VDS= 400V VDS= 250V VDS= 100V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 40 80 120 160 Q G Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94546 Revision: 12-May-10 19MT050XFAPbF "Full Bridge" FREDFET MTP (Power MOSFET), 31 A 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 Vishay Semiconductors 100.0 T J = 150°C 10.0 1.0 T J = 25°C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 1msec 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 100µsec 10 0.1 1.4 Tc = 25°C Tj = 150°C Single Pulse 1 10msec 10 VSD, Source-toDrain Voltage (V) 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 32 28 24 20 16 12 8 4 0 25 50 75 100 125 150 Fig. 9 - Maximum Drain Current vs. Case Temperature RD VDS VDS 90 % VGS D.U.T. Rg + - VDD 10 % 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Document Number: 94546 Revision: 12-May-10 VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 19MT050XFAPbF "Full Bridge" FREDFET MTP (Power MOSFET), 31 A Vishay Semiconductors 1 0.20 0.10 0.05 p ( thJC D = 0.50 0.1 0.02 0.01 0.01 τJ R1 R1 τJ τ1 R2 R2 τ2 τ1 R3 R3 τ3 τ2 τ τC τ τ3 Ci= τi/Ri Ci i/Ri 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case EAS, Single Pulse Avalanche Energy (mJ) 1000 ID 14A 19A BOTTOM 31A TOP 800 600 400 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig. 12a - Maximum Avalanche Energy vs. Drain Current 15 V tp L VDS D.U.T Rg IAS 20 V tp Driver + - VDD 0.01 Ω Fig. 12b - Unclamped Inductive Test Circuit www.vishay.com 6 V(BR)DSS A IAS Fig. 12c - Unclamped Inductive Waveforms For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94546 Revision: 12-May-10 19MT050XFAPbF "Full Bridge" FREDFET MTP (Power MOSFET), 31 A Vishay Semiconductors Current regulator Same type as D.U.T. 50 kΩ 12 V 0.2 μF QG 0.3 μF VGS + - VDS D.U.T. QGS VGS QGD VG 3 mA IG ID Charge Current sampling resistors Fig. 13a - Gate Charge Test Circuit Fig. 13b - Basic Gate Charge Waveform + D.U.T. 3 - Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + 2 - - 4 + 1 Rg • dV/dt controlled by Rg • Driver same type as D.U.T. • ISD controlled by duty factor “D” • D.U.T. - Device Under Test + - VDD Fig. 14 - Peak Diode Recovery dV/dt Test Circuit 1 Driver gate drive Period P.W. D= P.W. Period VGS = 10 V (1) 2 D.U.T. ISD waveform Reverse Body diode forward recovery current current dI/dt 3 D.U.T. VDS waveform Diode recovery dV/dt VDD Reapplied voltage 4 Body diode forward drop Inductor current Ripple ≤ 5 % (1) ISD VGS = 5 V for logic level devices Fig. 15 - For N-Channel Power MOSFETs Document Number: 94546 Revision: 12-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 19MT050XFAPbF "Full Bridge" FREDFET MTP (Power MOSFET), 31 A Vishay Semiconductors 9, 10 4 3 5 6 15, 16 13, 14 2 1 7 8 11, 12 Fig. 16 - Electrical diagram ORDERING INFORMATION TABLE Device code 19 MT 050 X F A PbF 1 2 3 4 5 6 7 1 - Current rating 2 - Essential part number 3 - Voltage code (050 = 500 V) 4 - Speed/type (X = Power MOSFET) 5 - Circuit configuration (F = Full bridge - see Circuit Configuration table) 6 - A = Al2O3 DBC substrate 7 - PbF = Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE Full bridge F CIRCUIT DRAWING LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 www.vishay.com/doc?95245 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94546 Revision: 12-May-10 Outline Dimensions Vishay Semiconductors MTP MOSFET/IGBT Full-Bridge DIMENSIONS in millimeters Ø5 Ø 1.1 4 20.5 12 ± 0.5 2.5 31.8 33 3 2 13 4 14 9 10 1 11 15 5 12 8 16 7 6 0.3 ± 0.1 7 6.6 ± 0.1 8 ± 0.1 45° 11.4 ± 0.1 11.3 ± 0.1 27.5 3 ± 0.1 5.3 ± 0.1 3 ± 0.1 7.4 ± 0.1 5.3 ± 0.1 Ø 5.2 x 3 8 ± 0.1 7 ± 0.1 R5.75 (x 2) 7.4 ± 0.1 4.9 ± 0.1 6.6 ± 0.1 39.5 44.5 48.7 0.6 x h1.2 1.3 63.5 ± 0.25 Document Number: 95245 Revision: 24-Sep-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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