VISHAY 19MT050XFAPBF

19MT050XFAPbF
Vishay Semiconductors
"Full Bridge" FREDFET MTP (Power MOSFET), 31 A
FEATURES
• Low on-resistance
• High performance
recovery diodes
optimized
built-in
fast
• Fully characterized capacitance and avalanche voltage
and current
• Al2O3 DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
MTP
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Low gate charge Qg results in simple drive requirement
PRODUCT SUMMARY
• Improved gate, avalanche and dynamic dV/dt ruggedness
VDSS
500 V
RDS(on)
0.25 Ω
ID
31 A
Type
Modules - MOSFET
Package
MTP
• Low trr and soft diode reverse recovery
• Optimized for welding, UPS and SMPS applications
• Outstanding ZVS and high frequency operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Continuous drain current at VGS 10 V
Pulsed drain current
ID
IDM
Maximum power dissipation
TEST CONDITIONS
TC = 25 °C
31
TC = 100 °C
19
TC = 25 °C
1140
TC = 100 °C
456
(1)
PD
Gate to source voltage
VGS
RMS isolation voltage
VISOL
MAX.
UNITS
A
124
W
± 30
V
Any terminal to case, t = 1 min
2500
dV/dt (2)
15
V/ns
Operating junction temperature range
TJ
- 55 to + 150
°C
Operating storage temperature range
TStg
- 55 to + 125
°C
Peak diode recovery dV/dt
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature
(2) I
SD ≤ 31 A, dI/dt ≤ 340 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C
Document Number: 94546
Revision: 12-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
19MT050XFAPbF
Vishay Semiconductors
"Full Bridge" FREDFET MTP
(Power MOSFET), 31 A
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Drain to source breakdown voltage
Temperature coefficient of breakdown voltage
Static drain to source on-resistance
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on) (1)
Gate threshold voltage
VGS(th)
Drain to source leakage current
IDSS (2)
Gate to source forward leakage
Gate to source reverse leakage
IGSS
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
500
-
-
V
ID = 4 mA, reference to TJ = 25 °C
-
0.48
-
V/°C
VGS = 10 V, ID = 19 A
-
0.19
0.22
VGS = 10 V, ID = 31 A
-
0.21
0.25
VDS = VGS, ID = 250 μA
3.0
-
6.0
VDS = 500 V, VGS = 0 V
-
-
50
μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
2
mA
VGS = 30 V
-
-
150
VGS = - 30 V
-
-
- 150
MIN.
TYP.
MAX.
UNITS
VDS = 50 V, ID = 19 A
-
26
-
S
ID = 31 A
VDS = 400 V
VGS = 10 V
-
105
160
-
36
55
-
46
70
-
49
74
-
80
120
-
165
250
VGS = 0 V, ID = 250 μA
Ω
V
nA
Notes
(1) Pulse width ≤ 400 μs, duty cycle ≤ 2 %
(2) I
CES includes also opposite leg overall leakage
DYNAMIC CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Forward transconductance
gfs
(1)
Total gate charge
Qg
Gate to source charge
Qgs (1)
Gate to drain ("Miller") charge
Qgd
(1)
Turn-on delay time
td(on)
Turn-off delay time
td(off)
Rise time
tr
Fall time
tf
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
TEST CONDITIONS
ID = 31 A
VDS = 250 V
VGS = 10 V
Rg = 4.3 Ω
nC
ns
-
76
115
-
4808
7210
-
1165
1750
-
40
60
MIN.
TYP.
MAX.
-
-
31
-
-
124
TJ = 25 °C, IS = 31 A, VGS = 0 V
-
1.01
1.1
V
TJ = 125 °C, IF = 31 A;
dI/dt = 100 A/μs (2)
-
252
378
ns
-
1619
2428
nC
VGS = 0 V
VDS = 25 V
f = 1.0 MHz
pF
Note
Pulse width ≤ 400 μs, duty cycle ≤ 2 %
(1)
DIODE CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Continuous source current
(body diode)
IS
Pulsed source current (body diode)
ISM (1)
(2)
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
TEST CONDITIONS
MOSFET symbol
showing the
integral reverse
p-n junction diode
D
UNITS
A
G
S
Notes
Repetitive rating; pulse width limited by maximum junction temperature
(2) Pulse width ≤ 400 μs, duty cycle ≤ 2 %
(1)
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94546
Revision: 12-May-10
19MT050XFAPbF
"Full Bridge" FREDFET MTP
(Power MOSFET), 31 A
Vishay Semiconductors
AVALANCHE CHARACTERISTICS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
EAS
(1)
-
-
493
mJ
Avalanche current
IAR
(2)
-
-
31
A
Repetitive avalanche energy
EAR (2)
-
-
114
mJ
Single pulse avalanche energy
Notes
(1) Starting T = 25 °C, L = 1.0 mH, R = 25 Ω, I
J
g
AS = 31 A
(2) Repetitive rating; pulse width limited by maximum junction temperature
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
TJ
- 40
-
150
Storage temperature range
TStg
- 40
-
125
Junction to case per MOSFET
RthJC
-
-
0.44
-
0.06
-
Operating junction temperature range
Case to sink
RthCS
TEST CONDITIONS
UNITS
°C
Heatsink compound thermal
conductivity = 1 W/mK
°C/W
Clearance (1)
External shortest distance in air
between 2 terminals
5.5
-
-
Creepage (1)
Shortest distance along external
surface of the insulating material
between 2 terminals
8
-
-
-
66
-
Weight
mm
g
Note
Standard version only i.e. without optional thermistor
(1)
Document Number: 94546
Revision: 12-May-10
For technical questions within your region, please contact one of the following:
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19MT050XFAPbF
"Full Bridge" FREDFET MTP
(Power MOSFET), 31 A
Vishay Semiconductors
2.5
ID, Drain-to-Source Current (A)
100
10
1
5.0V
0.1
20µs PULSE WIDTH
Tj = 25°C
ID = 31A
VGS = 10V
2.0
(Normalized)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
R DS(on) , Drain-to-Source On Resistance
1000
1.0
0.01
0.5
0.1
100
1.5
1
10
100
-60 -40 -20
60
80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
100000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
5.0V
1
Ciss
1000
Coss
100
20µs PULSE WIDTH
Tj = 150°C
Crss
0.1
10
0.1
1
10
100
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
16
VGS , Gate-to-Source Voltage (V)
1000
ID, Drain-to-Source Current ( A)
40
Fig. 1 - Typical Output Characteristics
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
20
T J , Junction Temperature (°C)
TOP
10
0
VDS, Drain-to-Source Voltage (V)
100
T J = 150°C
10
1
T J = 25°C
VDS = 50V
20µs PULSE WIDTH
0
4.0
5.0
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
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ID= 31A
VDS= 400V
VDS= 250V
VDS= 100V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
Q G Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94546
Revision: 12-May-10
19MT050XFAPbF
"Full Bridge" FREDFET MTP
(Power MOSFET), 31 A
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000.0
Vishay Semiconductors
100.0
T J = 150°C
10.0
1.0
T J = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
1msec
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
100µsec
10
0.1
1.4
Tc = 25°C
Tj = 150°C
Single Pulse
1
10msec
10
VSD, Source-toDrain Voltage (V)
100
1000
10000
VDS , Drain-toSource Voltage (V)
Fig. 7 - Typical Source Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
32
28
24
20
16
12
8
4
0
25
50
75
100
125
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
VDS
VDS
90 %
VGS
D.U.T.
Rg
+
- VDD
10 %
10 V
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
Document Number: 94546
Revision: 12-May-10
VGS
td(on)
tr
td(off)
tf
Fig. 10b - Switching Time Waveforms
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19MT050XFAPbF
"Full Bridge" FREDFET MTP
(Power MOSFET), 31 A
Vishay Semiconductors
1
0.20
0.10
0.05
p
(
thJC
D = 0.50
0.1
0.02
0.01
0.01
τJ
R1
R1
τJ
τ1
R2
R2
τ2
τ1
R3
R3
τ3
τ2
τ
τC
τ
τ3
Ci= τi/Ri
Ci i/Ri
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
EAS, Single Pulse Avalanche Energy (mJ)
1000
ID
14A
19A
BOTTOM 31A
TOP
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig. 12a - Maximum Avalanche Energy vs. Drain Current
15 V
tp
L
VDS
D.U.T
Rg
IAS
20 V
tp
Driver
+
- VDD
0.01 Ω
Fig. 12b - Unclamped Inductive Test Circuit
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V(BR)DSS
A
IAS
Fig. 12c - Unclamped Inductive Waveforms
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Document Number: 94546
Revision: 12-May-10
19MT050XFAPbF
"Full Bridge" FREDFET MTP
(Power MOSFET), 31 A
Vishay Semiconductors
Current regulator
Same type as D.U.T.
50 kΩ
12 V
0.2 μF
QG
0.3 μF
VGS
+
- VDS
D.U.T.
QGS
VGS
QGD
VG
3 mA
IG
ID
Charge
Current sampling resistors
Fig. 13a - Gate Charge Test Circuit
Fig. 13b - Basic Gate Charge Waveform
+
D.U.T.
3
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
2
-
-
4
+
1
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - Device Under Test
+
-
VDD
Fig. 14 - Peak Diode Recovery dV/dt Test Circuit
1 Driver gate drive
Period
P.W.
D=
P.W.
Period
VGS = 10 V (1)
2 D.U.T. ISD waveform
Reverse
Body diode forward
recovery
current
current
dI/dt
3 D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Reapplied
voltage
4
Body diode forward drop
Inductor current
Ripple ≤ 5 %
(1)
ISD
VGS = 5 V for logic level devices
Fig. 15 - For N-Channel Power MOSFETs
Document Number: 94546
Revision: 12-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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19MT050XFAPbF
"Full Bridge" FREDFET MTP
(Power MOSFET), 31 A
Vishay Semiconductors
9, 10
4
3
5
6
15, 16
13, 14
2
1
7
8
11, 12
Fig. 16 - Electrical diagram
ORDERING INFORMATION TABLE
Device code
19
MT
050
X
F
A
PbF
1
2
3
4
5
6
7
1
-
Current rating
2
-
Essential part number
3
-
Voltage code (050 = 500 V)
4
-
Speed/type (X = Power MOSFET)
5
-
Circuit configuration
(F = Full bridge - see Circuit Configuration table)
6
-
A = Al2O3 DBC substrate
7
-
PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
Full bridge
F
CIRCUIT DRAWING
LINKS TO RELATED DOCUMENTS
Dimensions
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www.vishay.com/doc?95245
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94546
Revision: 12-May-10
Outline Dimensions
Vishay Semiconductors
MTP MOSFET/IGBT Full-Bridge
DIMENSIONS in millimeters
Ø5
Ø 1.1
4
20.5
12 ± 0.5
2.5
31.8
33
3
2
13
4
14
9
10
1
11
15
5
12
8
16
7
6
0.3 ± 0.1
7
6.6 ± 0.1
8 ± 0.1
45°
11.4 ± 0.1 11.3 ± 0.1
27.5
3 ± 0.1
5.3 ± 0.1
3 ± 0.1
7.4 ± 0.1
5.3 ± 0.1
Ø 5.2 x 3
8 ± 0.1
7 ± 0.1
R5.75 (x 2)
7.4 ± 0.1
4.9 ± 0.1
6.6 ± 0.1
39.5
44.5
48.7
0.6 x h1.2
1.3
63.5 ± 0.25
Document Number: 95245
Revision: 24-Sep-08
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Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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