VISHAY GA100NA60UP

GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
FEATURES
• Ultrafast: Optimized for minimum saturation
voltage and speed 0 to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolated package (2500 V AC/RMS)
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial market
SOT-227
BENEFITS
PRODUCT SUMMARY
VCES
600 V
IC DC
100 A
VCE(on) at 100 A, 25 °C
1.8 V
• Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies  20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
Continuous collector current
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Gate to emitter voltage
VGE
RMS isolation voltage
VISOL
Maximum power dissipation
Operating junction and storage
temperature range
Mounting torque
TEST CONDITIONS
VCES
MAX.
UNITS
600
V
TC = 25 °C
100
TC = 100 °C
50
A
200
Repetitive rating: VGE = 20 V; pulse width limited
by maximum junction temperature (fig. 20)
200
± 20
PD
Any terminal to case, t = 1 minute
2500
TC = 25 °C
250
TC = 100 °C
100
TJ, TStg
V
W
- 55 to + 150
°C
12
(1.3)
Ibf · in
(N · m)
6 to 32 or M3 screw
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TYP.
MAX.
Junction to case, IGBT
RthJC
-
0.50
Thermal resistance, junction to case, diode
RthJC
-
1.0
Case to sink, flat, greased surface
RthCS
0.05
-
30
-
Weight of module
Document Number: 94543
Revision: 22-Jul-10
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UNITS
°C/W
g
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GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
Temperature coeffecient of
breakdown voltage
V(BR)CES
TEST CONDITIONS
VGE = 0 V, IC = 250 μA
V(BR)CESTJ
VGE = 0 V, IC = 1.0 mA
Collector to emitter saturation voltage
VCE(on)
VGE = 15 V, IC = 100 A
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 250 μA
Temperature coefficient of
threshold voltage
VGE(th)/ TJ
VCE = VGE, IC = 250 μA
Forward transconductance
gfe
Zero gate voltage collector current
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
VGE = 15 V, IC = 50 A
MIN.
TYP.
MAX.
UNITS
600
-
-
V
-
0.36
-
V/°C
-
1.49
2.1
-
1.80
-
-
1.47
-
3.0
-
6.0
-
- 7.6
-
mV/°C
VCE = 100 V, IC = 50 A
34
52
-
S
VGE = 0 V, VCE = 600 V
-
-
250
μA
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
-
1.3
mA
-
1.3
1.6
-
1.16
1.3
-
-
± 100
nA
MIN.
TYP.
MAX.
UNITS
-
430
640
See fig. 1, 4
VGE = 15 V, IC = 50 A, TJ = 150 °C
IC = 50 A
See fig. 12
IC = 50 A, TJ = 150 °C
VGE = ± 20 V
V
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate emitter charge (turn-on)
Qge
Gate collector charge (turn-on)
Qgc
Turn-on delay time
Rise time
Fall time
48
72
-
130
190
td(on)
-
57
-
tr
-
80
-
-
240
-
tf
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Ets
Turn-on delay time
td(on)
Etot
Rise time
tr
Turn-off delay time
td(off)
Fall time
IC = 50 A
VCC = 400 V
VGE = 15 V
-
td(off)
Turn-off delay time
TEST CONDITIONS
tf
See fig. 7
TJ = 25 °C
IC = 60 A, VCC = 480 V
VGE = 15 V, Rg = 5.0
energy losses include “tail” and
diode reverse recovery
TJ = 150 °C
IC = 60 A, VCC = 480 V
VGE = 15 V, Rg = 5.0
energy losses include “tail” and
diode reverse recovery
-
120
-
-
0.41
-
-
2.51
-
-
2.92
4.4
-
57
-
-
80
-
-
380
-
-
170
-
nC
ns
mJ
ns
Total switching loss
Ets
-
4.78
-
mJ
Internal emitter inductance
LE
-
2.0
-
nH
Input capacitance
Cies
-
7400
-
Output capacitance
Coes
-
730
-
Reverse transfer capacitance
Cres
-
90
-
-
90
140
-
120
180
-
7.3
11
-
11
16
-
360
550
-
780
1200
-
370
-
-
220
-
Diode reverse recovery time
trr
Diode peak reverse recovery current
Irr
Diode reverse recovery charge
Qrr
Diode peak rate of fall recovery
during tb
dI(rec)M/dt
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VGE = 0 V
VCC = 30 V
f = 1.0 MHz
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
See fig. 6
See fig. 13
See fig. 14
See fig. 15
See fig. 16
IF = 50 A
VR = 200 V
dI/dt = 200
A/μs
For technical questions within your region, please contact one of the following:
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pF
ns
A
nC
A/μs
Document Number: 94543
Revision: 22-Jul-10
GA100NA60UP
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
I C , Collector-to-Emitter Current (A)
1000
Vishay Semiconductors
100
Maximum DC Collector Current(A)
?TJ = 25 °C
?TJ = 150 °C
100
10
15V
?V20μs =PULSE
WIDTH
80
60
40
20
GE
1
0.0
1.0
2.0
3.0
4.0
0
5.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
VCE , Collector-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Maximum Collector Current vs.
Case Temperature
2.5
1000
15V
?V80 us=PULSE
WIDTH
VCE , Collector-to-Emitter Voltage(V)
I C, Collector-to-Emitter Current (A)
GE
TJ = 150 °C
100
?TJ = 25 °C
10
V CC = 50V
5μs PULSE WIDTH
1
5.0
6.0
7.0
8.0
2.0
?
IC = 100 A
?
IC = 50 A
1.5
?
IC = 25 A
1.0
-60 -40 -20
9.0
VGE , Gate-to-Emitter Voltage (V)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 2 - Typical Transfer Characteristics
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.01
0.001
0.00001
0.20
0.10
0.05
0.02
0.01
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction to Case
Document Number: 94543
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
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GA100NA60UP
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
Vishay Semiconductors
14000
10000
?Cies
8000
6000
Coes
4000
2000
RG = 5.0Ω
VGE = 15V
VCC = 480V
Total Switching Losses (mJ)
12000
C, Capacitance (pF)
100
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
IC = 120A
10
IC = 60A
IC = 30A
1
Cres
0.1
0
1
10
-60 -40 -20
100
VCE , Collector-to-Emitter Voltage (V)
40
60
80 100 120 140 160
12
VCC = 400V
I C = 50A
RG = 5.0Ω
TJ = 150°C
VGE = 15V
10
16
Total Switching Losses (mJ)
VGE , Gate-to-Emitter Voltage (V)
20
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
Fig. 6 - Typical Capacitance vs.
Collector to Emitter Voltage
20
0
T J, Junction Temperature (°C)
12
8
VCC = 480V
8
6
4
2
4
0
0
0
100
200
300
400
60
80
100
IC , Collector Current (A)
Fig. 7 - Typical Gate Charge vs.
Gate to Emitter Voltage
Fig. 10 - Typical Switching Losses vs.
Collector to Emitter Current
1000
I C, Collector-to-Emitter Current (A)
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 60A
8
40
QG , Total Gate Charge (nC)
10
Total Switching Losses (mJ)
20
500
6
4
VGE = 20V
T J = 125 oC
100
10
2
?
SAFE OPERATING AREA
0
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4
10
20
30
40
50
1
1
10
100
R G, Gate Resistance ( Ω)
VCE , Collector-to-Emitter Voltage (V)
Fig. 8 - Typical Switching Losses vs.
Gate Resistance
Fig. 11 - Turn-Off SOA
For technical questions within your region, please contact one of the following:
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1000
Document Number: 94543
Revision: 22-Jul-10
GA100NA60UP
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
Vishay Semiconductors
100
1000
I F = 100A
I F = 25A
100
Irr- ( A)
Instantaneous forward current - IF (A)
I F = 50A
T J = 1 5 0 °C
T J = 1 2 5 °C
TJ =
10
25 °C
10
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
1
0.0
0.4
0.8
1.2
1.6
1
100
2.0
F orwa rd V oltag e D ro p - V F M (V )
1000
di f /dt - (A/μ s)
Fig. 14 - Typical Recovery Current vs. dIF/dt
Fig. 12 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
4000
150
I F = 100A
V R = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
I F = 50A
I F = 25A
120
I F = 100A
3000
I F = 50A
Qrr- (nC)
trr- (nC)
IF = 25A
90
2000
60
1000
30
V R = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
0
100
di f /dt - (A /μ s)
1000
Fig. 13 - Typical Reverse Recovery vs. dIF/dt
Document Number: 94543
Revision: 22-Jul-10
0
100
di f /dt - (A /µ s)
1000
Fig. 15 - Typical Stored Charge vs. dIF/dt
For technical questions within your region, please contact one of the following:
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GA100NA60UP
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
Vishay Semiconductors
10000
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
IF = 100A
90%
di (rec) M/dt- (A /µs)
I F = 50A
10%
Vge
I F = 25A
VC
90%
td(off)
1000
10%
IC 5%
tf
tr
t d(on)
t=5μs
E on
E off
E ts = (Eon +Eoff )
100
100
1000
di f /dt - (A/µ s)
Fig. 16 - Typical dI(rec)M/dt vs. dIF/dt
Fig. 17b - Test Waveforms for Circuit of Fig. 17a,
Defining Eoff, td(off), tf
Gate voltage D.U.T.
10 % + VG
Same type
device
as
D.U.T.
80 %
of VCE
430 µF
D.U.T. voltage
and current
Vce
VCC
D.U.T.
+ VG
10 %
IC
90 % IC
tr
td(on)
Ipk
IC
5 % VCE
∫
Eon =
t1
Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
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t2
VCE IC dt
t1
t2
Fig. 17c - Test Waveforms for Circuit of Fig. 17a,
Defining Eon, td(on), tr
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94543
Revision: 22-Jul-10
GA100NA60UP
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
trr
IC
Qrr =
tx
10 % VCC
Vpk
∫
Vishay Semiconductors
trr
IC dt
tx
10 % Irr
VCC
Irr
Diode recovery
waveforms
Erec =
∫
Diode reverse
recovery energy
t3
t4
Vd IC dt
t3
t4
Fig. 17d - Test Waveforms for Circuit of Fig. 17a,
Defining Erec, trr, Qrr, Irr
L
1000 V
VG Gate signal
device under test
50 V
D.U.T.
VC*
6000 µF
100 V
Current D.U.T.
Voltage in D.U.T.
Fig. 18a - Clamped Inductive Load Test Circuit
Current in D1
RL =
0 - 480 V
t0
t1
t2
Fig. 17e - Macro Waveforms for Figure 17a's Test Circuit
Document Number: 94543
Revision: 22-Jul-10
480 V
4 x IC at 25 °C
Fig. 18b - Pulsed Collector Current Test Circuit
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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GA100NA60UP
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
1
G
A
100
N
A
60
U
P
1
2
3
4
5
6
7
8
-
Device:
G = IGBT
2
-
Silicon technology:
A = Generation 4 IGBT, Generation 2 HEXFRED®
3
-
Current rating (100 = 100 A)
4
-
N = High side chopper
5
-
SOT-227
6
-
Voltage rating (60 = 600 V)
7
-
U = Ultrafast with matching diode
8
-
None = Standard production
P = Lead (Pb)-free
CIRCUIT CONFIGURATION
3
2
1
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94543
Revision: 22-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
-C-
12.30 (0.484)
11.80 (0.464)
0.12 (0.005)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: [email protected]
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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Document Number: 91000
Revision: 11-Mar-11
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