VISHAY 20MT120UFAPBF

20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive VCE(on) temperature coefficient
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery
• Low diode VF
• Square RBSOA
• Al2O3 DBC substrate
MTP
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
BENEFITS
VCES
1200 V
IC at TC = 96 °C
20 A
VCE(on) (typical)
at IC = 20 A, 25 °C
3.29 V
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
Continuous collector current
TEST CONDITIONS
VCES
IC
TC = 96 °C
MAX.
UNITS
1200
V
20
Pulsed collector current
ICM
100
Clamped inductive load current
ILM
100
Diode maximum forward current
IFM
100
Gate to emitter voltage
VGE
± 20
RMS isolation voltage
VISOL
Maximum power dissipation (only IGBT)
Document Number: 94470
Revision: 03-Aug-10
PD
A
V
Any terminal to case, t = 1 minute
2500
TC = 25 °C
240
TC = 100 °C
96
W
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20MT120UFAPbF
Vishay Semiconductors
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
Temperature coefficient of breakdown voltage
Collector to emitter saturation voltage
Gate threshold voltage
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
Temperature coefficient of threshold voltage
Transconductance
VGE(th)/TJ
gfe
Zero gate voltage collector current
Gate to emitter leakage current
ICES
(1)
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
1200
-
-
V
VGE = 0 V, IC = 3 mA (25 to 125 °C)
-
+ 1.3
-
V/°C
VGE = 15 V, IC = 20 A
-
3.29
3.59
VGE = 15 V, IC = 40 A
-
4.42
4.66
VGE = 15 V, IC = 20 A, TJ = 125 °C
-
3.87
4.11
VGE = 15 V, IC = 40 A, TJ = 125 °C
-
5.32
5.70
VGE = 15 V, IC = 20 A, TJ = 150 °C
-
3.99
4.27
VCE = VGE, IC = 250 μA
4
-
6
VCE = VGE, IC = 3 mA (25 to 125 °C)
-
- 14
-
mV/°C
VCE = 50 V, IC = 20 A, PW = 80 μs
-
17.5
-
S
VGE = 0 V, VCE = 1200 V, TJ = 25 °C
-
-
250
μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
0.7
3.0
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
-
2.9
9.0
VGE = ± 20 V
-
-
± 250
nA
MIN.
TYP.
MAX.
UNITS
-
176
264
VCC = 600 V
VGE = 15 V
-
19
30
-
89
134
VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 25 °C,
energy losses include tail and
diode reverse recovery
-
0.513
0.770
-
0.402
0.603
-
0.915
1.373
-
0.930
1.395
-
0.610
0.915
-
1.540
2.310
-
2530
3790
-
344
516
-
78
117
VGE = 0 V, IC = 250 μA
V
mA
Note
(1) I
CES includes also opposite leg overall leakage
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
TEST CONDITIONS
IC = 20 A
VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 125 °C,
energy losses include tail and
diode reverse recovery
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 120 A
VCC = 1000 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
Short circuit safe operating area
SCSOA
TJ = 150 °C
VCC = 900 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
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2
nC
mJ
pF
Fullsquare
10
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-
-
μs
Document Number: 94470
Revision: 03-Aug-10
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Vishay Semiconductors
DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Diode forward voltage drop
VFM
Reverse recovery energy of the diode
Erec
Diode reverse recovery time
trr
Peak reverse recovery current
Irr
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
IC = 20 A
-
2.48
2.94
IC = 40 A
-
3.28
3.90
IC = 20 A, TJ = 125 °C
-
2.44
2.84
IC = 40 A, TJ = 125 °C
-
3.45
4.14
IC = 20 A, TJ = 150 °C
-
2.21
2.93
VGE = 15 V, Rg = 5 , L = 200 μH
VCC = 600 V, IC = 20 A
TJ = 125 °C
-
420
630
μJ
-
98
150
ns
-
33
50
A
UNITS
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
TJ
- 40
-
150
TStg
- 40
-
125
-
0.53
0.64
-
0.69
0.83
Heatsink compound thermal conductivity = 1 W/mK
-
0.06
-
Clearance
External shortest distance in air between 2 terminals
5.5
-
-
Creepage
Shortest distance along external surface of the
insulating material between 2 terminals
8
-
-
Mounting torque
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
°C
IGBT
Junction to case
Diode
Case to sink per module
RthJC
RthCS
mm
Weight
Document Number: 94470
Revision: 03-Aug-10
°C/W
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3 ± 10 %
Nm
66
g
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3
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Vishay Semiconductors
160
1000
140
DC
100
I C (A)
TC (°C)
120
100
10
80
60
1
40
0
5
10
15
20
10
25
100
1000
10000
VCE (V)
IC (A)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
250
Fig. 4 - Reverse Bias SOA
TJ = 150 °C; VGE = 15 V
100
200
80
150
60
ICE (A)
Ptot (W)
VGE = 18V
100
VGE
VGE
VGE
VGE
= 15V
= 12V
= 10V
= 8.0V
40
20
50
0
0
0
20
40
60
80
0
100 120 140 160
2
4
6
8
10
VCE (V)
TC (°C)
Fig. 5 - Typical IGBT Output Characteristics
TJ = - 40 °C; tp = 80 μs
Fig. 2 - Power Dissipation vs. Case Temperature
1000
100
100
80
VGE = 18V
IC (A)
100 µs
1
1ms
ICE (A)
10 µs
10
VGE
VGE
VGE
VGE
= 15V
= 12V
= 10V
= 8.0V
60
40
DC
0.1
20
0.01
0
1
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4
10
100
1000
10000
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 3 - Forward SOA
TC = 25 °C; TJ  150 °C
Fig. 6 - Typical IGBT Output Characteristics
TJ = 25 °C; tp = 80 μs
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Document Number: 94470
Revision: 03-Aug-10
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
20
100
VGE
VGE
VGE
VGE
VGE
80
= 18V
18
= 15V
= 12V
= 10V
= 8.0V
60
VCE (V)
ICE (A)
Vishay Semiconductors
40
16
ICE = 10A
ICE = 20A
14
ICE = 40A
12
10
8
6
20
4
2
0
0
0
2
4
6
8
10
5
15
20
VGE (V)
Fig. 7 - Typical IGBT Output Characteristics
TJ = 125 °C; tp = 80 μs
Fig. 10 - Typical VCE vs. VGE
TJ = 25 °C
20
120
-40°C
25°C
125°C
100
VCE (V)
80
IF (A)
10
VCE (V)
60
40
18
ICE = 10A
16
ICE = 20A
14
ICE = 40A
12
10
8
6
4
20
2
0
0
0.0
1.0
2.0
3.0
4.0
5.0
5
15
20
VGE (V)
Fig. 8 - Typical Diode Forward Characteristics
tp = 80 μs
Fig. 11 - Typical VCE vs. VGE
TJ = 125 °C
20
300
18
16
ICE = 40A
ICE = 20A
14
ICE = 10A
T J = 25°C
250
T J = 150°C
200
12
ICE (A)
VCE (V)
10
VF (V)
10
8
150
100
6
4
50
2
0
0
5
10
15
20
0
5
10
15
20
VGE (V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = - 40 °C
Fig. 12 - Typical Transfer Characteristics
VCE = 50 V; tp = 10 μs
Document Number: 94470
Revision: 03-Aug-10
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5
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Vishay Semiconductors
2400
1000
2000
Energy (µJ)
Swiching Time (ns)
EON
1600
1200
EOFF
800
tdOFF
tF
100
tdON
tR
400
0
10
0
10
20
30
40
50
0
10
20
30
40
50
60
RG (Ω)
IC (A)
Fig. 16 - Typical Switching Time vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
Fig. 13 - Typical Energy Loss vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 5 ; VGE = 15 V
1000
40
RG = 5.0Ω
RG = 10 Ω
tdOFF
IRR (A)
Swiching Time (ns)
30
tF
100
RG = 30 Ω
20
RG = 50 Ω
tdON
10
tR
0
10
0
10
20
30
40
0
50
10
15
20
25
30
IF (A)
Fig. 14 - Typical Switching Time vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 100 ; VGE = 15 V
Fig. 17 - Typical Diode Irr vs. IF
TJ = 150 °C
35
40
2000
1600
EON
30
1200
IRR (A)
Energy (µJ)
5
IC (A)
EOFF
20
800
10
400
0
0
0
10
20
30
40
50
RG (Ω)
Fig. 15 - Typical Energy Loss vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
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6
60
0
10
20
30
40
50
60
RG (Ω)
Fig. 18 - Typical Diode Irr vs. Rg
TJ = 150 °C; IF = 5.0 A
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Document Number: 94470
Revision: 03-Aug-10
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
40
Vishay Semiconductors
10000
Cies
35
Capacitance (pF)
IRR (A)
30
25
20
1000
Coes
100
Cres
15
10
10
0
200
400
600
800
0
1000
20
40
60
80
100
diF /dt (A/µs)
VCE (V)
Fig. 19 - Typical Diode Irr vs. dIF/dt
VCC = 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 °C
Fig. 21 - Typical Capacitance vs. VCE
VGE = 0 V; f = 1 MHz
3.0
16
14
5.0Ω
2.5
10 Ω
600V
12
30A
1.5
10
20A
30Ω
50Ω
VGE (V)
Q RR (µC)
2.0
8
6
10A
1.0
4
0.5
2
0
0.0
0
200
400
600
800
1000
0
1200
40
80
120
160
200
Q G , Total Gate Charge (nC)
diF /dt (A/µs)
Fig. 20 - Typical Diode Qrr
VCC = 400 V; VGE = 15 V; TJ = 150 °C
Fig. 22 - Typical Gate Charge vs. VGE
ICE = 5.0 A; L = 600 μH
1
D = 0.5
D = 0.2
Thermal Response (ZthJC)
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
0.001
D =0.01
Single Pulse
(Thermal Response)
0.0001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Document Number: 94470
Revision: 03-Aug-10
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20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Vishay Semiconductors
1
D = 0.5
Thermal Response (ZthJC)
D = 0.2
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D =0.01
Single Pulse
(Thermal Response)
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
Driver
L
+
-
D.U.T.
0
VCC
D +
C -
1K
900 V
D.U.T.
Fig. CT.1 - Gate Charge Circuit (Turn-Off)
L
Fig. CT.3 - S.C. SOA Circuit
Diode clamp/
D.U.T.
L
- +
80 V
+
-
-5V
D.U.T
D.U.T./
driver
1000 V
Rg
+
VCC
Rg
Fig. CT.2 - RBSOA Circuit
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Fig. CT.4 - Switching Loss Circuit
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Document Number: 94470
Revision: 03-Aug-10
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Vishay Semiconductors
9, 10
4
5
3
6
15, 16
13, 14
2
7
1
8
11, 12
Fig. 25 - Electrical diagram
ORDERING INFORMATION TABLE
Device code
20
MT
120
U
F
A
PbF
1
2
3
4
5
6
7
1
-
Current rating (20 = 20 A)
2
-
Essential part number
3
-
Voltage code (120 = 1200 V)
4
-
Speed/type (U = Ultrafast IGBT)
5
-
Circuit configuration (F = Full bridge)
6
-
A = Al2O3 DBC substrate
7
-
Lead (Pb)-free
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 94470
Revision: 03-Aug-10
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Outline Dimensions
Vishay Semiconductors
MTP MOSFET/IGBT Full-Bridge
DIMENSIONS in millimeters
Ø5
Ø 1.1
4
20.5
12 ± 0.5
2.5
31.8
33
3
2
13
4
14
9
10
1
11
15
5
12
8
16
7
6
0.3 ± 0.1
7
6.6 ± 0.1
8 ± 0.1
45°
11.4 ± 0.1 11.3 ± 0.1
27.5
3 ± 0.1
5.3 ± 0.1
3 ± 0.1
7.4 ± 0.1
5.3 ± 0.1
Ø 5.2 x 3
8 ± 0.1
7 ± 0.1
R5.75 (x 2)
7.4 ± 0.1
4.9 ± 0.1
6.6 ± 0.1
39.5
44.5
48.7
0.6 x h1.2
1.3
63.5 ± 0.25
Document Number: 95245
Revision: 24-Sep-08
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000