SANKEN 2SA1695

2SA1695
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468)
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
–140min
IC=–50mA
V
50min∗
VCE=–4V, IC=–3A
A
VCE(sat)
IC=–5A, IB=–0.5A
–0.5max
V
100(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
400typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
20.0min
–4
PC
Tstg
a
ø3.2±0.1
b
IB
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
5.45±0.1
5.45±0.1
B
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–60
12
–5
–10
5
–0.5
0.5
0.17typ
1.86typ
0.27typ
I C – V BE Temperature Characteristics (Typical)
–3
–10
A
Collector Current I C (A)
–8
–100
mA
–7 5m A
–6
–50mA
–4
–25mA
–2
I B =–10mA
0
–1
0
–2
–3
–4
–2
–1
–2
I C =–10A
0
0
–0.5
–1.0
–1.5
0
–1
(V C E =–4V)
200
Typ
50
–1
–5
Transient Thermal Resistance
DC Curr ent Gain h F E
125˚C
100
25˚C
100
–30˚C
50
30
–0.02
–10
–0.1
–0.5
–1
–5
–10
θ j-a – t Characteristics
3
1
0.5
0.1
1
10
f T – I E Characteristics (Typical)
100
1000 2000
Time t(ms)
Collector Current I C (A)
Collector Current I C (A)
–1.5
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
200
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
100
–0.1
–3
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
nk
Emitter Current I E (A)
10
si
1
50
at
0.1
he
0
0.02
ite
ms
Without Heatsink
Natural Cooling
fin
10
–0.5
In
s
–1
ith
3m
s
10
DC
–5
0m
Typ
10
20
Co lle ctor Cu rren t I C ( A)
–10
W
Maximu m Power Diss ip ation P C (W)
–30
30
Cut-o ff F requ ency f T (MH Z )
DC Curr ent Gain h F E
0
–2.0
(V C E =–4V)
–0.5
–4
Base Current I B (A)
h FE – I C Characteristics (Typical)
–0.1
–6
–5A
Collector-Emitter Voltage V C E (V)
30
–0.02
–8
p)
0m
Tem
–15
se
0
(Ca
–2
˚C
0
(V C E =–4V)
125
–3
θ j- a ( ˚C/W)
00
A
0m
Collector-Emitter Saturation Voltage V C E (s at) (V )
–4
A
0m
1.4
E
V CE ( sat ) – I B Characteristics (Typical)
–10
mA
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
Collector Current I C (A)
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
)
hFE
Temp
V(BR)CEO
A
2.0±0.1
(Case
V
–10
4.8±0.2
–30˚C
–6
IC
mp)
VEBO
e Te
–140
(Cas
VCEO
15.6±0.4
9.6
25˚C
V
1.8
VCB=–140V
–140
5.0±0.2
ICBO
VCBO
2.0
Unit
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
2SA1695
Unit
4.0
■Electrical Characteristics
Conditions
2SA1695
19.9±0.3
Symbol
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
29