SANYO 2SK2682LS

Ordering number : ENN6783A
2SK2682LS
N-Channel Silicon MOSFET
2SK2682LS
Ultrahigh-Speed Switching Applications
Features
•
•
•
Package Dimensions
Low ON-resistance.
High-speed diode.
Micaless package facilitating mounting.
unit : mm
2078C
[2SK2682LS]
10.0
4.5
2.8
0.6
16.1
16.0
3.5
7.2
3.2
1.2
1.2
14.0
3.6
0.9
0.75
0.7
1 2 3
2.4
1 : Gate
2 : Drain
3 : Source
Specifications
2.55
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
2.55
SANYO : TO-220FI(LS)
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
250
Gate-to-Source Voltage
VGSS
±30
V
ID
13
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
V
52
A
2
W
Allowable Power Dissipation
PD
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
Zero-Gate Voltage Drain Current
V(BR)DSS
V(BR)GSS
IDSS
ID=1mA, VGS=0
IG=±100µA, VGS=0
VDS=250V, VGS=0
Gate-to-Source Leakage Current
IGSS
VGS=±25V, VDS=0
VDS=10V, ID=1mA
Gate-to-Source Breakdown Voltage
Cutoff Voltage
VGS(off)
Ratings
min
typ
max
Unit
250
V
±30
V
2.0
1.0
mA
±10
µA
3.0
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3431 / N1500 TS IM TA-3044 No.6783-1/4
2SK2682LS
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
yfs
RDS(on)
Ciss
VDS=10V, ID=6A
ID=6A, VGS=10V
VDS=20V, f=1MHz
1290
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
300
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
125
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
22
ns
Rise Time
tr
td(off)
See specified Test Circuit.
66
ns
See specified Test Circuit.
320
ns
tf
See specified Test Circuit.
105
ns
IS=12A, VGS=0
IS=12A, di/dt=100A/µs
160
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
VSD
trr
Diode Reverse Recovery Time
6
10
S
200
270
1.0
mΩ
1.5
V
ns
Marking : K2682
Switching Time Test Circuit
VDD=100V
VIN
10V
0V
ID=6A
RL=16.7Ω
VIN
VOUT
D
PW=10µs
D.C.≤1%
G
P.G
50Ω
2SK2682LS
S
ID -- VDS
8
4V
6
C
75°
8
6
4
4
2
2
VGS=3V
0
0
1
4
5
Drain-to-Source Voltage, VDS -- V
IT02616
2
3
0
2.0
400
350
300
250
200
150
100
50
0
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
18
20
IT02618
3.0
3.5
4.0
4.5
5.0
5.5
6.0
IT02617
RDS(on) -- Tc
500
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Tc=25°C
ID=6A
450
2.5
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
500
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
10
C
25°C
10
12
--25
°
12
14
Tc=
Drain Current, ID -- A
14
VDS=10V
16
10
Drain Current, ID -- A
16
ID -- VGS
18
V 6V
18
20
5V
8V
20
VGS=10V
ID=6A
400
300
200
100
0
--60
--40
--20
0
20
40
60
80
100
Case Temperature, Tc -- °C
120
140
160
IT02619
No.6783-2/4
2SK2682LS
yfs -- ID
7
5
f=1MHz
3
2
3
2
10
°C
--25
Tc=
°C
C
25
75°
7
5
3
2
1.0
Ciss
1000
7
5
Coss
3
2
Crss
100
7
5
3
2
7
5
3
0.1
10
2
3
5
7 1.0
2
3
5
7
2
10
Drain Current, ID -- A
3
0
100µs
s
2
on
Operation in
this area is
limited by RDS(on).
1.0
7
5
ati
er
Drain Current, ID -- A
s
1m
m
10
s
0m
td(on)
3
op
tr
10
7
10
7
5
DC
tf
30
IT02621
<10µs
ID=13A
3
2
Tc=25°C
Single pulse
2
10
0.1
2
3
5
7
1.0
2
3
5
7
Drain Current, ID -- A
2
10
0.1
0.1
3
2 3
5 7 1.0
Allowable Power Dissipation, PD -- W
1.5
1.0
0.5
0
5 7 10
2 3
5 7 100
2 3
5 71000
IT02623
PD -- Tc
40
2.0
2 3
Drain-to-Source Voltage, VDS -- V
IT02622
PD -- Ta
2.5
Allowable Power Dissipation, PD -- W
25
IDP=52A
2
2
3
20
3
3
5
15
ASO
100
7
5
td (off)
100
10
Drain-to-Source Voltage, VDS -- V
VDD=100V
VGS=10V
7
5
5
IT02620
SW Time -- ID
1000
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- VDS
10000
7
5
VDS=10V
Ciss, Coss, Crss -- pF
Forward Transfer Admittance, yfs -- S
100
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02624
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT02625
No.6783-3/4
2SK2682LS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
PS No.6783-4/4