2SK3618 Ordering number : ENN8325 2SK3618 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 Gate-to-Source Voltage VGSS ±20 V 8 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 32 A 1 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ Unit max ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V 100 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=4A 1.2 RDS(on)1 RDS(on)2 ID=4A, VGS=10V ID=4A, VGS=4V Input Capacitance Ciss pF Coss 80 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 880 Output Capacitance 55 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 11.5 ns See specified Test Circuit. 14 ns td(off) tf See specified Test Circuit. 100 ns See specified Test Circuit. 42 ns Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions IDSS IGSS 4 Marking : K3618 V 1 µA ±10 µA 2.6 7 V S 100 130 mΩ 130 180 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PA MS IM TB-00001380 No.8325-1/4 2SK3618 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=50V, VGS=10V, ID=8A 24 nC Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=8A 3.2 nC Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=8A 5.5 Diode Forward Voltage VSD IS=8A, VGS=0V 0.9 nC 1.2 V Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions unit : mm 7003-004 5.5 7.0 5.5 4 0.85 0.7 0.5 1.5 1.5 4 2.3 6.5 5.0 0.5 0.5 1 2 1 2.5 3 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2 0.6 0.5 3 2.3 0.8 1.2 7.5 0.8 1.6 0.85 0.6 1.2 2.3 6.5 5.0 7.0 Package Dimensions unit : mm 7518-004 1 : Gate 2 : Drain 3 : Source 4 : Drain 1.2 2.3 2.3 SANYO : TP-FA SANYO : TP Switching Time Test Circuit VDD=50V 10V 0V VIN ID=4A RL=12.5Ω VOUT D VIN PW=10µs D.C.≤1% G P.G 50Ω 2SK3618 4V 6V 12 10 8 6 VGS=3V 10 5 25 °C 4 15 2 Tc= 75° --25 C °C 14 Drain Current, ID -- A V 10 Tc= -- 20 16 Drain Current, ID -- A ID -- VGS VDS=10V C 8V 18 25 75° ID -- VDS 20 25°C 25 °C S 0 0 0 0.5 1.0 1.5 2.0 2.5 Drain-to-Source Voltage, VDS -- V 3.0 IT07979 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V 4.5 5.0 IT07022 No.8325-2/4 2SK3618 RDS(on) -- VGS 160 140 120 100 80 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V V 10 S= 100 50 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 2 °C 25 10 7 = Tc 5 5°C --2 75 °C 3 2 150 IT07981 IS -- VSD VGS=0V 3 2 3 Source Current, IS -- A Forward Transfer Admittance, yfs -- S =4V V GS VG 4A, I D= 5 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 2 3 5 7 2 1.0 3 5 7 2 10 Drain Current, ID -- A 3 0 td (off) Ciss, Coss, Crss -- pF 3 2 tr td(on) 10 1.5 IT07027 f=1MHz Ciss 1000 tf 1.2 2 100 7 0.9 Ciss, Coss, Crss -- VDS 3 2 0.6 Diode Forward Voltage, VSD -- V VDD=50V VGS=10V 5 0.3 IT07026 SW Time -- ID 3 Switching Time, SW Time -- ns , 4A I D= 150 0 --50 10 VDS=10V 1.0 7 5 3 2 Coss Crss 100 7 5 7 5 3 3 0.1 2 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 3 0 5 3 2 Drain Current, ID -- A 7 6 5 4 3 10 7 5 3 2 1.0 7 5 3 2 2 0.1 7 5 1 3 2 0 5 10 15 Total Gate Charge, Qg -- nC 20 25 IT07982 15 20 25 30 IT07029 ASO 5 8 0 10 Drain-to-Source Voltage, VDS -- V VDS=50V ID=8A 9 5 IT07028 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 200 IT07980 yfs -- ID 5 250 Tc=7 5° C 25°C --25°C 3 2 RDS(on) -- Tc 300 Tc=25°C ID=4A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 <10µs 10 0 µ µs s IDP=32A ID=8A 10 1 10 0ms 1ms 0 m op s er at io n (T c= 25 °C Operation in this area ) is limited by RDS(on). D C Tc=25°C Single pulse 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7100 2 IT07983 No.8325-3/4 2SK3618 PD -- Ta PD -- Tc 25 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.25 1.00 0.75 0.50 0.25 0 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07984 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT07033 Note on usage : Since the 2SK3618 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8325-4/4