Ordering number:EN5992 P-Channel Silicon MOSFET FTS1004 DC-DC Converter Applications Features Package Dimensions · Low ON Resistance. · 4V drive. · Mounting height 1.1mm. unit:mm 2147 [FTS1004] 3.0 0.975 0.65 5 1 6.4 0.95 4.5 0.5 0.95 8 4 0.125 0.1 1.0 1.2max 0.25 Specifications 1:Drain 2:Source 3:Source 4:Gate 5:Drain 6:Source 7:Source 8:Drain SANYO:TSSOP8 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit –30 V ±20 V –3 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% –15 A Allowable Power Dissipation Mounted on a ceramic board (1000mm2×0.8mm) 1.3 W Channel Temperature PD Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 Cutoff Voltage RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Conditions ID=–1mA, VGS=0 Ratings min typ max –30 V VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA –1.0 VDS=–10V, ID=–3A ID=–3A, VGS=–10V Unit 3 –10 µA ±10 µA –2.5 V 5 S 65 85 mΩ ID=–1A, VGS=–4V VDS=–10V, f=1MHz 135 190 mΩ 470 pF VDS=–10V, f=1MHz VDS=–10V, f=1MHz 280 pF 140 pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40999 (KOTO) TA-1231 No.5992-1/4 FTS1004 Parameter Symbol Turn-ON Delay Time min typ Unit max td(on) See specified Test Circuit 10 ns tr See specified Test Circuit 30 ns td(off) See specified Test Circuit 60 ns tf See specified Test Circuit 45 ns Qg VDS=–10V, VGS=–10V, ID=–3A 15 nC VDS=–10V, VGS=–10V, ID=–3A VDS=–10V, VGS=–10V, ID=–3A IS=–3A, VGS=0 3 nC 4 Rise Time Turn-OFF Delay Time Ratings Conditions Fall Time Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD nC –1.0 –1.5 V Switching Time Test Circuit 0V –10V VDD=–15V VIN ID=–3A RL=5Ω VIN PW=10µs D.C.≤1% D VOUT G FTS1004 P.G 50Ω S I D - VDS –4 -5 -2.0 V V GS=–3.0 -1.5 -1.0 -4 -3 -2 -1 -0.5 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 0 0 -1.0 -0.5 10 7 5 |yfs| - I D C 25° C 25° C 75° – Ta= 1.0 7 5 3 2 0.1 7 5 3 2 0.01 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 Drain Current, ID – A 2 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 R DS(on) - VGS 200 VDS=–10V 3 2 -1.0 Gate-to-Source Voltage, VGS – V Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Forward Transfer Admittance, | yfs | – S Drain-to-Source Voltage, VDS – V 75° C –25 °C .0V V –10.0 Drain Current, ID – A -2.5 .5V ID - VGS VDS=–10V Ta= –3 -3.0 -6 25 °C –6.0V –4.5V –8.0V –5.0V Drain Current, ID – A -3.5 3 5 7 -10 Ta=25°C 180 ID=–3A 160 140 ID=–1A 120 100 80 60 40 20 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 Gate-to-Source Voltage, VGS – V No.5992-2/4 FTS1004 R DS(on) - Ta -10 7 5 180 120 100 =–10V 3A,VGS 80 I D=– 60 40 -1.0 7 5 3 2 -0.1 7 5 3 2 20 0 -60 2 -40 -20 0 20 40 60 80 100 120 140 -0.01 0 -0.2 -0.4 Ambient Temperature, Ta – ˚C Gate-to-Source Voltage,VGS – V Ciss,Coss,Crss – pF -1.0 -1.2 -1.4 -9 2 1000 7 5 Ciss 3 Coss 2 Crss 100 7 5 3 2 -8 -7 -6 -5 -4 -3 -2 -1 10 0 -5 -10 -15 -20 -25 0 0 -30 2 4 6 SW Time - I D 1000 7 5 3 Drain Current, ID – A 2 td(off) tf 3 tr 2 td(on) 10 7 5 3 2 3 5 7 -1.0 12 14 16 -1.0 7 5 3 2 -0.1 7 5 2 3 5 7 -10 Drain Current, ID – A 100µs 1m s I DP =–15A -10 7 5 3 2 3 2 2 -0.1 10 A S O 3 2 VDD =–15V VGS=–10V 100 7 5 8 Total Gate Charge, Qg – nC Drain-to-Source Voltage, VDS – V Switcthing Time, SW Time – ns -0.8 VGS - Qg -10 f=1MHz 3 10 I D =–3A DC Operation in this area is limited by RDS(on). op ms 10 0m s er at io n Ta=25°C Single pulse Mounted on a ceramic board (1000mm2×0.8mm) -0.01 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 2 3 5 Drain-to-Source Voltage, VDS – V P D - Ta 1.6 Allowable Power Dissipation, PD – W -0.6 Forward Voltage, VSD – V Ciss,Coss,Crss - VDS 10000 7 5 1.0 7 25°C –25°C –1 I D= Ta=75° C –4 S= A,VG 140 I F - VSD VGS=0 3 V 160 Forward Current, IF – A Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 200 1.4 1.3 M ou 1.2 nt 1.0 ed on ac er am ic 0.8 bo ar d( 10 0.6 00 m 0.4 m2 ×0 .8m m ) 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C No.5992-3/4 FTS1004 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 1999. Specifications and information herein are subject to change without notice. PS No.5992-4/4