FDMA1027P Dual P-Channel PowerTrench® MOSFET General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. -3.0 A, -20V. RDS(ON) = 120 mΩ @ VGS = -4.5 V RDS(ON) = 160 mΩ @ VGS = -2.5 V RDS(ON) = 240 mΩ @ VGS = -1.8 V Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. PIN S1 G1 D2 D1 MicroFET RoHS Compliant D1 G2 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 S2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Parameter MOSFET Drain-Source Voltage VGSS MOSFET Gate-Source Voltage ID Drain Current -Continuous -Pulsed (Note 1a) PD Power dissipation for Single Operation Power dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings -20 Units V ±8 V -2.2 A -6 1.4 W 0.7 oC -55 to +150 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient 69 (Dual Operation) RθJA Thermal Resistance, Junction-to-Ambient 151 (Dual Operation) o C/W Package Marking and Ordering Information Device Marking 027 Device FDMA1027P ©2006 Fairchild Semiconductor Corporation Reel Size 7inch 1 Tape Width 8mm Quantity 3000 units FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET August 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA -20 - - V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, Referenced to 25°C - -12 - mV/°C IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V - - -1 µA IGSS Gate-Body Leakage, VGS = ±8V, VDS = 0V - - ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250µA -0.4 -0.7 -1.3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = -250µA, Referenced to 25°C - 2 - mV/°C VGS = -4.5V, ID = -3.0A - 90 120 VGS = -2.5V, ID = -2.5A - 120 160 VGS = -1.8V, ID = -1.0A - 172 240 VGS = -4.5V, ID = -3.0A TJ = 125°C - 118 160 -20 - - A - 7 - S - 435 - pF - 80 - pF - 45 - pF - 9 18 ns - 11 19 ns - 15 27 ns RDS(ON) Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = -4.5V, VDS = -5V gFS Forward Transconductance VDS = -5V, ID = -3.0A mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time - 6 12 ns Qg Total Gate Charge - 4 6 nC Qgs Gate-Source Charge - 0.8 - nC Qgd Gate-Drain Charge - 0.9 - nC A VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6Ω VDS = -10V, ID = -3.0A, VGS = -4.5V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current - - -1.1 VSD Drain-Source Diode Forward Voltage - -0.8 -1.2 V trr Diode Reverse Recovery Time - 17 - ns Qrr Diode Reverse Recovery Charge - 6 - nC VGS = 0V, IS = -1.1 A (Note 2) IF= -3.0A, dIF/dt=100A/µs 2 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted VGS = -1.5V -2.0V 5 -ID, DRAIN CURRENT (A) 3 -2.5V VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 -3.5V -3.0V 4 -1.8V 3 2 -1.5V 1 2.2 1.8 -1.8V -2.0V 1.4 -2.5V 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 2.5 Figure 1. On-Region Characteristics 1.4 -3.5V -4.5V 2 3 4 -ID, DRAIN CURRENT (A) 5 6 0.28 RDS(ON), ON-RESISTANCE (OHM) 1.3 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage ID = -3.0A VGS = -4.5V 1.2 1.1 1 0.9 0.8 -50 ID = -1.5A 0.22 0.16 TA = 125oC 0.1 o TA = 25 C 0.04 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage Figure 3. On-Resistance Variation with Temperature 10 6 VDS = -5V -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 5 -ID, DRAIN CURRENT (A) -3.0V 1 0.6 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 4 3 TA = 125oC 2 o -55 C 1 25oC 0 0 0.5 1 1.5 2 1 0.1 TA = 125oC 0.01 25oC -55oC 0.001 0.0001 2.5 0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET Typical Characteristics 700 ID = -3.0A f = 1MHz VGS = 0 V 600 4 VDS = -5V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -15V 3 -10V 2 500 400 Ciss 300 200 Coss 1 100 Crss 0 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 Figure 7. Gate Charge Characteristics 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 8. Capacitance Characteristics ID, DRAIN CURRENT (A) 100 10 100us RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC 1 0.1 VGS = -4.5V SINGLE PULSE RθJA = 173oC/W TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 9. Maximum Safe Operation Area Figure 10. Single Pulse Maximum Power Dissipation Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 5 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET Typical Characteristics FDMA1027P Dual P-Channel PowerTrench® MOSFET FDMA1027P Rev. D (W) 6 The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 7 FDMA1027P Rev. D (W) FDMA1027P Dual P-Channel PowerTrench® MOSFET TRADEMARKS