t tm tm FDMA2002NZ Dual N-Channel PowerTrench® MOSFET General Description Features This device is designed specifically as a single package • 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V RDS(ON) = 140 mΩ @ VGS = 3.0 V solution for dual switching requirements in cellular handset and other ultra-portable applications. RDS(ON) = 163 mΩ @ VGS = 2.5 V It features two independent N-Channel MOSFETs with • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal • HBM ESD protection level = 1.8kV (Note 3) performance for its physical size and is well suited to • RoHS Compliant linear mode applications. PIN 1 S1 G1 D1 D2 D2 D1 G2 S2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol VDS Drain-Source Voltage TA=25oC unless otherwise noted Parameter Ratings Units V 30 VGS Gate-Source Voltage ±12 ID Drain Current – Continuous (TC = 25°C, VGS = 4.5V) 2.9 – Continuous (TC = 25°C, VGS = 2.5V) 2.7 – Pulsed 10 PD TJ, TSTG Power Dissipation for Single Operation (Note 1a) 1.5 Power Dissipation for Single Operation (Note 1b) 0.65 Operating and Storage Temperature –55 to +150 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 83 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 193 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 68 (Dual Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1d) 145 (Dual Operation) Package Marking and Ordering Information V A W °C °C/W Device Marking Device Reel Size Tape width Quantity 002 FDMA2002NZ 7’’ 8mm 3000 units ©2008 Fairchild Semiconductor Corporation FDMA2002NZ Rev B2 (W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET March 2008 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS RDS(on) 30 V Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA Gate–Body Leakage Current VGS = ± 12 V, VDS = 0 V ±10 µA 1.5 V On Characteristics VGS(th) ∆VGS(th) ∆TJ Min Typ Max Units Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics 0.4 1.0 mV/°C –3 mV/°C VGS = 4.5V, ID = 2.9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85°C VGS = 3.0V, ID = 2.7A, TC = 150°C VGS = 2.5V, ID = 2.5A, TC = 150°C 75 84 92 95 138 150 123 140 163 166 203 268 mΩ VDS = 15 V, f = 1.0 MHz 190 220 pF 30 40 pF 20 30 pF Dynamic Characteristics Ciss 25 V GS = 0 V, (Note 2) VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 12 21 ns tf Turn–Off Fall Time 2 10 ns 2.4 3.0 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 4.5 V ID = 2.9 A, 6 12 ns 8 16 ns nC 0.75 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IS = 2.0 A IS = 1.1 A IF = 2.9 A, dIF/dt = 100 A/µs nC 0.35 0.9 0.8 10 2 2.9 A 1.2 1.2 V ns nC FDMA2002NZ Rev B2 (W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Notes: 2 1. RθJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 83°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) RθJA = 193°C/W when mounted on a minimum pad of 2 oz copper (c) RθJA = 68°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (d) RθJA = 145°C/W when mounted on a minimum pad of 2 oz copper a) 83oC/W when mounted on a 1in2 pad of 2 oz copper b) 193oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3.The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDMA2002NZ Rev B2 (W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET Electrical Characteristics 1.8 10 ID, DRAIN CURRENT (A) 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V VGS = 4.5V 2.7V 3.5V 6 2.9V 2.0V 4 2 1.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 VGS = 2.0V 1.6 1.4 0 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 2 4 6 ID, DRAIN CURRENT (A) 8 10 ID = 1.45A 1 0.8 0.6 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 0.2 0.16 o TA = 125 C 0.12 0.08 o TA = 25 C 0.04 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 o TA = -55 C VGS = 0V o 125 C 8 -IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 4.0V 0.24 1.2 -25 3.5V Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 -50 2.9V 0.8 3 ID = 2.9A VGS = 4.5V 1.6 2.7V 1 Figure 1. On-Region Characteristics. 1.8 2.5V 1.2 25oC 6 4 2 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 10 1 0.1 o TA = 125 C 0.01 25oC -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA2002NZ Rev B2 (W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics FDMA2002NZ Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout rev3 FDMA2002NZ Rev B2 (W) The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * tm ® PDP-SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDMA2002NZ Rev B2 (W) FDMA2002NZ Dual N-Channel PowerTrench® MOSFET TRADEMARKS