FAIRCHILD FDMA2002NZ_08

t
tm
tm
FDMA2002NZ
Dual N-Channel PowerTrench® MOSFET
General Description
Features
This device is designed specifically as a single package
• 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V
RDS(ON) = 140 mΩ @ VGS = 3.0 V
solution for dual switching requirements in cellular
handset
and
other
ultra-portable
applications.
RDS(ON) = 163 mΩ @ VGS = 2.5 V
It
features two independent N-Channel MOSFETs with
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
low on-state resistance for minimum conduction losses.
The
MicroFET
2x2
offers
exceptional
thermal
• HBM ESD protection level = 1.8kV (Note 3)
performance for its physical size and is well suited to
• RoHS Compliant
linear mode applications.
PIN 1
S1 G1
D1
D2
D2
D1 G2 S2
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
MicroFET 2x2
Absolute Maximum Ratings
Symbol
VDS
Drain-Source Voltage
TA=25oC unless otherwise noted
Parameter
Ratings
Units
V
30
VGS
Gate-Source Voltage
±12
ID
Drain Current – Continuous (TC = 25°C, VGS = 4.5V)
2.9
– Continuous (TC = 25°C, VGS = 2.5V)
2.7
– Pulsed
10
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
1.5
Power Dissipation for Single Operation
(Note 1b)
0.65
Operating and Storage Temperature
–55 to +150
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
83 (Single Operation)
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
193 (Single Operation)
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
68 (Dual Operation)
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1d)
145 (Dual Operation)
Package Marking and Ordering Information
V
A
W
°C
°C/W
Device Marking
Device
Reel Size
Tape width
Quantity
002
FDMA2002NZ
7’’
8mm
3000 units
©2008 Fairchild Semiconductor Corporation
FDMA2002NZ Rev B2 (W)
FDMA2002NZ Dual N-Channel PowerTrench® MOSFET
March 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
RDS(on)
30
V
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 µA
VGS = 0 V,
ID = 250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
µA
Gate–Body Leakage Current
VGS = ± 12 V,
VDS = 0 V
±10
µA
1.5
V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Min Typ Max Units
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
0.4
1.0
mV/°C
–3
mV/°C
VGS = 4.5V, ID = 2.9A
VGS = 3.0V, ID = 2.7A
VGS = 2.5V, ID = 2.5A
VGS = 4.5V, ID = 2.9A, TC = 85°C
VGS = 3.0V, ID = 2.7A, TC = 150°C
VGS = 2.5V, ID = 2.5A, TC = 150°C
75
84
92
95
138
150
123
140
163
166
203
268
mΩ
VDS = 15 V,
f = 1.0 MHz
190
220
pF
30
40
pF
20
30
pF
Dynamic Characteristics
Ciss
25
V GS = 0 V,
(Note 2)
VDD = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
12
21
ns
tf
Turn–Off Fall Time
2
10
ns
2.4
3.0
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 4.5 V
ID = 2.9 A,
6
12
ns
8
16
ns
nC
0.75
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
IS = 2.0 A
IS = 1.1 A
IF = 2.9 A,
dIF/dt = 100 A/µs
nC
0.35
0.9
0.8
10
2
2.9
A
1.2
1.2
V
ns
nC
FDMA2002NZ Rev B2 (W)
FDMA2002NZ Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics
TA = 25°C unless otherwise noted
Notes:
2
1. RθJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is
determined by the user's board design.
(a) RθJA = 83°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b) RθJA = 193°C/W when mounted on a minimum pad of 2 oz copper
(c) RθJA = 68°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d) RθJA = 145°C/W when mounted on a minimum pad of 2 oz copper
a) 83oC/W when
mounted on a
1in2 pad of
2 oz copper
b) 193oC/W when
mounted on a
minimum pad of
2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
FDMA2002NZ Rev B2 (W)
FDMA2002NZ Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics
1.8
10
ID, DRAIN CURRENT (A)
8
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
VGS = 4.5V
2.7V
3.5V
6
2.9V
2.0V
4
2
1.5V
0
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
VGS = 2.0V
1.6
1.4
0
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
2
4
6
ID, DRAIN CURRENT (A)
8
10
ID = 1.45A
1
0.8
0.6
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
0.2
0.16
o
TA = 125 C
0.12
0.08
o
TA = 25 C
0.04
150
0
Figure 3. On-Resistance Variation with
Temperature.
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
100
o
TA = -55 C
VGS = 0V
o
125 C
8
-IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
0.24
1.2
-25
3.5V
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
-50
2.9V
0.8
3
ID = 2.9A
VGS = 4.5V
1.6
2.7V
1
Figure 1. On-Region Characteristics.
1.8
2.5V
1.2
25oC
6
4
2
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
10
1
0.1
o
TA = 125 C
0.01
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA2002NZ Rev B2 (W)
FDMA2002NZ Dual N-Channel PowerTrench® MOSFET
Typical Characteristics
FDMA2002NZ Dual N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
rev3
FDMA2002NZ Rev B2 (W)
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1.
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(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDMA2002NZ Rev B2 (W)
FDMA2002NZ Dual N-Channel PowerTrench® MOSFET
TRADEMARKS