® ASD™ AC Switch Family MAIN APPLICATIONS AC static switching in appliance control systems Drive of low power high inductive or resistive loads like - spray pump in dishwashers - fan in air-conditioners ■ ACST4 Series AC POWER SWITCH OUT ■ FEATURES ■ ■ ■ ■ ■ ■ ■ G COM DPAK ACST4-7SB/CB Blocking voltage : VDRM / VRRM = +/-700V Avalanche controlled : VCL typ = 1100 V Nominal conducting current : IT(RMS) = 4A High surge current capability: 30A for 20ms full wave Gate triggering current : IGT < 10 mA or 25mA Switch integrated driver High noise immunity : static dV/dt >500V/µs BENEFITS Enables equipment to meet IEC 61000-4-5 High off-state reliability with planar technology No external overvoltage protection needed Reduces the power component factor Interfaces directly with the microcontroller Direct interface with the microcontroller for the ACST4-7S (IGT < 10mA) G OUT COM TO-220FPAB ACST4-7SFP/CFP ■ ■ ■ ■ ■ ■ FUNCTIONAL DIAGRAM OUT DESCRIPTION The ACST4 belongs to the AC power switch family built around the ASD™ technology. This high performance device is adapted to home appliances or inductrial systems and drives loads up to 4 A. The ACS™ switch embeds a Triac structure with a high voltage clamping device to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC61000-4-5 standards. COM January 2003 - Ed: 3A G 1/9 ACST4 Series ABSOLUTE RATINGS (limiting values) For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage Symbol VDRM / VRRM IT(RMS) ITSM I2t Parameter Value Unit Tj = -10 °C 700 V DPAK Tc = 110 °C 4 A TO-220FPAB Tc = 100 °C 30 A Repetitive peak off-state voltage RMS on-state current full cycle sine wave 50 to 60 Hz Non repetitive surge peak on-state current Tj initial = 25°C, full cycle sine wave F =50 Hz F =60 Hz 33 A Fusing capability tp = 10ms 6.4 A²s F = 120 Hz 50 A/µs dI/dt Repetitive on-state current critical rate of rise IG = 10mA (tr < 100ns) VPP Non repetitive line peak pulse voltage Tstg Tj = 125°C note 1 2 kV Storage temperature range - 40 to + 150 °C Tj Operating junction temperature range - 30 to + 125 °C Tl Maximum lead soldering temperature during 10s 260 °C Value Unit Note 1: according to test described by IEC61000-4-5 standard & Figure B. GATE CHARACTERISTICS (maximum values) Symbol PG (AV) Parameter Average gate power dissipation 0.1 W PGM Peak gate power dissipation (tp = 20µs) 10 A IGM Peak gate current (tp = 20µs) 1 V THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Parameter Junction to ambient Junction to case for full cycle sine wave conduction S = Copper surface under Tab 2/9 Value Unit 70 °C/W TO-220FPAB 60 °C/W DPAK 2.6 °C/W TO-220FPAB 4.6 °C/W S = 0.5cm² DPAK ACST4 Series PARAMETER DESCRIPTION Parameter Symbol Parameter description IGT Triggering gate current VGT Triggering gate voltage VGD Non-triggering gate voltage IH Holding current IL Latching current VTM Peak on-state voltage drop VTO On state threshold voltage Rd On state dynamic resistance IDRM / IRRM Maximum forward or reverse leakage current dV/dt Critical rate of rise of off-state voltage (dV/dt)c Critical rate of rise of commutating off-state voltage (dI/dt)c Critical rate of decrease of commutating on-state current VCL Clamping voltage ICL Clamping current ELECTRICAL CHARACTERISTICS For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage. Symbol Test Conditions ACST4-7S ACST4-7C Unit IGT VOUT=12V (DC) RL=33Ω QI - QII - QIII Tj=25°C MAX 10 25 mA VGT VOUT=12V (DC) RL=33Ω QI - QII - QIII Tj=25°C MAX 1 1.1 V VGD VOUT=VDRM RL=3.3kΩ Tj=125°C MIN 0.2 V IH IOUT= 100mA gate open Tj=25°C MAX 20 35 mA IL IG= 2 x IGtmax Tj=25°C MAX 40 60 mA IOUT = 5.6A Tj=25°C MAX 1.5 V VTO Tj=125°C MAX 0.90 V Rd Tj=125°C MAX 100 mΩ Tj=25°C MAX 10 µA VTM tp=380µs IDRM / IRRM VOUT = 700V Tj=125°C MAX dV/dt VOUT=460V gate open Tj=110°C MIN 200 500 V/µs (dV/dt)c = 15V/µs Tj=125°C MIN 2.0 2.5 A/ms ICL = 1mA Tj=25°C TYP (dI/dt)c VCL tp=1ms 500 1100 V 3/9 ACST4 Series AC LINE SWITCH BASIC APPLICATION The ACST4 device has been designed to switch on & off low power, but highly inductive or resistive loads such as dishwashers spray pumps, and air-conditioners fan. Pin COM: Common drive reference to connect to the power line neutral Pin G: Switch Gate input to connect to the digital controller Pin OUT: Switch Output to connect to the load ACST4-7S triggering current has to be sunk from the gate pin G. The switch can then be driven directly by logic level circuits through a resistor as shown on the typical application diagram ( Fig A ). Thanks to its thermal and turn off commutation performances, the ACST4 switch is able to drive with no turn off additional snubber an inductive load up to 4 A. TYPICAL APPLICATION DIAGRAM (Fig. A) LOAD L L AC MAINS M R N OUT OUT ACST4 COM G ST72 MCU - Vcc AC LINE TRANSIENT VOLTAGE RUGGEDNESS The ACST4 switch is able to sustain safely the AC line transient voltages either by clamping the low energy spikes or by breaking over under high energy shocks, even with high turn-on current rises. The test circuit of the figure 2 is representative of the final ACST application and is also used to stress the ACST switch according to the IEC 61000-4-5 standard conditions. Thanks to the load, the ACST switch sustains the voltage spikes up to 2 kV above the peak line voltage. It will break over safely even on resistive load where the turn on current rate of rise, is as high as shown on figure 3. Such non-repetitive test can be done 10 times on each AC line voltage polarity. 4/9 ACST4 Series Fig. B: Overvoltage ruggedness test circuit for resistive and inductive loads according to IEC61000-4-5 standards. R = 150Ω, L = 10µH, VPP = 2kV. Fig. C: Current and Voltage of the ACST4 during IEC61000-4-5 standard test with R, L & VPP . L R OUT ACST4 SURGE VOLTAGE AC LINE & GENERATOR VAC + V PP G COM RG = 220Ω Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2-1: RMS on-state current versus case temperature. P(W) IT(RMS)(A) 5.0 4.5 DPAK α=180° 4.5 4.0 4.0 3.5 3.5 3.0 TO-220FPAB 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 180° 1.0 α α 0.5 0.5 IT(RMS)(A) 0.0 0.5 1.0 1.5 2.0 Tc(°C) α=180° 0.0 0.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 5/9 ACST4 Series Fig. 2-2: RMS on-state current versus ambient temperature. Fig. 3: Relative variation of thermal impedance versus pulse duration. IT(RMS)(A) K = [Zth/Rth] 2.0 1.00 α=180° Printed circuit board FR4 Natural convection S=0.5cm² 1.8 1.6 DPAK Zth(j-c) TO-220FPAB 1.4 1.2 DPAK Zth(j-a) 1.0 0.10 TO-220FPAB 0.8 0.6 0.4 0.2 Tamb(°C) tp(s) 0.0 0 25 50 75 100 125 0.01 1.E-02 Fig. 4: Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values). 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Fig. 5: Relative variation of static dV/dt versus junction temperature. dV/dt [Tj] / dV/dt [Tj = 125°C] IGT, IH, IL [Tj] / IGT, IH, IL [Tj = 25°C] 8 3.0 Vout=460V 7 2.5 IGT 6 2.0 5 4 1.5 3 1.0 IL & I H 2 0.5 1 Tj(°C) Tj(°C) 0 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 6-1: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values). 25 50 75 100 125 Fig. 6-2: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 1.2 1.2 Vout=300V Vout=300V 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 ACST4-7C ACST4-7S (dV/dt)c(V/µs) (dV/dt)c(V/µs) 0.0 0.0 0 6/9 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 45 50 ACST4 Series Fig. 7: Relative variation of critical rate of decrease of main current versus junction temperature. Fig. 8: Surge peak on-state current versus number of cycles. (dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C] ITSM(A) 6 35 Vout=300V 30 5 t=20ms Non repetitive Tj initial=25°C 25 4 20 3 15 2 Repetitive TC=100°C 10 1 5 Tj(°C) Number of cycles 0 0 25 50 75 100 125 Fig. 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 1 10 Fig. 10: values). On-state 100 1000 characteristics (maximum ITM(A) ITSM(A), I²t (A²s) 100.00 1000 Tj max. : Vto= 0.90 V Rd= 100 mΩ Tj initial=25°C dI/dt limitation: 50A/µs 10.00 100 ITSM Tj=125°C 10 1.00 I²t Tj=25°C VTM(V) tp(ms) 0.10 1 0.01 0.10 1.00 10.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm) Rth(j-a)(°C/W) 100 DPAK 90 80 70 60 50 40 30 20 10 S(cm²) 0 0 5 10 15 20 25 30 35 40 7/9 ACST4 Series ORDERING INFORMATION ACST 4 - 7 X X AC Switch IT(RMS) 4 = 4A Package B = DPAK FP = TO-220FPAB Gate Sensitivity S= 10mA C = 25mA VDRM 7 = 700V PACKAGE OUTLINE MECHANICAL DATA DPAK DIMENSIONS REF. Millimeters Min. Max Min. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 FOOT PRINT DPAK 6.7 6.7 3 3 1.6 1.6 2.3 8/9 2.3 Inches 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° ACST4 Series PACKAGE OUTLINE MECHANICAL DATA TO-220FPAB DIMENSIONS REF. B Dia L6 L2 Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 A H Millimeters B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L7 L3 L5 D F1 L4 L2 F2 F E G1 G 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 OTHER INFORMATION ■ Ordering type Marking Package Weight Base qty Delivery mode ACST4-7SB ACST47S DPAK 0.3 g 75 Tube ACST4-7SB-TR ACST47S DPAK 0.3 g 2500 Tape & reel ACST4-7SFP ACST47S TO-220FPAB 2.4 g 50 Tube ACST4-7CB ACST47C DPAK 0.3 g 75 Tube ACST4-7CB-TR ACST47C DPAK 0.3 g 2500 Tape & reel ACST4-7CFP ACST47C TO-220FPAB 2.4 g 50 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 9/9