STMICROELECTRONICS ACST4

ACST4
AC power switch
Main applications
■
AC static switching in appliance control
systems
■
Drive of low power high inductive or resistive
loads like
– spray pump in dishwashers
– an in air-conditioners
OUT
COM
Blocking voltage: VDRM /VRRM = ±700 V
■
Avalanche controlled: VCL typ = 1100 V
■
Nominal conducting current : IT(RMS) = 4 A
■
High surge current capability: 30 A for 20 ms
full wave
■
Gate triggering current: IGT < 10 mA or 25 mA
■
Switch integrated driver
■
High noise immunity: static dV/dt > 500 V/µs
Benefits
TO-220FPAB
ACST4-7SFP/CFP
DPAK
ACST4-7SB/CB
Features
■
G
OUT
COM
G
OUT
G
COM
OUT
IPAK
ACST4-7SH/CH
Figure 1.
Functional diagram
OUT
■
Enables equipment to meet IEC 61000-4-5
■
High off-state reliability with planar technology
■
No external overvoltage protection needed
■
Reduces the power component factor
■
Interfaces directly with the microcontroller
■
Direct interface with the microcontroller for the
ACST4-7S (IGT < 10 mA)
COM
Description
G
The ACST4 belongs to the AC power switch
family built around the ASD™ technology. This
high performance device is adapted to home
appliances or inductrial systems and drives loads
up to 4 A.
The ACS™ switch embeds a Triac structure with a
high voltage clamping device to absorb the
inductive turn-off energy and withstand line
transients such as those described in the
IEC 61000-4-5 standards.
TM: ASD and ACS are trademarks of STMicroelectronics.
July 2007
Rev 4
1/13
www.st.com
Characteristics
ACST4
1
Characteristics
Table 1.
Absolute ratings (limiting values)
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage
Symbol
Parameter
VDRM/VRRM
Repetitive peak off-state voltage
Tj = -10° C
RMS on-state current full cycle sine
wave 50 to 60 Hz
IT(RMS)
DPAK, IPAK
Tc = 110° C
Value
Unit
700
V
4
A
TO-220FPAB Tc = 100° C
Non repetitive surge peak on-state current
F = 50 Hz
30
A
Tj initial = 25° C, full cycle sine wave
F = 60 Hz
33
A
Fusing capability
tp = 10 ms
6.4
A2 s
dI/dt
Repetitive on-state current critical rate of
Tj = 125° C
rise IG = 10 mA (tr < 100 ns)
F = 120 Hz
50
A/μs
VPP
Non repetitive line peak pulse voltage(1)
2
kV
Tstg
Storage temperature range
- 40 to + 150
°C
Tj
Operating junction temperature range
- 30 to + 125
°C
Tl
Maximum lead soldering temperature during 10 s
260
°C
ITSM
2
It
1. according to test described by IEC 61000-4-5 standard and Figure 3.
Table 2.
Gate characteristics (maximum values)
Symbol
Value
Unit
Average gate power dissipation
0.1
W
PGM
Peak gate power dissipation (tp = 20 µs)
10
A
IGM
Peak gate current (tp = 20 µs)
1
V
Value
Unit
70
° C/W
TO-220FPAB
60
° C/W
DPAK, IPAK
2.6
° C/W
TO-220FPAB
4.6
° C/W
PG(AV)
Table 3.
Parameter
Thermal resistances
Symbol
Parameter
S(1) = 0.5 cm2
Rth (j-a)
Junction to ambient
Rth (j-l)
Junction to tab/lead for full cycle sine wave
conduction
1. S = Copper surface under Tab
2/13
DPAK, IPAK
ACST4
Characteristics
Table 4.
Parameter description
Parameter symbol
Parameter description
IGT
Triggering gate current
VGT
Triggering gate voltage
VGD
Non-triggering gate voltage
IH
Holding current
IL
Latching current
VTM
Peak on-state voltage drop
VTO
On state threshold voltage
Rd
On state dynamic resistance
IDRM / IRRM
dV/dt
Maximum forward or reverse leakage current
Critical rate of rise of off-state voltage
(dV/dt)c
Critical rate of rise of commutating off-state voltage
(dI/dt)c
Critical rate of decrease of commutating on-state current
Table 5.
VCL
Clamping voltage
ICL
Clamping current
Electrical characteristics
For either positive or negative polary of pin OUT voltage respect to pin COM voltage
Symbol
Test conditions
ACST4-7S
ACST4-7C
Unit
IGT
VOUT = 12 V DC
RL = 33 Ω
QI - QII - QIII Tj = 25° C
MAX
10
25
mA
VGT
VOUT = 12 V DC
RL = 33 Ω
QI - QII - QIII Tj = 25° C
MAX
1
1.1
V
VGD
VOUT = VDRM
RL = 3.3 Ω
Tj = 125° C
MIN
IH
IOUT = 100 mA
Gate open
Tj = 25° C
MAX
20
35
mA
IL
IG = 2 x IGtmax
Tj = 25° C
MAX
40
60
mA
Tj = 25° C
MAX
1.5
V
VTO
Tj = 125° C
MAX
0.90
V
Rd
Tj = 125° C
MAX
100
mΩ
Tj = 25° C
MAX
10
Tj = 125° C
MAX
500
Tj = 110° C
MIN
200
500
V/µs
Tj = 125° C
MIN
2.0
2.5
A/ms
Tj = 25° C
TYP
VTM
IOUT = 5.6 A
IDRM /
IRRM
VOUT = 700 V
dV/dt
VOUT = 460 V
(dI/dt)c
VCL
tp = 380 µs
V
µA
Gate open
(dI/dt)c = 15 V/ µs
ICL = 1mA
0.2
tp = 1ms
1100
V
3/13
AC line switch basic application
2
ACST4
AC line switch basic application
The ACST4 device has been designed to switch on and off low power, but highly inductive or
resistive loads such as dishwashers spray pumps, and air-conditioners fan.
■
Pin COM: Common drive reference to connect to the power line neutral
■
Pin G: Switch Gate input to connect to the digital controller
■
Pin OUT: Switch Output to connect to the load
ACST4-7S triggering current has to be sunk from the gate pin G. The switch can then be
driven directly by logic level circuits through a resistor as shown on the typical application
diagram .
Thanks to its thermal and turn off commutation performances, the ACST4 switch is able to
drive with no turn off additional snubber an inductive load up to 4 A.
Figure 2.
Typical application diagram
LOAD
L
L
AC
MAINS
M
R
N
OUT
OUT
ACST4
COM
G
ST72 MCU
- Vcc
4/13
ACST4
AC line transient voltage ruggedness
3
AC line transient voltage ruggedness
The ACST4 switch is able to sustain safely the AC line transient voltages either by clamping
the low energy spikes or by breaking over under high energy shocks, even with high turn-on
current rises.
The test circuit of the Figure 6. is representative of the final ACST application and is also
used to stress the ACST switch according to the IEC 61000-4-5 standard conditions. Thanks
to the load, the ACST switch sustains the voltage spikes up to 2 kV above the peak line
voltage. It will break over safely even on resistive load where the turn on current rate of rise,
is as high as shown on Figure 7. Such non-repetitive test can be done 10 times on each AC
line voltage polarity.
Figure 3.
Figure 4.
Overvoltage ruggedness test
circuit for resistive and inductive
loads according to IEC 61000-4-5
standards.
R = 150 Ω, L = 10 µH, VPP = 2 kV.
Current and voltage of the ACST4
during IEC 61000-4-5 standard test
with R, L and VPP.
L
R
OUT
ACST4
SURGE VOLTAGE
AC LINE & GENERATOR
VAC + V PP
G
COM
RG = 220Ω
Figure 5.
Maximum power dissipation versus Figure 6.
RMS on-state current.
P(W)
IT(RMS)(A)
5.0
4.5
α=180°
4.5
RMS on-state current versus case
temperature.
DPAK
IPAK
4.0
4.0
3.5
TO-220FPAB
3.5
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
180°
1.0
0.5
1.0
α
α
0.5
Tc(°C)
α=180°
IT(RMS)(A)
0.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
5/13
AC line transient voltage ruggedness
Figure 7.
ACST4
RMS on-state current versus
ambient temperature.
Figure 8.
Relative variation of thermal
impedance versus pulse duration.
K = [Zth/Rth]
IT(RMS)(A)
1.00
2.0
DPAK
IPAK
α=180°
Printed circuit board FR4
Natural convection
S=0.5cm²
1.8
1.6
Zth(j-c)
TO-220FPAB
1.4
1.2
DPAK
IPAK
1.0
Zth(j-a)
0.10
TO-220FPAB
0.8
0.6
0.4
0.2
tp(s)
Tamb(°C)
0.0
0.01
0
25
Figure 9.
50
75
100
125
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 10. Relative variation of static dV/dt
versus junction temperature.
Relative variation of gate trigger
current, holding current and
latching versus junction
temperature (typical values).
dV/dt [Tj] / dV/dt [Tj = 125°C]
IGT, IH, IL [Tj] / IGT, IH, IL [Tj = 25°C]
8
3.0
Vout=460V
7
2.5
IGT
6
2.0
5
1.5
4
3
1.0
IL & I H
2
0.5
1
Tj(°C)
0.0
Tj(°C)
0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 11. Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values).
25
50
75
100
125
Figure 12. Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
1.2
1.2
Vout=300V
Vout=300V
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
ACST4-7C
ACST4-7S
(dV/dt)c(V/µs)
(dV/dt)c(V/µs)
0.0
0.0
0
6/13
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
35
40
45
50
ACST4
AC line transient voltage ruggedness
Figure 13. Relative variation of critical rate of
decrease of main current versus
junction temperature.
Figure 14. Surge peak on-state current versus
number of cycles.
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
ITSM(A)
6
35
Vout=300V
30
5
t=20ms
Non repetitive
Tj initial=25°C
25
4
20
3
15
2
Repetitive
TC=100°C
10
1
5
Tj(°C)
Number of cycles
0
0
25
50
75
100
125
1
10
100
1000
Figure 15. Non repetitive surge peak on-state Figure 16. On-state characteristics (maximum
values).
current for a sinusoidal pulse with
width tp < 10 ms, and
corresponding value of I2t.
ITM(A)
ITSM(A), I²t (A²s)
100.00
1000
Tj initial=25°C
dI/dt limitation:
50A/µs
100
Tj max. :
Vto= 0.90 V
Rd= 100 mΩ
10.00
ITSM
Tj=125°C
10
1.00
I²t
Tj=25°C
tp(ms)
VTM(V)
1
0.10
0.01
0.10
1.00
10.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 17. Thermal resistance junction to
ambient versus copper surface
under tab (printed circuit board
FR4, copper thickness: 35 µm).
Rth(j-a)(°C/W)
100
DPAK
IPAK
90
80
70
60
50
40
30
20
10
S(cm²)
0
0
5
10
15
20
25
30
35
40
7/13
Ordering information scheme
4
ACST4
Ordering information scheme
Figure 18. Ordering information scheme
ACST 4 - 7
AC Switch series
Current
4 = 4 ARMS
Voltage
7 = 700 V
Gate sensitivity
S = 10 mA
C = 25 mA
Package
B = DPAK
H = IPAK
FP = TO-220FPAB
8/13
X
X
ACST4
5
Package information
Package information
●
Epoxy meets UL94, V0
●
Recommended torque values 0.4 to 0.6 Nm
Table 6.
DPAK dimensions
Dimensions
Ref.
E
A
B2
C2
L2
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
D
R
H
L4
A1
B
G
R
C
A2
0.60 MIN.
V2
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0°
8°
0°
8°
Figure 19. Footprint (dimensions in mm)
6.7
3
3
1.6
2.3
6.7
2.3
1.6
9/13
Package information
ACST4
Table 7.
IPAK dimensions
Dimensions
Ref.
Millimeters
Min.
A
E
C2
B2
L
Typ.
Max.
2.40 0.086
0.094
A1
0.90
1.10 0.035
0.043
A3
0.70
1.30 0.027
0.051
B
0.64
0.90 0.025
0.035
B2
5.20
5.40 0.204
0.212
0.95
0.037
0.30
0.035
C
0.45
0.60 0.017
0.023
C2
0.48
0.60 0.019
0.023
D
6
6.20 0.236
0.244
E
6.40
6.60 0.252
0.260
B3
L1
B
A1
V1
e
B5
e
G
2.28
0.090
C
A3
G
4.40
H
10/13
Min.
2.20
B5
D
Max.
A
B3
L2
H
Typ.
Inches
4.60 0.173
16.10
0.181
0.634
L
9
9.40 0.354
0.370
L1
0.8
1.20 0.031
0.047
L2
0.80
V1
10°
1
0.031 0.039
10°
ACST4
Package information
Table 8.
TO-220FPAB dimensions
Dimensions
Ref.
A
B
H
Dia
L6
L2
L7
L3
L5
F1
L4
F
G
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
D
F2
G1
Millimeters
L2
E
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
11/13
Ordering information
6
Ordering information
Table 9.
7
Ordering information
Part number
Marking
Package
Weight
Base qty
Packing mode
ACST4-7SB
ACST47S
DPAK
0.3 g
75
Tube
ACST4-7SB-TR
ACST47S
DPAK
0.3 g
2500
Tape and reel
ACST4-7SH
ACST47S
IPAK
0.4 g
75
Tube
ACST4-7SFP
ACST47S
TO-220FPAB
2.4 g
50
Tube
ACST4-7CB
ACST47C
DPAK
0.3 g
75
Tube
ACST4-7CB-TR
ACST47C
DPAK
0.3 g
2500
Tape and reel
ACST4-7CH
ACST47C
IPAK
0.4 g
75
Tube
ACST4-7CFP
ACST47C
TO-220FPAB
2.4 g
50
Tube
Revision history
Table 10.
12/13
ACST4
Revision history
Date
Revision
Jan-2003
3A
04-Jul-2007
4
Changes
Previous update
Reformatted to current standard. Added IPAK package
ACST4
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13/13