FDMC5614P P-Channel PowerTrench® MOSFET -60V, -13.5A, 100mΩ Features General Description Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A Low gate charge Fast switching speed Application High performance trench technology for extremely low rDS(on) High power and current handling capability Power management RoHS Compliant Load switch Battery protection Bottom Top Pin 1 S S S G D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25°C TC = 25°C -Continuous (Silicon limited) ID TA = 25°C -Continuous -Pulsed TC = 25°C Power Dissipation PD Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range TA = 25°C Ratings -60 Units V ±20 V -13.5 -14 (Note 1a) -5.7 A -23 42 (Note 1a) 2.1 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.0 (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking 5614P Device FDMC5614P ©2010 Fairchild Semiconductor Corporation FDMC5614P Rev.C2 Package Power 33 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC5614P P-Channel PowerTrench® MOSFET May 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient IGSS Gate to Source Leakage Current IDSS Zero Gate Voltage Drain Current ID = -250μA, VGS = 0V -60 ID = -250μA, referenced to 25°C V -54 VDS = -48V, VGS = 0V VGS = ±20V, VDS = 0V mV/°C -1 μA ±100 nA -3 V On Characteristics VGS(th) Gate to Source Threshold Voltage ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = -250μA -1 ID = -250μA, referenced to 25°C 4.7 VGS = -10V, ID = -5.7A VGS = -4.5V, ID = -4.4A VGS = -10V, ID = -5.7A , TJ = 125°C VDS = -15V, ID = -5.7A -1.95 mV/°C 84 100 108 135 140 168 11 mΩ S Dynamic Characteristics Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = -30V, VGS = 0V, f = 1MHz 795 1055 pF 140 185 pF 60 90 pF 10 21 ns 11 23 ns 32 65 ns Switching Characteristics td(on) Turn-On Delay Time td(off) Turn-Off Delay Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge tr Rise Time tf Fall Time VDD = -30V, ID = -1A VGS = -10V, RGEN = 6Ω 11 22 ns VGS = -10V VDD = -30V ID = -5.7A 15 20 nC 1.6 2.1 nC 2.7 3.5 nC VGS = 0V, IS = -3.2A -0.8 -1.2 V 36 ns 29 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time IF = -3.2A, di/dt = 100A/μs Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB. (b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper. b.135°C/W when mounted on a minimum pad of 2 oz copper a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDMC5614P Rev.C2 2 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 25 VGS = -10V VGS = -5V 20 VGS = -4.5V 15 VGS = -3.5V 10 VGS = -3.0V 5 0 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 2.0 1.6 VGS = -10V 1.0 0.8 0 5 10 15 -ID, DRAIN CURRENT(A) 350 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5V 1.2 ID = -5.7A VGS = -10V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VDD = -5V 20 15 10 TJ = 5 TJ = 25oC 125oC 1 2 3 4 5 200 PULSE DURATION =300μs DUTY CYCLE = 2.0%MAX TJ = 125oC 150 100 50 TJ = 25oC 2 30 10 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 VGS = 0V TJ = 125oC 1 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-4 0.2 6 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDMC5614P Rev.C2 25 250 1E-3 TJ =-55oC 0 20 Figure 4. On-Resistance vs Gate to Source Voltage 30 25 ID = -5.7A 300 Figure 3. Normalized On- Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) VGS = -5V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 0 VGS = -3.5V 1.4 Figure 1. On-Region Characteristics 1.8 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = -3.0V 1.8 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ID = -5.7A 1000 8 VDD = -20V 6 VDD = -30V 4 VDD = -40V 2 0 0 4 8 12 Qg, GATE CHARGE(nC) Ciss CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 2000 10 100 Crss 10 0.1 16 f = 1MHz VGS = 0V 8 7 6 5 60 4 TJ = 25oC 2 10 100us 1ms 10ms 100ms 0.1 0.01 TJ = 125oC rDS(on) LIMITED 1 1s 10s DC SINGLE PULSE TJ = MAX RATED o RθJA = 135 C/W TA = 25oC 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 1E-3 0.1 100 1 100 200 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area 1000 P(PK), PEAK TRANSIENT POWER (W) 60 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) Figure 7. Gate Charge Characteristics 3 Coss TA = 25oC VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 I = I25 150 – T A -----------------------125 10 1 0.5 -4 10 SINGLE PULSE o RθJA = 135 C/W -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDMC5614P Rev.C2 4 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: ZθJA (t) = r(t) x RθJA SINGLE PULSE RθJA = 135 °C/W Peak TJ = PDM x ZθJA (t) + TA Duty Cycle, D = t1 / t2 0.001 0.0005 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve FDMC5614P Rev.C2 5 www.fairchildsemi.com FDMC5614P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC5614P P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. 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