STMICROELECTRONICS BD139

BD135
BD139

NPN SILICON TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD135 and BD139 are silicon epitaxial
planar NPN transistors in Jedec SOT-32 plastic
package, designed for audio amplifiers and
drivers utilizing complementary or quasi
compementary circuits.
The complementary PNP types are BD136 and
BD140 respectively.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BD135
Uni t
BD139
V CBO
Collector-Base Voltage (IE = 0)
45
80
V
V CEO
Collector-Emitter Voltage (IB = 0)
45
80
V
V EBO
Emitter-Base Voltage (IC = 0)
IC
I CM
Collector Current
Collector Peak Current
5
V
1.5
A
3
A
Base Current
0.5
A
P t ot
Total Dissipation at Tc ≤ 25 o C
12.5
W
P t ot
Total Dissipation at Ta mb ≤ 25 C
Storage T emperature
IB
T stg
Tj
May 1999
o
Max. O perating Junction Temperature
1.25
W
-65 to 150
o
C
150
o
C
1/4
BD135 / BD139
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
10
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CBO
I EBO
Parameter
Collector Cut-off
Current (I E = 0)
V CB = 30 V
V CB = 30 V
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
V CE(sat )∗
Test Cond ition s
o
T C = 125 C
I C = 30 mA
for BD135
for BD139
Typ .
Max.
Un it
0.1
10
µA
µA
10
µA
45
80
V
V
Collector-Emitter
Saturation Voltage
I C = 0.5 A
IB = 0.05 A
V BE ∗
Base-Emitt er Voltage
I C = 0.5 A
VCE = 2 V
h F E∗
DC Current Gain
I C = 5 mA
I C = 0.5 A
I C = 150 mA
V CE = 2 V
VCE = 2 V
V CE = 2 V
25
25
40
250
I C = 150 mA
VCE = 2 V
for BD139 group 10
63
160
h FE
h FE Groups
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/4
Min.
0.5
V
1
V
BD135 / BD139
SOT-32 (TO-126) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
e3
2.2
4.15
F
G
H
0.087
4.65
0.163
3.8
3
0.183
0.150
3.2
0.118
2.54
0.126
0.100
H2
c1
0016114
3/4
BD135 / BD139
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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