BD135 BD139 NPN SILICON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary PNP types are BD136 and BD140 respectively. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BD135 Uni t BD139 V CBO Collector-Base Voltage (IE = 0) 45 80 V V CEO Collector-Emitter Voltage (IB = 0) 45 80 V V EBO Emitter-Base Voltage (IC = 0) IC I CM Collector Current Collector Peak Current 5 V 1.5 A 3 A Base Current 0.5 A P t ot Total Dissipation at Tc ≤ 25 o C 12.5 W P t ot Total Dissipation at Ta mb ≤ 25 C Storage T emperature IB T stg Tj May 1999 o Max. O perating Junction Temperature 1.25 W -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 10 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) V CB = 30 V V CB = 30 V Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ Test Cond ition s o T C = 125 C I C = 30 mA for BD135 for BD139 Typ . Max. Un it 0.1 10 µA µA 10 µA 45 80 V V Collector-Emitter Saturation Voltage I C = 0.5 A IB = 0.05 A V BE ∗ Base-Emitt er Voltage I C = 0.5 A VCE = 2 V h F E∗ DC Current Gain I C = 5 mA I C = 0.5 A I C = 150 mA V CE = 2 V VCE = 2 V V CE = 2 V 25 25 40 250 I C = 150 mA VCE = 2 V for BD139 group 10 63 160 h FE h FE Groups ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/4 Min. 0.5 V 1 V BD135 / BD139 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G H 0.087 4.65 0.163 3.8 3 0.183 0.150 3.2 0.118 2.54 0.126 0.100 H2 c1 0016114 3/4 BD135 / BD139 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4