12T Series

RoHS
12T Series RoHS
SEMICONDUCTOR
TRIACs, 12A
Snubberless, Logic Level and Standard
FEATURES
A2
Medium current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-220AB package
1
A1
A2
G
High commutation (4Q) or very high
commutation (3Q) capability
TO-220AB (non-Insulated)
(12TxxA)
12T series are UL certified (File ref: E320098)
2
3
TO-220AB (lnsulated)
(12TxxAI)
Packages are RoHS compliant
A2
APPLICATIONS
ON/OFF or phase angle function in applications
such as static relays, light dimmers and appliance
motors speed controllers.
A1 A2
G
TO-263 (D2PAK)
(12TxxH)
The snubberless versions (with suffix W) are
especially recommended for use on inductive loads,
because of their high commutation performances.
The 12T series provides an insulated tab (rated at
2500V RMS ).
TO-220F(ITO-220AB)
(12TxxAF)
2(A2)
3(G)
1(A1)
MAIN FEATURES
SYMBOL
VALUE
UNIT
I T(RMS)
12
A
V DRM /V RRM
600 to 1000
V
I GT(Q1)
5 to 50
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
SYMBOL
IT(RMS)
ITSM
TEST CONDITIONS
F =50 Hz
t = 20 ms
120
F =60 Hz
t = 16.7 ms
126
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
F =100 Hz
Peak gate current
IGM
T p =20 µs
PG(AV)
T j =125ºC
Operating junction temperature range
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A
Tc = 90ºC
t p = 10 ms
Storage temperature range
12
TO-220AB insulated/TO-220F (ITO-220AB)
2
Average gate power dissipation
UNIT
TO-263/TO-220AB
I t
I2t Value for fusing
VALUE
Tc = 105ºC
A
72
A2s
T j =125ºC
50
A/µs
T j =125ºC
4
A
1
W
Tstg
- 40 to + 150
Tj
- 40 to + 125
ºC
Page 1 of 7
RoHS
12T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
12Txxxx
SYMBOL
IGT(1)
QUADRANT
TEST CONDITIONS
V D = V DRM , R L = 3.3KΩ
T j = 125°C
IH(2)
I T = 100 mA
IL
I G = 1.2 I GT
(dI/dt)c(2)
CW
BW
05
10
35
50
I - II - III
MAX.
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.2
V
MAX.
I - III
dV/dt(2)
SW
mA
V D = 12 V, R L = 30Ω
VGT
VGD
Unit
TW
10
15
40
60
10
20
50
70
15
35
60
80
20
40
500
1000
3.5
6.5
-
-
1
2.9
-
-
-
-
6.5
12
mA
MAX.
II
V D = 67% V DRM , gate open ,T j = 125°C
MIN.
(dV/dt)c = 0.1 V/µs
T j = 125°C
(dV/dt)c = 10 V/µs
T j = 125°C
Without snubber
T j = 125°C
MIN.
mA
V/µs
A/ms
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
12Txxxx
TEST CONDITIONS
SYMBOL
IGT(1)
QUADRANT
I - II - III
V D = 12 V, R L = 30Ω
MAX.
IV
VGT
VGD
V D = V DRM , R L = 3.3KΩ, T j = 125°C
IH(2)
I T = 500 mA
IL
I G = 1.2 I GT
(dV/dt)c(2)
C
10
25
50
25
50
100
B
UNIT
mA
ALL
1.3
V
ALL
0.2
V
MAX.
I - III - IV
MAX.
II
dV/dt(2)
A
25
25
50
30
40
50
40
80
80
mA
mA
V D = 67% V DRM , gate open, T j = 125°C
MIN.
100
200
400
V/µs
(dI/dt)c = 5.3 A/ms, T j = 125°C
MIN.
3
5
10
V/µs
STATIC CHARACTERISTICS
SYMBOL
VTM(2)
TEST CONDITIONS
VALUE
UNIT
MAX.
1.55
V
T j = 125°C
MAX.
0.85
V
Dynamic resistance
T j = 125°C
MAX.
35
mΩ
VD = VDRM
VR = VRRM
T j = 25°C
5
µA
1
mA
I TM = 17 A, t P = 380 µs
T j = 25°C
Threshold voltage
R d (2)
IDRM
IRRM
Vt0
(2)
MAX.
T j = 125°C
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
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Page 2 of 7
RoHS
12T Series RoHS
SEMICONDUCTOR
THERMAL RESISTANCE
VALUE
UNIT
TO-220AB, TO-263
TO-220AB Insulated/TO-220F
1.4
2.3
°C/W
TO-263
45
TO-220AB Insulated, TO-220AB, TO-220F
60
SYMBOL
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
S = 1 cm 2
°C/W
S = Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE (x x)
PART NUMBER
SENSITIVITY
TYPE
V
50 mA
Standard
V
V
50 mA
Snubberless
V
V
V
25 mA
Standard
12TxxA-CW/12TxxAl-CW
V
V
V
35 mA
Snubberless
12TxxA-SW/12TxxAl-SW
V
V
V
10 mA
Logic level
12TxxA-TW/12TxxAI-TW
V
V
V
5 mA
Logic level
12TxxH -B
V
V
V
50 mA
Standard
12TxxH -C
V
V
V
25 mA
Standard
12TxxH -SW
V
V
V
10 mA
Logic level
12TxxH-CW
V
V
V
35 mA
Snubberless
12TxxH-BW
V
V
V
50 mA
Snubberless
12TxxH-TW
V
V
V
5 mA
Logic level
12TxxAF-B
V
V
V
50 mA
Standard
12TxxAF-C
V
V
V
25 mA
Standard
12TxxAF-BW
V
V
V
50 mA
Snubberless
TO-220F
(ITO-220AB)
600 V
800 V
1000 V
12TxxA-B/ 12TxxAl-B
V
V
12TxxA-BW/12TxxAl-BW
V
12TxxA-C/12TxxAl-C
PACKAGE
TO-220AB
D 2 PAK
12TxxAF-CW
V
V
V
35 mA
Snubberless
12TxxAF-SW
V
V
V
10 mA
Logic level
12TxxAF-TW
V
V
V
10 mA
Logic level
AI: Insulated TO-220AB package
ORDERING INFORMATION
ORDERING TYPE
MARKING
PACKAGE
WEIGHT
BASE Q,TY
DELIVERY MODE
12TxxA-yy
12TxxA-yy
TO-220AB
2.0g
50
Tube
12TxxAI-yy
12TxxAI-yy
TO-220AB (insulated)
2.3g
50
Tube
12TxxAF-yy
12TxxAF-yy
TO-220F(ITO-220AB)
2.5g
50
Tube
12TxxH-yy
12TxxH-yy
TO-236(D 2 PAK)
2.0g
50
Tube
Note: xx = voltage, yy = sensitivity
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Page 3 of 7
RoHS
12T Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
12 T 06
A - BW
Current
12 = 12A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
AF = TO-220F ( ITO-220AB, insulated)
H = TO-263 (D 2 PAK)
IGT Sensitivity
B = 50mA Standard
C = 25mA Standard
SW = 10mA Logic Level
BW = 50mA Snubberless
CW = 35mA Snubberless
TW = 5mA Logic Level
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
P (W)
IT(RMS) (A)
16
14
12
10
8
6
4
2
0
I T(RMS) (A)
0
1
Fig.2 RMS on-state current versus case temperature
(full cycle)
3
2
4
5
6
7
8
9
10
11
12
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
ITO-220AB
TO-220AB
( insulated )
TO-220AB
TO-263
T C (°C)
0
Fig.3 RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
25
75
50
100
125
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
IT(RMS) (A)
1E+0
3.5
Zth(j-c)
D 2 PAK
(S=1cm 2 )
3.0
2.5
Zth(j-a)
2.0
1E-1
1.5
1.0
0.5
0.0
Tc(°C)
0
25
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50
75
100
125
1E-2
1E-3
Page 4 of 7
tp(s)
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
RoHS
12T Series RoHS
SEMICONDUCTOR
Fig.5 On-state characteristics (maximum values).
I
100
Fig.6 Surge peak on-state current versus number
of cycles.
ITSM (A)
(A)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
Tj max.
Vto = 0.85 V
Rd = 35 mΩ
Tj=Tj max
Tj=25°C
10
VTM(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
t=20ms
Non repetitive
Tj initial=25°C
Repetitive
Tc=90°C
Number of cycles
10
1
5.0
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l 2 t.
One cycle
100
1000
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
l TSM (A), l 2 t(A 2 s)
l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C]
2.5
dI/dt limitation:
50A/µs
1000
Tj initial=25°C
2.0
IGT
I TSM
1.5
100
IH & IL
I2t
1.0
0.5
Tj(°C)
tp (ms)
10
0.01
0.10
1.00
10.00
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
0.0
-40
0
20
40
60
80
100
120
140
Fig.10 Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
2.8
4.5
2.4
4.0
2.0
SW
3.0
B
2.5
CW/BW
1.2
2.0
0.8
1.5
0.4
0.0
0.1
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TW
3.5
C
1.6
-20
1.0
(dV/dt)c (V/µs)
0.5
1.0
10.0
100.0
0.0
0.1
Page 5 of 7
(dV/dt)c (V/µs)
1.0
10.0
100.0
RoHS
12T Series RoHS
SEMICONDUCTOR
Fig.12 D 2 PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
Fig.11 Relative variation of critical rate of decrease
of main current versus junction temperature
(dI/dt)c [Tj] (dl/dt)c [Tj specified ]
R th(j-a) (°C/W)
80
6
70
5
60
4
50
D 2 PAK
40
3
30
2
20
S(cm2)
10
1
Tj(°C)
0
0
0
0
25
75
50
100
8
4
12
16
20
28
24
125
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
6.22 (0.245)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
2(A2)
2.79 (0.110)
3(G)
1(A1)
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Page 6 of 7
32
36
40
RoHS
12T Series RoHS
SEMICONDUCTOR
Case Style
ITO-220AB
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
0.48
0.44
2.54
TYP
2.85
2.65
4.8
4.6
2(A2)
3(G)
All dimensions in millimeters
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Page 7 of 7
1(A1)