BUV298AV NPN TRANSISTOR POWER MODULE ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL ■ SMPS & UPS ■ WELDING EQUIPMENT ■ Pin 4 not connected ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV Parameter Collector-Emitter Voltage (VBE = -5 V) VCEO(sus) Collector-Emitter Voltage (IB = 0) Unit 1000 V 450 V 7 V IC Collector Current 50 A ICM Collector Peak Current (t p = 10 ms) 75 A VEBO Emitter-Base Voltage (I C = 0) Value Base Current 10 A I BM Base Peak Current (t p = 10 ms) 16 A Pt ot Tot al Dissipation at T c = 25 o C 250 IB T stg Tj VI SO W -55 to 150 o Max. Ope rating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 o C Storage Temperature September 1997 C 1/7 BUV298AV THERMAL DATA R thj-ca se R t hc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.5 o C/W Max 0.05 o C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER Collecto r Cut-of f Current (RBE = 5 Ω) VCE = VCEV VCE = VCEV T j = 100 o C 0. 4 2 mA mA ICEV Collecto r Cut-of f Current (VBE = -5V) VCE = VCEV VCE = VCEV T j = 100 o C 0. 4 2 mA mA I EBO Emitter Cut-off Current VEB = 5 V (I C = 0) 2 mA VCEO(SUS) * Collecto r-Emitter Sustaining Voltage hFE ∗ I C = 0.2 A L = 25 mH Vc lamp = 450 V 450 V DC Current Gain I C = 32 A VCE = 5 V 12 V CE(sat )∗ Collecto r-Emitter Saturation Voltage I C = 32 A I C = 32 A IB = 6.4 A IB = 6.4 A T j = 100 oC 0.35 0.6 1. 2 2 V V VBE( sat) ∗ Base-Emitter Saturation Voltage I C = 32 A I C = 32 A IB = 6.4 A IB = 6.4 A T j = 100 oC 1 0.9 1. 5 1. 5 V V diC /dt Rate of Rise of On-state Collector VCC = 300 V RC = 0 tp = 3 µs I B1 = 9.6 A Tj = 100 o C 160 210 A/µs VCE (3 µs) Collecto r-Emitter Dynamic Voltage VCC = 300 V R C = 9.3 Ω I B1 = 9.6 A T j = 100 o C 4.5 8 V VCE (5 µs) Collecto r-Emitter Dynamic Voltage VCC = 300 V R C = 9.3 Ω I B1 = 9.6 A T j = 100 o C 2.5 4 V Storage Time Fall Time Cross-over Time I C = 32 A VBB = -5 V Vc lamp = 450 L = 78 µH 3.2 0.25 0.5 4. 5 0. 4 0. 7 µs µs µs Maximum Collector Emitter Voltage With ou t Snubber I CW off = 48 A I B1 = 6.4 A VBB = -5 V VCC = 50 V L = 52 µH RBB = 0.39 Ω T j = 125 o C ts tf tc VCEW ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 V CC RBB V Tj = = 50 V = 0.3 9 Ω I B1 = 6.4 A 100 oC 450 V BUV298AV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 BUV298AV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/7 BUV298AV Dc Current Gain Turn-on Switching Test Circuit (1) Fast electronics switch (2) Non-inductive load Turn-on Switching Waveforms Turn-off Switching Test Circuit (1) Fast electronic switch (3) Fast recovery rectifier Turn-off Switching Waveforms (2) Non-inductive load 5/7 BUV298AV ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 0.157 8.2 0.307 0.322 A G B O H J C K L M 6/7 F E D N BUV298AV Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 7/7