STMICROELECTRONICS ESM5045DV

ESM5045DV
®
NPN DARLINGTON POWER MODULE
■
■
■
■
■
■
■
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW Rth JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ULTRAFAST FREEWHEELING DIODE
FULLY INSULATED PACKAGE (UL
COMPLIANT)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
MOTOR CONTROL
■ SMPS & UPS
■ WELDING EQUIPMENT
■
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CEV
Parameter
Collector-Emitter Voltage (V BE = -5 V)
V CEO(sus) Collector-Emitter Voltage (I B = 0)
V EBO
IC
I CM
IB
Emitter-Base Voltage (I C = 0)
Value
Unit
600
V
450
V
7
V
Collector Current
60
A
Collector Peak Current (t p = 10 ms)
90
A
6
A
Base Current
I BM
Base Peak Current (t p = 10 ms)
12
A
P tot
Total Dissipation at T c = 25 o C
175
W
V isol
Insulation Withstand Voltage (RMS) from All
Four Terminals to Exernal Heatsink
Storage Temperature
2500
V
T stg
Tj
Max. Operating Junction Temperature
September 2003
-55 to 150
o
C
150
o
C
1/8
ESM5045DV
THERMAL DATA
R thj-case
R thj-case
R thc-h
Thermal Resistance Junction-case (transistor)
Thermal Resistance Junction-case (diode)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.71
1.2
o
Max
0.05
o
o
C/W
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I CER #
Collector Cut-off
Current (R BE = 5 Ω)
V CE = V CEV
V CE = V CEV
T j = 100 o C
1.5
20
mA
mA
I CEV #
Collector Cut-off
Current (V BE = -5)
V CE = V CEV
V CE = V CEV
T j = 100 o C
1
13
mA
mA
I EBO #
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
1
mA
V CEO(SUS) * Collector-Emitter
Sustaining Voltage
(I B = 0)
h FE ∗
V CE(sat) ∗
V BE(sat) ∗
I C = 0.2 A
L = 25 mH
V clamp = 450 V
DC Current Gain
I C = 50 A
V CE = 5 V
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
IB
IB
IB
IB
=
=
=
=
35
35
50
50
A
A
A
A
=
=
=
=
0.7
0.7
2.8
2.8
A
A
A
A
I B = 2.8 A
I B = 2.8 A
450
V
150
T j = 100 o C
1.2
1.4
1.4
1.6
T j = 100 o C
2.3
2.3
T j = 100 o C
2
V
V
V
V
3
V
V
2
Base-Emitter
Saturation Voltage
I C = 50 A
I C = 50 A
di C /dt
Rate of Rise of
On-state Collector
V CC = 300 V R C = 0
t p = 3 µs
I B1 = 1.05 A T j = 100 o C
V CE (3
µs)••
Collector-Emitter
Dynamic Voltage
V CC = 300 V R C = 8.5 Ω
I B1 = 1.05 A T j = 100 o C
4.5
8
V
V CE (5
µs)••
Collector-Emitter
Dynamic Voltage
V CC = 300 V R C = 8.5 Ω
I B1 = 1.05 A T j = 100 o C
2.5
4.5
V
ts
tf
tc
Storage Time
Fall Time
Cross-over Time
I C = 35A
VCC = 50 V
R BB = 0.6 Ω
V BB = -5 V
V clamp = 450 V I B1 = 0.7 A
L = 0.07 mH T j = 100 o C
3.2
0.25
0.75
5
0.5
1.5
µs
µs
µs
Maximum Collector
Emitter Voltage
Without Snubber
I CWoff = 60 A I B1 = 2.8 A
V BB = -5 V V CC = 50 V
L = 42 µH R BB = 0.6 Ω
T j = 125 o C
VF∗
Diode Forward Voltage
I F = 50 A
I RM
Reverse Recovery
Current
V CC = 200 V I F = 50 A
di F /dt = -300 A/µs L < 0.05 µH
T j = 100 o C
V CEW
T j = 100 o C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
To evaluate the conduction losses of the diode use the following equations:
P = 1.5 IF(AV) + 0.0055 I2F(RMS)
VF = 1.5 + 0.0055 IF
# See test circuits in databook introduction
2/8
Min.
300
400
A/µs
450
V
1.5
1.8
V
32
38
A
ESM5045DV
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector-emitter Voltage Versus
base-emitter Resistance
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/8
ESM5045DV
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
Switching Times Inductive Load Versus
Temperature
4/8
ESM5045DV
Dc Current Gain
Typical VF Versus IF
Peak Reverse Current Versus diF/dt
Turn-on Switching Test Circuit
Turn-on Switching Waveforms
5/8
ESM5045DV
Turn-on Switching Test Circuit
Turn-off Switching Waveforms
Turn-off Switching Test Circuit of Diode
Turn-off Switching Waveform of Diode
6/8
ESM5045DV
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.465
0.480
A1
8.9
9.1
0.350
0.358
B
7.8
8.2
0.307
0.322
C
0.75
0.85
0.029
0.033
C2
1.95
2.05
0.076
0.080
D
37.8
38.2
1.488
1.503
D1
31.5
31.7
1.240
1.248
E
25.15
25.5
0.990
1.003
E1
23.85
24.15
0.938
0.950
E2
24.8
0.976
G
14.9
15.1
0.586
0.594
G1
12.6
12.8
0.496
0.503
G2
3.5
4.3
0.137
1.169
F
4.1
4.3
0.161
0.169
F1
4.6
5
0.181
0.196
P
4
4.3
0.157
0.169
P1
4
4.4
0.157
0.173
S
30.1
30.3
1.185
1.193
P093A
7/8
ESM5045DV
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
8/8