STMICROELECTRONICS 2N2907A

2N2905A
2N2907A
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905A and 2N2907A are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated switching and general purpose
applications.
2N2905A approved to CECC 50002-100,
2N2906A approved to CECC 50002-103
available on request.
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CBO
Collector-Base Voltage (IE = 0)
-60
V
V CEO
Collector-Emitter Voltage (I B = 0)
-60
V
V EBO
Emitter-Base Voltage (I C = 0)
-5
V
-0.6
A
0.6
0.4
W
W
3
1.8
W
W
IC
P t ot
T stg
Tj
Parameter
Collector Current
o
Total Dissipation at T amb ≤ 25 C
for 2N2905A
for 2N2907A
at T case ≤ 25 o C
for 2N2905A
for 2N2907A
St orage Temperature
Max. Operating Junction Temperature
November 1997
-65 to 200
o
C
200
o
C
1/7
2N2905A/2N2907A
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
T O-39
TO -18
58.3
292
97.3
437.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CBO
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
-10
-10
nA
µA
Collector Cut-off
Current (IE = 0)
V CB = -50 V
V CB = -50 V
I CEX
Collector Cut-off
Current (V BE = -0.5V)
V CE = -30 V
-50
nA
I BEX
Base Cut-off Current
(V BE = -0.5V)
V CE = -30 V
-50
nA
o
Tc ase = 150 C
V ( BR)CBO ∗ Collector-Base
Breakdown Voltage
(I E = 0)
I C = -10 µA
-60
V
V ( BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = -10 mA
-60
V
V (BR)EBO ∗ Emitter-Base
Breakdown Voltage
(I C = 0)
I E = -10 µA
-5
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = -150 mA
I C = -500 mA
IB = -15 mA
IB = -50 mA
-0.4
-1.6
V
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = -150 mA
I C = -500 mA
IB = -15 mA
IB = -50 mA
-1.3
-2.6
V
V
DC Current G ain
IC
IC
IC
IC
IC
V CE
V CE
V CE
V CE
V CE
hFE∗
fT
-0.1 mA
-1 mA
-10 mA
-150 mA
-500 mA
= -10 V
= -10 V
= -10 V
= -10 V
= -10 V
Transition F requency
V CE = -50 V
I C = -20 mA
C EBO
Emitter Base
Capacitance
IC = 0
V EB = -2 V
f = 100 MHz
C CBO
Collector Base
Capacitance
IE = 0
V CB = -10 V
t d ∗∗
Delay Time
V CC = -30 V
I B1 = -15 mA
t r ∗∗
Rise Time
V CC = -30 V
I B1 = -15 mA
t s∗∗
t f ∗∗
f = 1MHz
75
100
100
100
50
300
200
MHz
30
pF
8
pF
I C = -150 mA
10
ns
I C = -150 mA
40
ns
Storage Time
V CC = -6 V
I C = -150 mA
I B1 = -IB2 = -15 mA
80
ns
Fall T ime
V CC = -6 V
I C = -150 mA
I B1 = -IB2 = -15 mA
30
ns
t on∗∗
Turn-on T ime
V CC = -30 V
I B1 = -15 mA
I C = -150 mA
45
ns
t off ∗∗
Turn-off T ime
V CC = -6 V
I C = -150 mA
I B1 = -IB2 = -15 mA
100
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
∗∗ See test circuit
2/7
=
=
=
=
=
f = 1MHz
2N2905A/2N2907A
Normalized DC Current Gain.
Collector-emitter Saturation Voltage.
Collector-base and Emitter-base capacitances.
Switching Characteristics.
3/7
2N2905A/2N2907A
Test Circuit for ton, tr, td.
PULSE GENERATOR :
tr ≤ 2.0 ms
Frequency = 150 Hz
Zo = 50 Ω
TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 10 MΩ
Test Circuit for toff, to, tf.
PULSE GENERATOR :
tr ≤ 2.0 ns
Frequency = 150 Hz
Zo = 50 Ω
4/7
TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 100 MΩ
2N2905A/2N2907A
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
A
G
I
E
F
H
B
L
C
0016043
5/7
2N2905A/2N2907A
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
A
G
I
E
F
H
B
L
P008B
6/7
2N2905A/2N2907A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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