BUT30V ® NPN TRANSISTOR POWER MODULE ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS: MOTOR CONTROL ■ SMPS & UPS ■ WELDING EQUIPMENT ■ Pin 4 not connected ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO(sus) V EBO IC I CM IB I BM P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = -5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Four Terminals to External Heatsink Storage Temperature Max. Operating Junction Temperature February 2003 Value 200 125 7 100 150 20 30 250 2500 -55 to 150 150 Unit V V V A A A A W o o C C 1/7 BUT30V THERMAL DATA R thj-case R thc-h Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.5 o C/W 0.05 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CER Collector Cut-off Current (R BE = 5 Ω) V CE = V CEV V CE = V CEV T c = 100 o C I CEV Collector Cut-off Current (V BE = -5V) V CE = V CEV V CE = V CEV T c = 100 C Emitter Cut-off Current (I C = 0) V EB = 5 V I EBO VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) h FE ∗ Min. Typ. o I C = 0.2 A L = 25 mH V clamp = 125 V Max. Unit 1 5 mA mA 1 4 mA mA 1 mA 125 V DC Current Gain I C = 100 A VCE = 5 V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC = = = = 50 A 50 A 100 A 100 A IB IB IB IB = = = = 2.5 A o 2.5 A T c = 100 C 10 A 10 A T c = 100 o C 0.45 0.55 0.7 0.9 0.9 1.2 0.9 1.5 V V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC IC IC IC = = = = 50 A 50 A 100 A 100 A IB IB IB IB = = = = 2.5 A 2.5 A T c = 100 o C 10 A 10 A T c = 100 o C 1.15 1.1 1.45 1.55 1.4 1.4 1.8 1.9 V V V V di C /dt Rate of Rise of On-state Collector V CC = 300 V I B1 = 15 A RC = 0 tp = 3 µs T c = 100 o C 27 270 350 A/µs V CE (3 µs) Collector-Emitter Dynamic Voltage V CC = 300 V I B1 = 15 A RC = 1 Ω T c = 100 o C 2.7 3.5 V VCE (5 µs) Collector-Emitter Dynamic Voltage V CC = 300 V I B1 = 15 A RC = 1 Ω T c = 100 o C 2 2.5 V 1 0.1 0.2 2 0.2 0.35 µs µs µs ts tf tc V CEW Storage Time Fall Time Cross-over Time I C = 100 A V CC = 90 V R BB = 0.47 Ω V BB = -5 V V clamp = 125 V I B1 = 10 A o L = 45 µH T c = 100 C Maximum Collector Emitter Voltage Without Snubber I CWoff = 150 A V BB = -5 V L = 30 µH T c = 125 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 I B1 = 10 A V CC = 90 V R BB = 0.5 Ω 125 V BUT30V Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus Base Emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 BUT30V Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/7 BUT30V Dc Current Gain Turn-on Switching Test Circuit (1) Fast electronic switch (2) Non-inductive load Turn-on Switching Waveforms Turn-off Switching Test Circuit (1) Fast electronic switch (3) Fast recovery rectifier Turn-off Switching Waveforms (2) Non-inductive load 5/7 BUT30V ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.465 0.480 A1 8.9 9.1 0.350 0.358 B 7.8 8.2 0.307 0.322 C 0.75 0.85 0.029 0.033 C2 1.95 2.05 0.076 0.080 D 37.8 38.2 1.488 1.503 D1 31.5 31.7 1.240 1.248 E 25.15 25.5 0.990 1.003 E1 23.85 24.15 0.938 0.950 E2 24.8 0.976 G 14.9 15.1 0.586 0.594 G1 12.6 12.8 0.496 0.503 G2 3.5 4.3 0.137 1.169 F 4.1 4.3 0.161 0.169 F1 4.6 5 0.181 0.196 P 4 4.3 0.157 0.169 P1 4 4.4 0.157 0.173 S 30.1 30.3 1.185 1.193 P093A 6/7 BUT30V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7