STMICROELECTRONICS BUZ72A

BUZ72A
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
BUZ72A
■
■
■
■
■
■
■
V DSS
R DS( on)
ID
100 V
< 0.25 Ω
11 A
TYPICAL RDS(on) = 0.23 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATURE
3
1
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SOLENOID AND RELAY DRIVERS
■
REGULATORS
■
DC-DC & DC-AC CONVERTERS
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VD S
V DG R
V GS
ID
I DM
Parameter
Value
Unit
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
Gate-source Voltage
± 20
V
Drain Current (continuous) at T c = 25 C
11
A
Drain Current (pulsed)
44
A
Drain-source Voltage (V GS = 0)
o
o
P tot
Total Dissipation at Tc = 25 C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
DIN Humidity Category (DIN 40040)
IEC Climatic Category (DIN IEC 68-1)
June 1993
70
W
-65 to 175
o
C
175
o
C
E
55/150/56
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BUZ72A
THERMAL DATA
R thj-cas e
Rthj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
2.14
62.5
o
C/W
C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
IA R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
11
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, ID = I AR, VD D = 25 V)
36
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
9
mJ
IA R
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
7
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V( BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
VG S = 0
I DS S
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IG SS
Gate-body Leakage
Current (V D S = 0)
Min.
Typ.
Max.
100
Unit
V
Tj = 125 oC
V GS = ± 20 V
250
1000
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V G S(th)
Gate Threshold Voltage V DS = V GS
R DS( on)
Static Drain-source On
Resistance
ID = 250 µA
V GS = 10 V
Min.
Typ.
Max.
Unit
2
2.9
4
V
0.23
0.25
Ω
Min.
Typ.
Max.
Unit
2.7
4.5
ID = 5 A
DYNAMIC
Symbol
gfs (∗)
C iss
C oss
C rss
Parameter
Test Conditions
Forward
Transconductance
V DS = 25 V
ID = 5 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
VG S = 0
S
330
90
25
450
120
40
pF
pF
pF
Typ.
Max.
Unit
10
50
25
20
15
75
40
30
ns
ns
ns
ns
SWITCHING
Symbol
t d(on)
tr
t d(off )
tf
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Parameter
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V DD = 50 V
R GS = 4.7 Ω
I D = 5.5 A
V GS = 10 V
Min.
BUZ72A
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I SD M
Source-drain Current
Source-drain Current
(pulsed)
V S D (∗)
Forward On Voltage
I SD = 22 A
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 11 A
V DD = 20 V
IS D
t rr
Q rr
Min.
Typ.
VG S = 0
di/dt = 100 A/µs
T j = 150 o C
Max.
Unit
11
44
A
A
1.6
V
80
ns
0.22
µC
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
Derating Curve
Output Characteristics
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BUZ72A
Transfer Characteristics
Transconductance
Static Drain-Source On Resistance
Maximum Drain Current vs Temperature
Gate Charge vs Gate-Source Voltage
Capacitance Variation
4/7
BUZ72A
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-Drain Diode Forward Characteristics
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BUZ72A
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
3.5
3.93
0.137
0.154
3.75
3.85
0.147
0.151
D1
C
D
A
E
L9
DIA.
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
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BUZ72A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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