STMICROELECTRONICS STP19N06L

STP19N06L
STP19N06LFI
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
STP19N06L
STP19N06LFI
■
■
■
■
■
■
■
■
VDSS
R DS(on)
ID
60 V
60 V
< 0.1 Ω
< 0.1 Ω
19 A
13 A
TYPICAL RDS(on) = 0.085 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
LOGIC LEVEL COMPATIBLE INPUT
175 oC OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
3
2
1
TO-220
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SOLENOID AND RELAY DRIVERS
■
REGULATORS
■
DC-DC & DC-AC CONVERTERS
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
2
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP19N06L
V DS
V DGR
V GS
Unit
STP19N06LFI
Drain-source Voltage (V GS = 0)
60
V
Drain- gate Voltage (R GS = 20 kΩ)
60
V
± 15
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
19
13
A
ID
Drain Current (continuous) at T c = 100 o C
13
9
A
Drain Current (pulsed)
76
76
A
80
35
W
0.53
0.23
W/o C

2000
I DM (•)
P tot
o
Total Dissipation at T c = 25 C
Derating Factor
V ISO
T stg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
V
-65 to 175
o
C
175
o
C
(•) Pulse width limited by safe operating area
February 1995
1/7
STP19N06L/FI
THERMAL DATA
R thj-case
R thj-amb
R t hc-sink
Tl
Thermal Resistance Junction-case
TO-220
ISOWATT220
1.88
4.29
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
C/W
62.5
0.5
300
o
C/W
C/W
o
C
Max Value
Unit
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IA R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
19
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 25 V)
76
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
19
mJ
IA R
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
13
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
VGS = 0
I DS S
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
I GSS
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
60
Unit
V
T c = 125 o C
V GS = ± 15 V
250
1000
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
I D(on)
I D = 250 µA
V GS = 5 V I D = 9.5 A
V GS = 5 V I D = 9.5 A
Min.
Typ.
Max.
Unit
1
1.7
2.5
V
0.085
0.1
0.2
Ω
Ω
T c = 100o C
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
19
A
DYNAMIC
Symbol
gfs (∗)
C iss
C oss
C rss
2/7
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
I D = 9.5 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
VGS = 0
f = 1 MHz
Min.
Typ.
7
9
700
230
80
Max.
Unit
S
900
300
100
pF
pF
pF
STP19N06L/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
21
230
ns
ns
Turn-on Time
Rise Time
V DD = 30 V
ID = 9.5 A
R G = 4.7 Ω
V GS = 5 V
(see test circuit, figure 3)
15
165
Turn-on Current Slope
V DD = 40 V
ID = 19 A
R G = 47 Ω
VGS = 5 V
(see test circuit, figure 5)
70
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 40 V
18
7
9
26
nC
nC
nC
Typ.
Max.
Unit
50
95
165
70
135
230
ns
ns
ns
Typ.
Max.
Unit
19
76
A
A
1.6
V
ID = 19 A
V GS = 5 V
A/µs
SWITCHING OFF
Symbol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 40 V ID = 19 A
R G = 47 Ω
VGS = 5 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
IS D
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VS D (∗)
Forward On Voltage
I SD = 19 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 19 A
di/dt = 100 A/µs
V DD = 30 V
T j = 150 o C
(see test circuit, figure 5)
t rr
Q rr
I RRM
Min.
V GS = 0
60
ns
0.13
µC
4.6
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/7
STP19N06L/FI
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
4/7
STP19N06L/FI
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
5/7
STP19N06L/FI
ISOWATT220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
Ø
F
F1
L7
1 2 3
L2
6/7
L4
P011G
STP19N06L/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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