FJP3305 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Regulator 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted Parameter Value Units V CBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 9 V IC Collector Current (DC) 4 A ICP Collector Current (Pulse) 8 A IB Base Current 2 A PC Collector Dissipation (TC = 25°C) 75 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C © 2007 Fairchild Semiconductor Corporation FJP3305 Rev. 1.0.0 www.fairchildsemi.com 1 FJP3305 — High Voltage Fast-Switching NPN Power Transistor October 2008 Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BV CBO Collector-Base Breakdwon Voltage IC = 500mA, IE = 0 700 V BV CEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BV EBO Emitter-Base Breakdown Voltage IE = 500mA, IC = 0 9 V ICBO Collector Cut-off Current VCB = 700V, IE = 0 1 mA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 1 mA hFE1 hFE2 DC Current Gain * VCE = 5V, IC = 1A VCE = 5V, IC = 2A V CE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A 0.5 0.6 1.0 V V V V BE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A 1.2 1.6 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A C ob Output Capacitance VCB = 10V, f = 1MHz tON Turn On Time tSTG Storge Time tF Fall Time VCC = 125V, IC = 2A IB1 = -IB2 = 0.4A RL = 62.5W 19 8 35 40 4 MHz 65 pF 0.8 ms 4.0 ms 0.9 ms * Pulse Test: PW £ 300ms, Duty Cycle £ 2% hFE Classification Classification H1 H2 hFE1 19 ~ 28 26 ~ 35 © 2007 Fairchild Semiconductor Corporation FJP3305 Rev. 1.0.0 www.fairchildsemi.com 2 FJP3305 — High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain (R-Grade) 100 5.0 VCE = 5V 4.5 IC [A], COLLECTOR CURRENT O 4.0 IB = 300mA hFE, DC CURRENT GAIN 3.5 3.0 2.5 IB = 100mA 2.0 1.5 Ta = 75 C O IB = 50mA 1.0 Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 3. DC Current Gain (O-Grade) 10 VCE(sat) [V], SATURATION VOLTAGE VCE = 5V O O Ta = 75 C hFE, DC CURRENT GAIN Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 1 0.01 0.1 1 IC = 4 IB O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.01 0.01 10 0.1 Figure 5. Saturatin Voltage (O-Grade) 10 Figure 6. Saturation Voltage (R-Grade) 10 10 IC = 4 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CUTRRENT O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.1 1 IC = 4 IB O 1 Ta = 25 C O Ta = - 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 10 IC [A], COLLECTOR CURRENT 0.1 1 10 IC [A], COLLECTOR CURRENT © 2007 Fairchild Semiconductor Corporation FJP3305 Rev. 1.0.0 10 Figure 4. Saturation Voltage (R-Grade) 100 0.01 0.01 1 IC [A], COLLECTOR CUTRRENT VCE [V], COLLECTOR-EMITTER VOLTAGE www.fairchildsemi.com 3 FJP3305 — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) Figure 7. Saturation Voltage (O-Grade) Figure 8. Switching Time 10 10 tF & tSTG [ms], SWITCHING TIME VCE(sat) [V], SATURATION VOLTAGE IC = 4 IB O O 1 Ta = - 25 C Ta = 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 0.1 1 tSTG 1 tF 0.1 IB1 = - IB2 = 0.4A VCC = 125V 0.01 0.1 10 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 10 IB1=2A, RB2=0 1 0.1 O TC = 25 C Single Pulse 0.01 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 500m s 5ms IC (DC) VCC=50V, L=1mH 1 10 1ms IC (Pulse) 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 11. Power Derating 100 PC[W], POWER DISSIPATION 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE © 2007 Fairchild Semiconductor Corporation FJP3305 Rev. 1.0.0 www.fairchildsemi.com 4 FJP3305 — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics FJP3305 — High Voltage Fast-Switching NPN Power Transistor Package Dimension Dimensions in Millimeters © 2007 Fairchild Semiconductor Corporation FJP3305 Rev. 1.0.0 www.fairchildsemi.com 5 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation FJP3305 Rev. A1 www.fairchildsemi.com 6 FJP3305 High Voltage Fast-Switching NPN Power Transistor TRADEMARKS