FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit C B 1 I-PACK 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol E TC = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 4 A ICP * Collector Current (Pulse) 8 A IB Base Current (DC) 2 A IBP * Base Current (Pulse) 4 A PC Collector Dissipation (TC = 25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity J5304D FJU5304DTU I-PAK - - 75 ©2005 Fairchild Semiconductor Corporation FJU5304D Rev. A 1 www.fairchildsemi.com Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V ICES Collector Cut-off Current VCB = 700V, IE = 0 100 µA ICEO Collector Cut-off Current VCB = 400V, IB = 0 250 µA IEBO Emitter Cut-off Current VEB = 12V, IC = 0 1 mA hFE DC Current Gain VCE = 5V, IC = 10mA VCE = 5V, IC = 2.0A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 0.7 V IC = 1.0A, IB = 0.2A 1.0 V IC = 2.5A, IB = 0.5A 1.5 V IC = 0.5A, IB = 0.1A 1.1 V IC = 1.0A, IB = 0.2A 1.2 V VBE(sat) Base-Emitter Saturation Voltage 10 8 40 IC = 2.5A, IB = 0.5A tSTG Storage Time tF Fall Time tSTG Storage Time tF Fall Time FJU5304D Rev. A VCLAMP=200V, IC=2.0A IB1=0.4A, VBE(off)=-5V, L=200µH VCC=250V, IC=2.0A IB1=0.4A, IB2=-0.4A, TP=30µs 2 1.3 µs 0.1 2.9 0.2 V µs 0.6 µs µs www.fairchildsemi.com FJU5304D High Voltage Fast Switching Transistor Electrical Characteristics Figure 1. Static Characterstic Figure 2. DC Current Gain 4.0 100 IB=300mA o hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 3.5 3.0 IB=150mA 2.5 IB=100mA 2.0 IB=50mA 1.5 1.0 TC=125 C o TC= - 25 C o TC=25 C 10 0.5 0.0 0 2 4 6 8 10 1 0.01 12 0.1 VCE [V]. COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 IC = 5 IB o TC=125 C 1 o TC=25 C o TC= - 25 C 0.1 0.01 0.01 0.1 1 IC = 5 IB o TC= - 25 C 1 0.1 0.01 10 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time Figure 6. Forward Biased Safe Operating Area 10 100 tSTG IC [A], COLLECTOR CURRENT tSTG & tF [µs], SWITCHING TIME o TC=25 C o TC=125 C IC [A], COLLECTOR CURRENT 1 tF 0.1 VCC=250V Pulse IC_MAX 10 10µs DC IC_MAX 1µs 1 1ms 0.1 o TC = 25 C IC= 5 IB1= - 5 IB2 Single Pulse 1 0.01 10 IC [A], COLLECTOR CURRENT FJU5304D Rev. A 10 Figure 4. Base-Emitter Saturation Voltage 10 0.01 0.1 1 IC [A], COLLECTOR CURRENT 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 3 www.fairchildsemi.com FJU5304D High Voltage Fast Switching Transistor Typical Performance Characteristics Figure 8. Power Derating Curve PC [W], COLLECTOR POWER DISSIPATION Figure 7. Reverse Biased Safe Operating Area 10 Vcc=50V, L = 1mH IB1=1A, IB2 = -1A IC [A], COLLECTOR CURRENT 9 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 900 1000 20 0 0 25 50 75 100 125 150 o VCE [V], COLLECTOR-EMITTER VOLTAGE FJU5304D Rev. A 40 TC [ C], CASE TEMPERATURE 4 www.fairchildsemi.com FJU5304D High Voltage Fast Switching Transistor Typical Performance Characteristics (Continued) FJU5304D High Voltage Fast Switching Transistor Mechanical Dimensions I-PAK Dimensions in Millimeters FJU5304D Rev. A 5 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13 6 FJU5304D Rev. A www.fairchildsemi.com FJU5304D High Voltage Fast Switching Transistor TRADEMARKS