KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value - 100 Units V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage -7 V IC Collector Current (DC) -7 A ICP *Collector Current (Pulse) - 15 A IB Base Current - 3.5 A PC Collector Dissipation (TC=25°C) 40 W Collector Dissipation (Ta=25°C) 1.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤300µs, Duty Cycle≤10% ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = - 5A, IB1 = - 0.5A, L = 1mH Min. - 100 VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = - 5A, IB1 = - IB2 = - 0.5A VBE(off) = 5V, L = 180µH Clamped - 100 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = - 10A, IB1 = - 1A IB2 = 0.5A, VBE(off) = 5V L = 180µH, Clamped - 100 V ICBO Collector Cut-off Current VCB = - 100V, IE = 0 ICER Collector Cut-off Current VCE = - 100V, RBE = 51Ω TC = 125°C ICEX1 Collector Cut-off Current VCE = - 100V, VBE(off) = 1.5V - 10 µA ICEX2 Collector Cut-off Current VCE = - 100V, VBE(off) = 1.5V TC = 125°C -1 mA IEBO Emitter Cut-off Current VEB = - 5V, IC= 0 - 10 uA hFE1 hFE2 hFE3 * DC Current Gain VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 5A 40 40 20 Max. Units V - 10 µA -1 mA 200 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 0.6 VBE(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V V tON Turn On Time 0.5 µs tSTG Storage Time 1.5 µs tF Fall Time VCC = - 50V, IC = - 5A, IB1 = - IB2 = - 0.5A RL = 10Ω 0.5 µs Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classification Classification R O Y hFE2 40 ~ 80 60 ~ 120 100 ~ 200 ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSA1010 Electrical Characteristics TC=25°C unless otherwise noted KSA1010 Typical Characteristics -5 IB = -100mA IB = 0m -8 A 1000 IB = -7 IB = -60mA 0m A IB = -50mA -4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = -90mA IB = -40mA -3 IB = -30mA IB = -20mA -2 IB = -10mA -1 -0 -0 -1 -2 -3 -4 VCE = -5.0V 100 10 1 -0.01 -5 -0.1 V CE[V], COLLECTOR-EMITTER VOLTAGE -10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -100 Lim ite d -1 s 0m 10 -0.01 -0.01 pa tio n s m 10 VCE(sat) Dis s s 1m -0.1 -10 s 0u 30 -1 IC Max. (Pulsed) us s 50 0u 10 VBE(sat) d ite m Li IC[A], COLLECTOR CURRENT IC = 10 IB b S/ VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE -1 -0.1 -0.01 -0.1 -1 -10 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 160 50 PC[W], POWER DISSIPATION 140 dT(%), IC DERATING 120 100 80 DI 60 SS IP AT I 40 S/b O N LI M LIM IT E 20 ITE D D 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 5. Derating Curve of Safe Operating Areas ©2001 Fairchild Semiconductor Corporation 40 30 20 10 0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, August 2001 KSA1010 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3