KSC5021 NPN Silicon Transistor • High Voltage and High Reliability • High Speed Switching : tF = 0.1ms (Typ.) • Wide SOA 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C © 2007 Fairchild Semiconductor Corporation KSC5021 Rev. 1.0.0 www.fairchildsemi.com 1 KSC5021 — NPN Silicon Transistor October 2008 Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped 500 V ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 mA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1 V VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.5 V Cob Output Capacitance VCB = 10V, IE = 0, f=1MHz 80 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.6A 18 MHz tON Turn On Time tSTG Storage Time VCC = 200V IC = 5IB1 = -2.5IB2 = 4A RL = 50W tF Fall Time 15 8 50 0.5 ms 3 ms 0.3 ms * Pulse Test: PW £ 300ms, Duty Cycle £ 2% hFE Classification Classification R O Y hFE1 15 ~ 30 20 ~ 40 30 ~ 50 © 2007 Fairchild Semiconductor Corporation KSC5021 Rev. 1.0.0 www.fairchildsemi.com 2 KSC5021 — NPN Silicon Transistor Electrical Characteristics KSC5021 — NPN Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain (R-Grade) 100 5.0 VCE = 5V 4.5 IC [A], COLLECTOR CURRENT O 4.0 IB = 300mA hFE, DC CURRENT GAIN 3.5 3.0 2.5 IB = 100mA 2.0 1.5 Ta = 75 C O IB = 50mA 1.0 Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 3. DC Current Gain (O-Grade) 10 VCE(sat) [V], SATURATION VOLTAGE VCE = 5V O O Ta = 75 C hFE, DC CURRENT GAIN Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 1 0.01 0.1 1 IC = 4 IB O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.01 0.01 10 0.1 Figure 5. Saturatin Voltage (O-Grade) 10 Figure 6. Saturation Voltage (R-Grade) 10 10 IC = 4 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CUTRRENT O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.1 1 IC = 4 IB O 1 Ta = 25 C O Ta = - 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 10 IC [A], COLLECTOR CURRENT 0.1 1 10 IC [A], COLLECTOR CURRENT © 2007 Fairchild Semiconductor Corporation KSC5021 Rev. 1.0.0 10 Figure 4. Saturation Voltage (R-Grade) 100 0.01 0.01 1 IC [A], COLLECTOR CUTRRENT VCE [V], COLLECTOR-EMITTER VOLTAGE www.fairchildsemi.com 3 1000 5 4 IB = 600mA V CE = 5V IB = 400mA IB = 1A hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 800mA IB = 1.2A IB = 200mA 3 IB = 100mA 2 IB = 50mA 1 100 10 IB = 20mA 0 IB = 0 0 2 4 6 8 1 0.01 10 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 6 10 IC = 5 IB VCE = 5V 5 1 IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 VBE(sat) 0.1 VCE(sat) 0.01 0.01 0.1 1 4 3 2 1 0 0.0 10 0.2 IC[A], COLLECTOR CURRENT 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 10 IC[A], COLLECTOR CURRENT 10 ms 1 0.1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Switching Time Figure 6. Safe Operating Area © 2007 Fairchild Semiconductor Corporation KSC5021 Rev. 1.0.0 1 0.01 0.01 0.1 0 50 tF DC s tON 0.1 IC(max) s 1m 1 50ms ICP (max) 10 m 10 tON, tSTG, tF [ms], TIME tSTG www.fairchildsemi.com 4 KSC5021 — NPN Silicon Transistor Typical Characteristics 80 100 70 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB2 = -1A L = 200mH 10 1 0.1 0.01 10 50 40 30 20 10 0 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating © 2007 Fairchild Semiconductor Corporation KSC5021 Rev. 1.0.0 60 www.fairchildsemi.com 5 KSC5021 — NPN Silicon Transistor Typical Characteristics (Continued) KSC5021 — NPN Silicon Transistor Package Dimension Dimensions in Millimeters © 2007 Fairchild Semiconductor Corporation KSC5021 Rev. 1.0.0 www.fairchildsemi.com 6 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation KSC5021 Rev. A1 www.fairchildsemi.com 7 KSC5021 NPN Silicon Transistor TRADEMARKS