FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m: Features General Description Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Applications Primary DC-DC Switch Fast switching speed Load Switch 100% UIL tested RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Units V ±20 V 2.7 12 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) 13 Power Dissipation (Note 1a) 1.5 Power Dissipation (Note 1b) 0.6 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient (Note 1) 75 (Note 1a) 80 °C/W Package Marking and Ordering Information Device Marking 8601 ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C Device FDN8601 Package SSOT-3 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDN8601 N-Channel PowerTrench® MOSFET July 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 100 V 68 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 3.0 -8 mV/°C VGS = 10 V, ID = 1.5 A 85.4 109 VGS = 6 V, ID = 1.2 A 117 175 VGS = 10 V, ID = 1.5 A, TJ = 125 °C 143 183 VDS = 10 V, ID = 1.5 A 8 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 156 210 pF 47 65 pF 2.7 5 pF : 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 1.5 A, VGS = 10 V, RGEN = 6 : VDD = 50 V, ID = 1.5 A 4.3 10 ns 1.3 10 ns 7.8 16 ns 3.4 10 ns 3 5 nC 1.8 3 nC 0.9 nC 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.5 A (Note 2) IF = 1.5 A, di/dt = 100 A/Ps 0.81 1.3 V 29 46 ns 15 27 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design. a) 80 °C/W when mounted on a b) 180 °C/W when mounted on a minimum pad. 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V. ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C 2 www.fairchildsemi.com FDN8601 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 12 VGS = 8 V VGS = 7 V 9 VGS = 6 V 6 VGS = 5 V 3 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5 V 4 VGS = 6 V 3 2 VGS = 7 V 1 PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX 0 5 0 3 Figure 1. On-Region Characteristics 12 500 ID = 1.5 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 IS, REVERSE DRAIN CURRENT (A) 9 VDS = 5 V 6 TJ = 25 oC 3 TJ = -55 oC 3 4 5 6 7 400 300 TJ = 125 oC 200 100 TJ = 25 oC 5 6 7 8 9 20 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.2 8 VGS = 0 V 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 2 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) 12 TJ = 150 oC ID = 1.5 A 0 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 6 VGS = 10 V ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 0 VGS = 8 V 3 1.2 www.fairchildsemi.com FDN8601 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 300 ID = 1.5 A VDD = 25 V Ciss 100 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 75 V 4 Coss 10 Crss 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 1 0.1 4 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 7 20 10 6 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 5 TJ = 25 oC 4 TJ = 100 oC 3 TJ = 125 oC 100 us 1 1 ms 0.1 THIS AREA IS LIMITED BY rDS(on) 0.01 2 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s RTJA = 180 oC/W DC o TA = 25 C 1 0.01 0.1 1 0.001 2 tAV, TIME IN AVALANCHE (ms) 0.1 1 10 100 400 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 300 SINGLE PULSE 100 o RTJA = 180 C/W o TA = 25 C 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C 4 www.fairchildsemi.com FDN8601 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 180 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C 5 www.fairchildsemi.com FDN8601 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C 6 www.fairchildsemi.com FDN8601 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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