N-Channel PowerTrench® MOSFET 30 V, 22 A, 10 mΩ Features General Description Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11.0 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced engineered for soft recovery body diode technology, Applications MSL1 robust package design IMVP Vcore Switching for Notebook 100% UIL tested VRM Vcore Switching for Desktop and server RoHS Compliant OringFET / Load Switching DC-DC Conversion Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 22 44 (Note 1a) -Pulsed 13.5 A 50 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 29 29 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 4.4 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7698 Device FDMS7698 ©2011 Fairchild Semiconductor Corporation FDMS7698 Rev.C1 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7698 N-Channel PowerTrench® MOSFET May 2011 FDMS7698 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 16 mV/°C 1 μA 100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.0 2.0 -6 mV/°C VGS = 10 V, ID = 13.5 A 8.1 10 VGS = 4.5 V, ID = 11.0 A 12.2 15 VGS = 10 V, ID = 13.5 A TJ = 125 °C 11 14 VDS = 5 V, ID = 13.5 A 53 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 0.3 1205 1605 pF 370 495 pF 35 55 pF 1.6 3.2 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = 15 V, ID = 13.5 A, VGS = 10 V, RGEN = 6 Ω 9 18 ns 3 10 ns 20 36 ns 3 10 ns nC td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V 17 24 Qg Total Gate Charge 7.5 12 Qgs Gate to Source Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 13.5 A Qgd Gate to Drain “Miller” Charge nC 3.9 nC 2.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.75 1.1 VGS = 0 V, IS = 13.5 A (Note 2) 0.86 1.2 24 38 ns 8 15 nC IF = 13.5 A, di/dt = 100 A/μs IF = 13.5 A, di/dt = 300 A/μs V 19 34 ns 13 24 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 29 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2011 Fairchild Semiconductor Corporation FDMS7698 Rev.C1 2 www.fairchildsemi.com FDMS7698 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V VGS = 6 V 40 VGS = 4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 50 VGS = 4 V 30 20 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 VGS = 3.5 V 2.0 2.5 VGS = 3.5 V 3 VGS = 6 V 2 1 0 0 10 40 50 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 30 ID = 13.5 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 50 IS, REVERSE DRAIN CURRENT (A) 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 4 TJ = 125 oC 15 10 TJ = 25 oC 4 6 8 10 VGS = 0 V 10 TJ = 150 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.0 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7698 Rev.C1 20 50 VDS = 5 V 3 25 Figure 4. On-Resistance vs Gate to Source Voltage 40 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1 ID = 13.5 A 5 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 20 VGS = 4.5 V VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 0 VGS = 4 V 4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS7698 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 13.5 A VDD = 10 V 1000 Ciss CAPACITANCE (pF) 8 VDD =15 V 6 VDD = 20 V 4 Coss 100 2 0 Crss f = 1 MHz VGS = 0 V 0 3 6 9 12 15 10 0.1 18 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 25 50 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 4.4 C/W 20 TJ = 25 oC 15 TJ = 125 oC TJ = 100 oC 10 5 1 0.01 0.1 1 10 40 VGS = 10 V 30 VGS = 4.5 V 20 Limited by Package 10 0 25 40 50 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 150 1000 100 us 10 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s RθJA = 125 oC/W DC o TA = 25 C 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) 0.1 1 10 100200 TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS7698 Rev.C1 SINGLE PULSE RθJA = 125 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7698 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS7698 Rev.C1 5 www.fairchildsemi.com FDMS7698 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS7698 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS7698 Rev.C1 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I54 ©2011 Fairchild Semiconductor Corporation FDMS7698 Rev.C1 7 www.fairchildsemi.com FDMS7698 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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