FDMC7660 N-Channel PowerTrench® MOSFET 30 V, 20 A, 2.2 mΩ Features General Description Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Applications DC - DC Buck Converters Point of Load High Efficiency Load Switch and Low Side Switching Bottom Top S D D D Pin 1 S S G D S D S D S D G D Power 33 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 40 100 (Note 1a) 20 (Note 3) 200 -Pulsed A 200 Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 41 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to + 150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC7660 Device FDMC7660 ©2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 Package Power 33 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET June 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 2.5 V 30 V 14 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.7 -6 mV/°C VGS = 10 V, ID = 20 A 1.8 2.2 VGS = 4.5 V, ID = 18 A 2.6 3.3 VGS = 10 V, ID = 20 A, TJ = 125°C 2.2 3.1 VDS = 5 V, ID = 20 A 163 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1MHz 3630 4830 pF 1345 1790 pF 110 165 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 15 V, ID = 20 A, VGS = 10 V, RGEN = 6 Ω 14 25 6.8 14 ns ns 36 58 ns tf Fall Time 5.7 11 ns Qg Total Gate Charge VGS = 0 V to 10 V 54 86 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 20 A 24 38 Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge nC 11 nC 5.6 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 20 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 1.9 A (Note 2) 0.7 1.2 IF = 20 A, di/dt = 100 A/μs V 45 63 ns 25 35 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. b. 125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 20 A, VDD = 27 V, VGS = 10 V 4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 2 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 3.0 200 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 10 V 150 VGS = 4.5 V VGS = 4 V 100 VGS = 3.5 V 50 VGS = 3 V 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.5 VGS = 3 V VGS = 3.5 V 2.0 VGS = 4 V 1.5 1.0 2.0 0 50 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 200 15 ID = 20 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 ID = 20 A 5 TJ = 125oC TJ = 25 oC 0 100 125 150 2 4 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 150 VDS = 5 V TJ = 150 oC 100 TJ = 25 oC 50 TJ = -55 oC 4 10 VGS = 0 V TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 200 100 0.1 0.2 0 3 8 Figure 4. On-Resistance vs Gate to Source Voltage 200 2 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 0.5 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 ID = 20 A Ciss 8 CAPACITANCE (nF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Coss 1 Crss f = 1 MHz VGS = 0 V 2 0.1 0 0 20 40 0.05 0.1 60 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 150 30 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJC = 3 C/W TJ = 25 oC TJ = 100 oC TJ = 125 oC VGS = 10 V 100 VGS = 4.5 V 50 Limited by Package 1 0.01 0.1 1 10 0 25 100 300 50 150 1000 P(PK), PEAK TRANSIENT POWER (W) DERIVED FROM TESTED DATA 100 ID, DRAIN CURRENT (A) 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 10 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms SINGLE PULSE TJ = MAX RATED 100 ms RθJA = 125 oC/W 1s 10 s TA = 25 oC DC 0.01 0.01 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 SINGLE PULSE RθJA = 125 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 1E-3 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 5 www.fairchildsemi.com FDMC7660 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC7660 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC7660 Rev.C5 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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