FDP036N10A N-Channel tm PowerTrench® MOSFET 100V, 214A, 3.6mΩ Features Description • RDS(on) = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • DC to DC Convertors / Synchronous Rectification • High Power and Current Handling Capability • RoHS Compliant D DRAIN (FLANGE) SOURCE DRAIN GATE G TO-220AB FDP Series S MOSFET Maximum Ratings TC = 25 C unless otherwise noted o Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V - Continuous (TC = 25oC, Silicon Limited) 214* - Continuous (TC = 100oC, Silicon Limited) 151* - Continuous (TC = 25oC, Package Limited) 120 - Pulsed (Note 1) 856 A (Note 2) 658 mJ 6.0 V/ns (Note 3) A (TC = 25oC) 333 W - Derate above 25oC 2.22 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 100 -55 to +175 o C 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.45 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2011 Fairchild Semiconductor Corporation FDP036N10A Rev. A3 1 Units o C/W www.fairchildsemi.com FDP036N10A N-Channel PowerTrench® MOSFET July 2011 Device Marking FDP036N10A Device FDP036N10A Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V - 0.07 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 VDS = 80V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.0 3.0 4.0 V - 3.2 3.6 mΩ - 167 - S ID = 250μA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 75A gFS Forward Transconductance VDS = 10V, ID = 75A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 80V, ID = 75A VGS = 10V - 5485 7295 pF - 2430 3230 pF - 210 315 pF - 89 116 nC - 24 - nC - 8 - nC - 25 - nC - 22 54 ns - 54 118 ns - 37 84 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time - 11 32 ns ESR Equivalent Series Resistance (G-S) - 1.2 - Ω VDD = 50V, ID = 75A VGS = 10V, RGEN = 4.7Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 214 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 856 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.25 V trr Reverse Recovery Time - 72 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A, VDD = 80V dIF/dt = 100A/μs - 129 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Starting TJ = 25°C, L = 1mH, IAS = 36.3A 3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP036N10A Rev. A3 2 www.fairchildsemi.com FDP036N10A N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 100 300 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 100 ID, Drain Current[A] ID, Drain Current[A] 600 Figure 2. Transfer Characteristics 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 10V 2. 250μs Pulse Test o 2. TC = 25 C 2 0.02 1 0.1 1 VDS, Drain-Source Voltage[V] 10 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.0040 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 500 0.0035 VGS = 10V VGS = 20V 0.0030 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.0025 0 *Note: TC = 25 C 60 120 180 240 ID, Drain Current [A] 300 1 0.2 360 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 6. Gate Charge Characteristics 10 10000 Ciss VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 6 *Note: 1. VGS = 0V 2. f = 1MHz 5000 Coss VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 Crss 100 0.1 FDP036N10A Rev. A3 *Note: ID = 75A 0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 30 60 Qg, Total Gate Charge [nC] 90 www.fairchildsemi.com FDP036N10A N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.1 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.8 1.5 1.2 0.9 0.6 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 75A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 2000 1000 250 200 100 ID, Drain Current [A] ID, Drain Current [A] 10us 100us 1ms 10ms DC 10 Operation in This Area is Limited by R DS(on) 1 *Notes: o 1. TC = 25 C 150 100 50 o 2. TJ = 175 C 3. Single Pulse 0.1 0.1 Limited by package 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Unclamped Inductive Switching Capability IAS, AVALANCHE CURRENT (A) 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) FDP036N10A Rev. A3 4 www.fairchildsemi.com FDP036N10A N-Channel PowerTrench® MOSFET Typical Performance Characteristics FDP036N0A N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 0.01 *Notes: Single pulse t2 o 1. ZθJC(t) = 0.45 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.001 -5 10 FDP036N10A Rev. A3 PDM 0.05 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDP036N10A N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP036N10A Rev. A3 6 www.fairchildsemi.com FDP036N10A N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP036N10A Rev. A3 7 www.fairchildsemi.com FDP036N10A N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220AB FDP036N10A Rev. A3 8 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 FDP036N10A Rev. 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