FAIRCHILD FDB024N06

FDB024N06
tm
®
N-Channel PowerTrench MOSFET
60V, 265A, 2.4mΩ
Features
General Description
• RDS(on) = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
Application
• RoHS compliant
• DC to DC convertors / Synchronous Rectification
D
D
G
G
S
D2-PAK
FDB Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
Drain Current
ID
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
- Pulsed
Units
V
±20
V
265*
A
190*
A
120
A
(Note 1)
1060
A
(Note 2)
2531
mJ
3.5
V/ns
(Note 3)
(TC = 25oC)
395
W
- Derate above 25oC
2.6
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
Ratings
60
-55 to +175
o
C
300
o
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case
0.38
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2008 Fairchild Semiconductor Corporation
FDB024N06 Rev. A3
1
Units
oC/W
www.fairchildsemi.com
FDB024N06 N-Channel PowerTrench® MOSFET
July 2008
Device Marking
FDB024N06
Device
FDB024N06
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
60
-
-
V
-
0.04
-
V/oC
µA
Off Characteristics
BVDSS
∆BVDSS
∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250µA, VGS = 0V, TC= 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
-
-
1
VDS = 60V, VGS = 0V, TC = 150oC
-
-
500
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
2.5
3.5
4.5
V
-
1.8
2.4
mΩ
-
200
-
S
o
ID = 250µA, Referenced to 25 C
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
gFS
Forward Transconductance
VDS = 10V, ID = 75A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 48V, ID = 75A
VGS = 10V
(Note 4, 5)
-
11190
14885
pF
-
1610
2140
pF
-
750
1125
pF
-
174
226
nC
-
54
-
nC
-
50
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 30V, ID = 75A
VGS = 10V, RGEN = 25Ω
(Note 4, 5)
-
134
278
ns
-
324
658
ns
-
348
706
ns
-
250
510
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
265
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
1060
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
-
-
1.3
V
trr
Reverse Recovery Time
-
69
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
-
152
-
nC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.9mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDB024N06 Rev. A3
2
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FDB024N06 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
1000
700
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
ID,Drain Current[A]
ID,Drain Current[A]
Figure 2. Transfer Characteristics
10
100
o
175 C
o
25 C
o
-55 C
10
*Notes:
1. 250µs Pulse Test
o
2. TC = 25 C
1
0.01
0.1
VDS,Drain-Source Voltage[V]
1
1
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
VGS,Gate-Source Voltage[V]
500
IS, Reverse Drain Current [A]
2.5
VGS = 10V
2.0
VGS = 20V
1.5
o
o
175 C
100
o
25 C
10
*Notes:
1. VGS = 0V
*Note: TC = 25 C
2. 250µs Pulse Test
1
0.0
1.0
0
100
200
300
ID, Drain Current [A]
400
Figure 5. Capacitance Characteristics
1.4
10
*Note:
1. VGS = 0V
2. f = 1MHz
VGS, Gate-Source Voltage [V]
Ciss
12000
Coss
8000
4000
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
16000
Capacitances [pF]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3.0
RDS(ON) [mΩ],
Drain-Source On-Resistance
3
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Crss
VDS = 15V
VDS = 30V
VDS = 48V
8
6
4
2
*Note: ID = 75A
0
0.1
FDB024N06 Rev. A3
0
1
10
VDS, Drain-Source Voltage [V]
0
60
3
40
80
120
160
Qg, Total Gate Charge [nC]
200
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FDB024N06 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
1.10
1.05
1.00
*Notes:
1. VGS = 0V
2. ID = 10mA
0.95
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1.6
1.2
0.8
*Notes:
1. VGS = 10V
2. ID = 75A
0.4
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
300
1000
250
100µs
100
Operation in This Area
is Limited by R DS(on)
10
ID, Drain Current [A]
ID, Drain Current [A]
10µs
1ms
10ms
DC
*Notes:
o
1. TC = 25 C
1
o
2. TJ = 175 C
3. Single Pulse
150
Limited by package
100
50
0.1
1
200
10
VDS, Drain-Source Voltage [V]
0
25
100
50
75
100
125o
150
TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
t1
*Notes:
0.02
0.01
Single pulse
t2
o
1. ZθJC(t) = 0.38 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
0.005
-5
10
FDB024N06 Rev. A3
PDM
0.1
0.05
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
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FDB024N06 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDB024N06 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB024N06 Rev. A3
5
www.fairchildsemi.com
FDB024N06 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDB024N06 Rev. A3
6
www.fairchildsemi.com
FDB024N06 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
D2-PAK
Dimensions in Millimeters
FDB024N06 Rev. A3
7
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Datasheet contains the design specifications for product development. Specifications
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Rev. I35