FDPF680N10T N-Channel PowerTrench® MOSFET 100V, 12A, 68mΩ Features Description • RDS(on) = 54mΩ ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Application • DC to AC Converters / Synchronous Rectification D G GD S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt -Continuous (TC = 25oC) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC Units V ±20 V 12 -Continuous (TC = 100oC) - Pulsed Ratings 100 A 7.6 (Note 1) 48 A (Note 2) 50.4 mJ (Note 3) 13.0 V/ns 24 W 0.19 W/oC -55 to +150 oC o 300 C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 5.2 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2008 Fairchild Semiconductor Corporation FDPF680N10T Rev. A 1 Units o C/W www.fairchildsemi.com FDPF680N10T N-Channel PowerTrench® MOSFET November 2008 Device Marking FDPF680N10T Device FDPF680N10T Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TC = 25oC 100 - - V ID = 250μA, Referenced to 25oC - 0.1 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 100V, VGS = 0V - - 1 VDS = 100V, VGS = 0V, TC = 150oC - - 500 VGS = ±20V, VDS = 0V - - ±100 2.5 3.5 4.5 V - 54 68 mΩ - 26 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 6A gFS Forward Transconductance VDS = 10V, ID = 12A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 50V, VGS = 0V f = 1MHz VDS = 80V, ID = 12A VGS = 10V (Note 4, 5) - 750 1000 pF - 60 80 pF - 25 40 pF - 13 17 nC - 4 - nC - 4 - nC - 13 36 ns - 19 48 ns - 18 46 ns - 6 22 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50V, ID = 12A VGS = 10V, RGEN = 10Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 12 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.3 V trr Reverse Recovery Time - 29 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 12A dIF/dt = 100A/μs - 35 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.7mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDPF680N10T Rev. A 2 www.fairchildsemi.com FDPF680N10T N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] Figure 2. Transfer Characteristics 60 60 o 150 C 10 1 o -55 C o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.1 0.01 2. TC = 25 C 0.1 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.20 200 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 100 0.15 VGS = 10V 0.10 VGS = 20V 0.05 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o 0 *Note: TC = 25 C 0 10 20 30 40 ID, Drain Current [A] 50 0.1 0.0 60 Figure 5. Capacitance Characteristics 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] 1000 Coss 100 10 0.01 FDPF680N10T Rev. A Crss *Note: 1. VGS = 0V 2. f = 1MHz 0.1 1 10 VDS, Drain-Source Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 5000 Ciss 2. 250μs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] 6 4 2 0 50 3 VDS = 25V VDS = 50V VDS = 80V 8 *Note: ID = 12A 0 3 6 9 12 Qg, Total Gate Charge [nC] 15 www.fairchildsemi.com FDPF680N10T N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 *Notes: 1. VGS = 10V 2. ID = 6A 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 100 14 20μs 12 1ms 10ms ID, Drain Current [A] ID, Drain Current [A] 100μs 10 DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 10 8 6 4 o 1. TC = 25 C 2 o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 200 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 10 0.5 1 0.2 0.1 t1 0.02 0.1 0.01 t2 *Notes: o 1. ZθJC(t) = 5.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDPF680N10T Rev. A PDM 0.05 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 4 10 2 10 www.fairchildsemi.com FDPF680N10T N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDPF680N10T N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDPF680N10T Rev. A 5 www.fairchildsemi.com FDPF680N10T N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lta g e D r o p FDPF680N10T Rev. A 6 www.fairchildsemi.com FDPF680N10T N-Channel PowerTrench® MOSFET Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDPF680N10T Rev. A 7 www.fairchildsemi.com FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ μSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FDPF680N10T Rev. A 8 www.fairchildsemi.com FDPF680N10T N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.