FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Applications Load Switch Fast switching speed Synchronous Rectifier 100% UIL Tested Primary Switch RoHS Compliant S D S 4 3 G D 5 2 D D 6 1 D D G D Pin 1 D SuperSOTTM -6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Units V ±20 V 2.7 12 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) 13 Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 30 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking .861 ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C1 Device FDC8601 Package SSOT-6 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 100 V 70 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 3.0 -8 mV/°C VGS = 10 V, ID = 2.7 A 86 109 VGS = 6 V, ID = 2.1 A 119 176 VGS = 10 V, ID = 2.7 A, TJ = 125 °C 144 183 VDD = 10 V, ID = 2.7 A 5 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 155 210 pF 46 65 pF 2.2 5 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V ID = 2.7 A 4.5 10 ns 1.3 10 ns 7.6 16 ns 2 10 ns 3 5 nC 1.7 3 nC 0.9 nC 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.7 A IF = 2.7 A, di/dt = 100 A/μs (Note 2) 0.85 1.3 V 34 54 ns 21 34 nC NOTES: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.175 °C/W when mounted on a minimum pad of 2 oz copper a. 78 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. Starting TJ = 25 oC, L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V. ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C1 2 www.fairchildsemi.com FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 6.5 V ID, DRAIN CURRENT (A) VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 VGS = 6 V 9 VGS = 5.5 V 6 VGS = 5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5 V 4 VGS = 6 V 3 VGS = 6.5 V 2 1 0 5 0 3 6 9 12 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) 500 ID = 2.7 A VGS = 10 V ID = 2.7 A PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 400 300 TJ = 125 oC 200 100 TJ = 25 oC 0 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 5 6 7 8 9 Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 12 20 10 VGS = 0 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 9 VDS = 5 V 6 TJ = 150 oC TJ = 25 oC 3 TJ = -55 0 2 3 4 5 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC oC 6 7 0.001 0.2 8 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C1 10 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) VGS = 5.5 V 3 1.2 www.fairchildsemi.com FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 300 ID = 2.7 A VDD = 25 V Ciss 100 8 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 10 Crss 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 1 0.1 4 Figure 7. Gate Charge Characteristics 7 3.0 6 2.5 5 100 TJ = 25 oC 4 TJ = 100 oC 3 TJ = 125 oC VGS = 10 V 2.0 1.5 VGS = 6 V 1.0 2 0.5 1 0.01 0.0 25 o RθJA = 78 C/W 0.1 1 2 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 20 10 P(PK), PEAK TRANSIENT POWER (W) 300 100 us 1 1 ms 0.1 75 TC, Ambient TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) THIS AREA IS LIMITED BY rDS(on) 0.01 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s RθJA = 175 oC/W DC o TA = 25 C 0.001 0.1 1 10 100 400 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C1 SINGLE PULSE RθJA = 175 oC/W 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 175 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Juncton-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C1 5 www.fairchildsemi.com FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C1 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FDC8601 Rev.C1 7 www.fairchildsemi.com FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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