FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 37 A, 23 m: Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 23 m: at VGS = 10 V, ID = 8 A Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Application DC - DC Conversion Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant D D G S G D -P-2A52 K TO (T O -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 °C -Continuous TA = 25 °C ID TJ, TSTG ±20 V (Note 1a) 8 A 40 Single Pulse Avalanche Energy PD Units V 37 -Pulsed EAS Ratings 80 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 121 62 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 2.0 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD86326 Device FDD86326 ©2010 Fairchild Semiconductor Corporation FDD86326 Rev.C2 Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET May 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 80 V 67 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2 3.1 -8.5 mV/°C VGS = 10 V, ID = 8 A 19 23 VGS = 6 V, ID = 4.6 A 26 37 VGS = 10 V, ID = 8 A, TJ = 125 °C 33 44 VDS = 10 V, ID = 8 A 21 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 780 1035 pF 180 240 pF 15 25 pF : 0.4 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Gate to Drain “Miller” Charge 24 ns ns nC 7.6 11 nC VGS = 0 V to 5 V Qgd ns 13.4 10 VGS = 0 V to 10 V Gate to Source Gate Charge ns 19 Total Gate Charge Total Gate Charge 10 2.9 Fall Time Qg 15 3.0 13.4 tf Qg Qgs 7.6 VDD = 50 V, ID = 8 A, VGS = 10 V, RGEN = 6 : VDD = 50 V, ID = 8 A 4.0 nC 3.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 2.6 A (Note 2) 0.7 1.2 IF = 8 A, di/dt = 100 A/Ps V 43 68 ns 43 68 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJCis guaranteed by design while RTJA is determined by the user’s board design. a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 96 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3 mH, IAS = 9 A, VDD = 80 V, VGS = 10 V. ©2010 Fairchild Semiconductor Corporation FDD86326 Rev.C2 2 www.fairchildsemi.com FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 40 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 30 VGS = 8 V VGS = 6 V 20 VGS = 5 V 10 VGS = 4.5 V 0 0 1 2 3 4 6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 5 VGS = 5 V 4 3 VGS = 6 V 2 1 0 5 0 10 20 30 40 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 80 ID = 8 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 8 V VDS, DRAIN TO SOURCE VOLTAGE (V) 40 30 TJ = 25 oC 20 6 8 10 50 IS, REVERSE DRAIN CURRENT (A) TJ = 150 oC 10 TJ = 25 oC TJ = -55 oC 0 4 TJ = 125 oC 40 Figure 4. On-Resistance vs Gate to Source Voltage 20 3 50 VGS, GATE TO SOURCE VOLTAGE (V) VDS = 5 V 2 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 60 4 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 30 ID = 8 A 70 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 5 6 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 7 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDD86326 Rev.C2 3 1.2 www.fairchildsemi.com FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 8 A VDD = 25 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 75 V 4 Coss 100 2 f = 1 MHz VGS = 0 V 0 0 3 6 9 12 Qg, GATE CHARGE (nC) 80 Figure 8. Capacitance vs Drain to Source Voltage ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 40 TJ = 25 oC 4 3 TJ = 125 oC TJ = 100 oC 2 30 VGS = 10 V 20 VGS = 4.5 V 10 o 1 0.01 RTJC = 2 C/W 0.1 1 10 0 25 30 tAV, TIME IN AVALANCHE (ms) 50 75 100 125 150 o Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 9 8 7 6 5 Crss 10 0.1 15 100 us 10 VGS = 10 V SINGLE PULSE RTJC = 2 oC/W TC = 25 oC 1000 THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1 RTJC = 2 oC/W TC = 25 oC 1 ms 10 ms 100 ms DC 50 -5 10 0.1 1 10 100 200 -4 10 -3 10 -2 10 -1 10 1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDD86326 Rev.C2 100 4 www.fairchildsemi.com FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJC x RTJC + TC SINGLE PULSE o RTJC = 2 C/W 0.01 -5 10 -4 10 Figure 13. ©2010 Fairchild Semiconductor Corporation FDD86326 Rev.C2 -3 -2 10 10 C GTransient S Junction-to-Case 5 O ( Response ) Thermal -1 10 1 Curve www.fairchildsemi.com FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FDD86326 Rev.C2 6 www.fairchildsemi.com FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* AX-CAP®* FRFET® PowerTrench® BitSiC™ Global Power ResourceSM PowerXS™ TinyBoost™ Green Bridge™ Programmable Active Droop™ Build it Now™ TinyBuck™ Green FPS™ QFET® CorePLUS™ TinyCalc™ QS™ CorePOWER™ Green FPS™ e-Series™ TinyLogic® Quiet Series™ CROSSVOLT™ Gmax™ TINYOPTO™ RapidConfigure™ CTL™ GTO™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ DEUXPEED® ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® SignalWise™ and Better™ TriFault Detect™ EfficentMax™ SmartMax™ MegaBuck™ TRUECURRENT®* ESBC™ SMART START™ MICROCOUPLER™ PSerDes™ Solutions for Your Success™ MicroFET™ ® SPM® MicroPak™ STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™