TLMB / G / O / P / S / Y2100 Vishay Semiconductors MiniLED Description The new MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MinLED is an obvious solution for small-scale, high-power products that are expected to work reliably in an arduous environment. This is often the case in automotive and industrial application of course. 19226 Features e3 Pb Pb-free • SMD LEDs with exceptional brightness • Luminous intensity categorized • • • • • • Compatible with automatic placement equipment EIA and ICE standard package IR reflow soldering Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 2.0, optional ≤ 1.6 • Lead-free device Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLMS2100 Red, IV = 7.5 mcd (typ.) 60 ° GaAsP on GaP TLMO2100 Soft orange, IV = 7.5 mcd (typ.) 60 ° GaAsP on GaP TLMY2100 Yellow, IV = 7.5 mcd (typ.) 60 ° GaAsP on GaP TLMG2100 Green, IV = 10 mcd (typ.) 60 ° GaP on GaP TLMP2100 Pure green, IV = 2.2 mcd (typ.) 60 ° GaP on GaP TLMB2100 Blue, IV = 7 mcd (typ.) 60 ° GaN Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 1 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMS2100 ,TLMO2100 ,TLMY2100 ,TLMG2100 ,TLMP2100 Parameter Test condition Symbol Value VR 6 V IF 30 mA IFSM 0.5 A PV 95 mW Reverse voltage DC Forward current Tamb ≤ 60 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 60 °C Junction temperature Unit Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature according IPC 9501 Thermal resistance junction/ ambient mounted on PC board Tsd 245 °C RthJA 480 K/W Symbol Value Unit VR 5 V IF 20 mA IFSM 0.1 A PV 90 mW Tj 100 °C Tamb - 40 to + 100 °C Tstg - 40 to + 100 °C Tsd 245 °C RthJA 480 K/W (pad size > 5 mm2) TLMB2100 Parameter Test condition Reverse voltage DC Forward current Tamb ≤ 60 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 60 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature according IPC 9501 Thermal resistance junction/ ambient mounted on PC board (pad size > 5 mm2) Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMS2100 Parameter Symbol Min Typ. IF = 10 mA IV 2.5 7.5 Dominant wavelength IF = 10 mA λd 624 Peak wavelength IF = 10 mA λp 640 Luminous intensity 2) Test condition 628 Angle of half intensity IF = 10 mA ϕ ± 60 Forward voltage IF = 20 mA VF 2.1 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) Unit mcd 636 nm nm deg 3.0 V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 2.0 www.vishay.com 2 6 Max Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Soft Orange TLMO2100 Parameter Luminous intensity 2) Symbol Min Typ. IF = 10 mA Test condition IV 3.2 7.5 598 Max Unit mcd Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 605 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) 605 2.1 6 611 3 nm V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 2.0 Yellow TLMY2100 Parameter Luminous intensity 2) Symbol Min Typ. IF = 10 mA Test condition IV 3.2 7.5 581 Max Unit mcd Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 585 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) 588 2.2 6 594 3 nm V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 2.0 Green TLMG2100 Parameter Luminous intensity 2) Symbol Min Typ. IF = 10 mA Test condition IV 6.3 10 562 Max Unit mcd Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 565 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) 568 2.2 6 575 3.0 nm V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 2.0 Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 3 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Pure green TLMP2100 Parameter Luminous intensity Test condition 2) Symbol Min Typ. IF = 10 mA IV 1.0 2.2 555 Max Unit mcd Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 555 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) 560 565 2.4 6 3 nm V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 2.0 Blue TLMB2100 Parameter Luminous intensity Test condition 1) Symbol Min Typ. IF = 10 mA IV 4.0 7.0 Max mcd Unit nm Dominant wavelength IF = 10 mA λd 465 Peak wavelength IF = 10 mA λp 428 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR 1) 3.9 4.5 5.0 V V in one Packing Unit IVmax/IVmin ≤ 1.6 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 40 Red, Soft orange, Yellow, Green, Pure green 100 I F - Forward Current ( mA ) PV - Power Dissipation (mW) 120 Blue 80 60 40 20 25 Blue 20 15 10 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 4 30 5 0 18023 Red, Soft orange, Yellow, Green, Pure green 35 0 18024 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors 0° 10° 20° I V re l - Relative Luminous Intensity 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10319 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 5 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Package Dimensions in mm 16892 www.vishay.com 6 Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Reel Dimensions 16938 Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 7 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Tape Dimensions 16939 Leader and Trailer Trailer no devices Leader devices no devices End Start min. 200 min. 400 96 11818 GS08 = 3000 pcs www.vishay.com 8 Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Cover Tape Peel Strength Label According to DIN EN 60286-3 0.1 to 1.3 N 300 ± 10 mm/min 165 ° - 180 ° peel angle Standard bar code labels for finished goods The standard bar code labels are product labels and used for identification of goods. The finished goods are packed in final packing area. The standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. The labels are on each packing unit and contain Vishay Semiconductor GmbH specific data. Vishay Semiconductor GmbH standard bar code product label (finished goods) Plain Writing Item-Description Item-Number Selection-Code LOT-/ Serial-Number Data-Code Plant-Code Quantity Accepted by: Packed by: Mixed Code Indicator Origin Abbreviation – INO SEL BATCH COD PTC QTY ACC PCK MIXED CODE xxxxxxx+ Length 18 8 3 10 3 (YWW) 2 8 – – – Company Logo Long Bar Code Top Item-Number Plant-Code Sequence-Number Quantity Total Length Type N N X N – Length 8 2 3 8 21 Short Bar Code Bottom Selection–Code Data-Code Batch-Number Filter Total Length Type X N X – – Length 3 3 10 1 17 16942 Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 9 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Dry Packing The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. Aluminium bag Label Reel 17028 15973 Example of JESD22-A112 Level 2 label ESD Precaution Final Packing The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. Recommended Method of Storage Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 1 year under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 °C + 5 °C/ -0 °C and < 5 % RH (dry air/ nitrogen) or 96 hours at 60 °C +5 °C and < 5 % RH for all device containers or 24 hours at 100 °C +5 °C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 2 label is included on all dry bags. www.vishay.com 10 Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging. Vishay Semiconductors Standard Bar-Code Labels The Vishay Semiconductors standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data. Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 11