VISHAY TLMG2100

TLMB / G / O / P / S / Y2100
Vishay Semiconductors
MiniLED
Description
The new MiniLED Series have been designed in a
small white SMT package. The feature of the device
is the very small package 2.3 mm x 1.3 mm x 1.4 mm.
The MinLED is an obvious solution for small-scale,
high-power products that are expected to work reliably in an arduous environment. This is often the case
in automotive and industrial application of course.
19226
Features
e3 Pb
Pb-free
• SMD LEDs with exceptional brightness
• Luminous intensity categorized
•
•
•
•
•
•
Compatible with automatic placement equipment
EIA and ICE standard package
IR reflow soldering
Available in 8 mm tape
Low profile package
Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
IVmax/IVmin ≤ 2.0, optional ≤ 1.6
• Lead-free device
Applications
Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in
telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
Parts Table
Part
Color, Luminous Intensity
Angle of Half Intensity (±ϕ)
Technology
TLMS2100
Red, IV = 7.5 mcd (typ.)
60 °
GaAsP on GaP
TLMO2100
Soft orange, IV = 7.5 mcd (typ.)
60 °
GaAsP on GaP
TLMY2100
Yellow, IV = 7.5 mcd (typ.)
60 °
GaAsP on GaP
TLMG2100
Green, IV = 10 mcd (typ.)
60 °
GaP on GaP
TLMP2100
Pure green, IV = 2.2 mcd (typ.)
60 °
GaP on GaP
TLMB2100
Blue, IV = 7 mcd (typ.)
60 °
GaN
Document Number 83199
Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLMS2100 ,TLMO2100 ,TLMY2100 ,TLMG2100 ,TLMP2100
Parameter
Test condition
Symbol
Value
VR
6
V
IF
30
mA
IFSM
0.5
A
PV
95
mW
Reverse voltage
DC Forward current
Tamb ≤ 60 °C
Surge forward current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 60 °C
Junction temperature
Unit
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
according IPC 9501
Thermal resistance junction/
ambient
mounted on PC board
Tsd
245
°C
RthJA
480
K/W
Symbol
Value
Unit
VR
5
V
IF
20
mA
IFSM
0.1
A
PV
90
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
Tstg
- 40 to + 100
°C
Tsd
245
°C
RthJA
480
K/W
(pad size > 5 mm2)
TLMB2100
Parameter
Test condition
Reverse voltage
DC Forward current
Tamb ≤ 60 °C
Surge forward current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 60 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
according IPC 9501
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 5 mm2)
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLMS2100
Parameter
Symbol
Min
Typ.
IF = 10 mA
IV
2.5
7.5
Dominant wavelength
IF = 10 mA
λd
624
Peak wavelength
IF = 10 mA
λp
640
Luminous intensity
2)
Test condition
628
Angle of half intensity
IF = 10 mA
ϕ
± 60
Forward voltage
IF = 20 mA
VF
2.1
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
2)
Unit
mcd
636
nm
nm
deg
3.0
V
15
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 2.0
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2
6
Max
Document Number 83199
Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Soft Orange
TLMO2100
Parameter
Luminous intensity
2)
Symbol
Min
Typ.
IF = 10 mA
Test condition
IV
3.2
7.5
598
Max
Unit
mcd
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
605
nm
Angle of half intensity
IF = 10 mA
ϕ
± 60
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
2)
605
2.1
6
611
3
nm
V
15
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 2.0
Yellow
TLMY2100
Parameter
Luminous intensity
2)
Symbol
Min
Typ.
IF = 10 mA
Test condition
IV
3.2
7.5
581
Max
Unit
mcd
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
585
nm
Angle of half intensity
IF = 10 mA
ϕ
± 60
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
2)
588
2.2
6
594
3
nm
V
15
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 2.0
Green
TLMG2100
Parameter
Luminous intensity
2)
Symbol
Min
Typ.
IF = 10 mA
Test condition
IV
6.3
10
562
Max
Unit
mcd
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
565
nm
Angle of half intensity
IF = 10 mA
ϕ
± 60
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
2)
568
2.2
6
575
3.0
nm
V
15
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 2.0
Document Number 83199
Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Pure green
TLMP2100
Parameter
Luminous intensity
Test condition
2)
Symbol
Min
Typ.
IF = 10 mA
IV
1.0
2.2
555
Max
Unit
mcd
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
555
nm
Angle of half intensity
IF = 10 mA
ϕ
± 60
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
2)
560
565
2.4
6
3
nm
V
15
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 2.0
Blue
TLMB2100
Parameter
Luminous intensity
Test condition
1)
Symbol
Min
Typ.
IF = 10 mA
IV
4.0
7.0
Max
mcd
Unit
nm
Dominant wavelength
IF = 10 mA
λd
465
Peak wavelength
IF = 10 mA
λp
428
nm
Angle of half intensity
IF = 10 mA
ϕ
± 60
deg
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
1)
3.9
4.5
5.0
V
V
in one Packing Unit IVmax/IVmin ≤ 1.6
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
40
Red, Soft orange,
Yellow, Green, Pure green
100
I F - Forward Current ( mA )
PV - Power Dissipation (mW)
120
Blue
80
60
40
20
25
Blue
20
15
10
0
0
20
40
60
80
100
Tamb - Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
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4
30
5
0
18023
Red, Soft orange,
Yellow, Green, Pure green
35
0
18024
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Document Number 83199
Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors
0°
10°
20°
I V re l - Relative Luminous Intensity
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10319
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Document Number 83199
Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Package Dimensions in mm
16892
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Document Number 83199
Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Reel Dimensions
16938
Document Number 83199
Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Tape Dimensions
16939
Leader and Trailer
Trailer
no devices
Leader
devices
no devices
End
Start
min. 200
min. 400
96 11818
GS08 = 3000 pcs
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Document Number 83199
Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Cover Tape Peel Strength
Label
According to DIN EN 60286-3
0.1 to 1.3 N
300 ± 10 mm/min
165 ° - 180 ° peel angle
Standard bar code labels for finished goods
The standard bar code labels are product labels and
used for identification of goods. The finished goods
are packed in final packing area. The standard packing units are labeled with standard bar code labels
before transported as finished goods to warehouses.
The labels are on each packing unit and contain
Vishay Semiconductor GmbH specific data.
Vishay Semiconductor GmbH standard bar code product label (finished goods)
Plain Writing
Item-Description
Item-Number
Selection-Code
LOT-/ Serial-Number
Data-Code
Plant-Code
Quantity
Accepted by:
Packed by:
Mixed Code Indicator
Origin
Abbreviation
–
INO
SEL
BATCH
COD
PTC
QTY
ACC
PCK
MIXED CODE
xxxxxxx+
Length
18
8
3
10
3 (YWW)
2
8
–
–
–
Company Logo
Long Bar Code Top
Item-Number
Plant-Code
Sequence-Number
Quantity
Total Length
Type
N
N
X
N
–
Length
8
2
3
8
21
Short Bar Code Bottom
Selection–Code
Data-Code
Batch-Number
Filter
Total Length
Type
X
N
X
–
–
Length
3
3
10
1
17
16942
Document Number 83199
Rev. 1.6, 20-Jan-05
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TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Dry Packing
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during transportation and storage.
Aluminium bag
Label
Reel
17028
15973
Example of JESD22-A112 Level 2 label
ESD Precaution
Final Packing
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping purposes.
Recommended Method of Storage
Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 1 year under these conditions moisture content will be too high for reflow soldering.
In case of moisture absorption, the devices will
recover to the former condition by drying under the
following condition:
192 hours at 40 °C + 5 °C/ -0 °C and < 5 % RH
(dry air/ nitrogen) or
96 hours at 60 °C +5 °C and < 5 % RH for all device
containers or
24 hours at 100 °C +5 °C not suitable for reel
or tubes.
An EIA JEDEC Standard JESD22-A112 Level 2 label
is included on all dry bags.
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Proper storage and handling procedures should be
followed to prevent ESD damage to the devices especially when they are removed from the Antistatic
Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging.
Vishay Semiconductors Standard
Bar-Code Labels
The Vishay Semiconductors standard bar-code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Semiconductors specific data.
Document Number 83199
Rev. 1.6, 20-Jan-05
TLMB / G / O / P / S / Y2100
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83199
Rev. 1.6, 20-Jan-05
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