VISHAY TLMO2000

TLMO / S / Y2000
Vishay Semiconductors
Low Current MiniLED
Description
The new low current MiniLED Series have been
designed in a small white SMT package. The feature
of the device is the very small package 2.3 mm x 1.3
mm x 1.4 mm and the low forward current. The MinLED is an obvious solution for small-scale, highpower products that are expected to work reliability in
an arduous environment. This is often the case in
automotive and industrial application.
e3 Pb
19226
Features
Pb-free
• SMD LEDs with exceptional brightness
•
•
•
•
•
•
Luminous intensity categorized
Compatible with automatic placement equipment
IR reflow soldering
Available in 8 mm tape
Low profile package
Non-diffused lens: Excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packing unit
IVmax/IVmin ≤ 2.0, optional ≤ 1.6
• Lead-free device
Applications
Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in
telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
Parts Table
Part
Color, Luminous Intensity
Angle of Half Intensity (±ϕ)
Technology
TLMS2000
Red, IV = 4.5 mcd (typ.)
60 °
AlInGaP on GaAs
TLMO2000
Orange, IV = 9.0 mcd (typ.)
60 °
AlInGaP on GaAs
TLMY2000
Yellow, IV = 7.1 mcd (typ.)
60 °
AlInGaP on GaAs
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLMS200. ,TLMO200. ,TLMY200.
Parameter
Test condition
Reverse voltage
DC Forward current
Tamb ≤ 100 °C
Surge forward current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 100 °C
Junction temperature
Operating temperature range
Document Number 83185
Rev. 1.3, 21-Jan-05
Symbol
Value
VR
5
Unit
V
IF
15
mA
IFSM
0.1
A
PV
40
mW
Tj
125
°C
Tamb
- 40 to + 100
°C
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TLMO / S / Y2000
Vishay Semiconductors
Parameter
Test condition
Symbol
Value
Tstg
- 40 to + 100
°C
Storage temperature range
Unit
Soldering temperature
according to IPC 9501
Tsd
245
°C
Thermal resistance junction/
ambient
mounted on PC board
RthJA
580
K/W
(pad size > 5 mm2)
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLMS200.
Symbol
Min
Typ.
Luminous intensity 1)
Parameter
IF = 2 mA
IV
2
4.5
mcd
Dominant wavelength
IF = 2 mA
λd
630
nm
Peak wavelength
IF = 2 mA
λp
643
nm
Angle of half intensity
IF = 2 mA
ϕ
± 60
deg
Forward voltage
IF = 2 mA
VF
1.8
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
Test condition
Max
2.2
5
Unit
V
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 2.0
Orange
TLMO200.
Symbol
Min
Typ.
Luminous intensity 1)
Parameter
IF = 2 mA
Test condition
IV
4
9
Dominant wavelength
IF = 2 mA
λd
598
605
Max
Unit
mcd
611
nm
Peak wavelength
IF = 2 mA
λp
610
nm
Angle of half intensity
IF = 2 mA
ϕ
± 60
deg
Forward voltage
IF = 2 mA
VF
1.8
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
2.2
5
V
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 2.0
Yellow
TLMY200.
Symbol
Min
Typ.
Luminous intensity 1)
Parameter
IF = 2 mA
Test condition
IV
3.2
7.1
Dominant wavelength
IF = 2 mA
λd
581
588
Max
Unit
mcd
594
nm
Peak wavelength
IF = 2 mA
λp
590
nm
Angle of half intensity
IF = 2 mA
ϕ
± 60
deg
Forward voltage
IF = 2 mA
VF
1.8
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
V
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 2.0
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5
2.2
Document Number 83185
Rev. 1.3, 21-Jan-05
TLMO / S / Y2000
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
100
100
PV - Power Dissipation (mW)
Red
I F - Forward Current ( mA )
80
60
40
20
10
1
1.0
0
0
20
40
60
80
100
120
Tamb - Ambient Temperature ( °C )
18556
Figure 1. Power Dissipation vs. Ambient Temperature
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Tamb - Ambient Temperature ( °C )
10°
Figure 5. Relative Intensity vs. Wavelength
20°
1000
40°
1.0
0.9
50°
0.8
60°
70°
0.7
I F – Forward Current ( A )
I V re l - Relative Luminous Intensity
30°
tp/T= 0.01
0.02
0.05
0.1
100
0.2
0.5
80°
0.6
0.4
0.2
0
0.2
0.4
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Rev. 1.3, 21-Jan-05
10
0.01
0.6
95 10319
Document Number 83185
3.0
O – Wavelength ( nm )
18266
Figure 2. Forward Current vs. Ambient Temperature
0°
2.5
1.2
1.1
Orange
1.0
Yellow
Red
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
540 560 580 600 620 640 660 680 700
IVrel– Relative Luminous Intensity
I F - Forward Current ( mA )
35
2.0
Figure 4. Forward Current vs. Forward Voltage
40
18557
1.5
VF - Forward V oltage ( V )
17509
17557
1
0.10
1.00
10.00
100.00
tp – Pulse Duration ( ms )
Figure 6. Forward Current vs. Pulse Length
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TLMO / S / Y2000
Vishay Semiconductors
IVrel - Relative Luminous Intensity
2.50
Yellow
2.25
2.00
Orange
1.75
Red
1.50
1.25
1.00
0.75
0.50
0.25
0
-40
18251
-20
0
20
40
60
80
Tamb - Ambient Temperature ( °C )
100
Figure 7. Rel. Luminous Intensity vs. Ambient Temperature
2.00
Yellow
VFrel - Forward Voltage
1.95
Orange
1.90
Red
1.85
1.80
1.75
1.70
1.65
-40
18252
-20
0
20
40
60
80
100
Tamb - Ambient Temperature ( ° C )
Figure 8. Forward Voltage vs. Ambient Temperature
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Document Number 83185
Rev. 1.3, 21-Jan-05
TLMO / S / Y2000
Vishay Semiconductors
Package Dimensions in mm
16892
Document Number 83185
Rev. 1.3, 21-Jan-05
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TLMO / S / Y2000
Vishay Semiconductors
Reel Dimensions
16938
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Document Number 83185
Rev. 1.3, 21-Jan-05
TLMO / S / Y2000
Vishay Semiconductors
Tape Dimensions
16939
Leader and Trailer
GS08 = 3000 pcs
Document Number 83185
Rev. 1.3, 21-Jan-05
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