TLMO / S / Y2000 Vishay Semiconductors Low Current MiniLED Description The new low current MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm and the low forward current. The MinLED is an obvious solution for small-scale, highpower products that are expected to work reliability in an arduous environment. This is often the case in automotive and industrial application. e3 Pb 19226 Features Pb-free • SMD LEDs with exceptional brightness • • • • • • Luminous intensity categorized Compatible with automatic placement equipment IR reflow soldering Available in 8 mm tape Low profile package Non-diffused lens: Excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packing unit IVmax/IVmin ≤ 2.0, optional ≤ 1.6 • Lead-free device Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLMS2000 Red, IV = 4.5 mcd (typ.) 60 ° AlInGaP on GaAs TLMO2000 Orange, IV = 9.0 mcd (typ.) 60 ° AlInGaP on GaAs TLMY2000 Yellow, IV = 7.1 mcd (typ.) 60 ° AlInGaP on GaAs Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMS200. ,TLMO200. ,TLMY200. Parameter Test condition Reverse voltage DC Forward current Tamb ≤ 100 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 100 °C Junction temperature Operating temperature range Document Number 83185 Rev. 1.3, 21-Jan-05 Symbol Value VR 5 Unit V IF 15 mA IFSM 0.1 A PV 40 mW Tj 125 °C Tamb - 40 to + 100 °C www.vishay.com 1 TLMO / S / Y2000 Vishay Semiconductors Parameter Test condition Symbol Value Tstg - 40 to + 100 °C Storage temperature range Unit Soldering temperature according to IPC 9501 Tsd 245 °C Thermal resistance junction/ ambient mounted on PC board RthJA 580 K/W (pad size > 5 mm2) Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMS200. Symbol Min Typ. Luminous intensity 1) Parameter IF = 2 mA IV 2 4.5 mcd Dominant wavelength IF = 2 mA λd 630 nm Peak wavelength IF = 2 mA λp 643 nm Angle of half intensity IF = 2 mA ϕ ± 60 deg Forward voltage IF = 2 mA VF 1.8 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) Test condition Max 2.2 5 Unit V V 15 pF in one Packing Unit IVmax/IVmin ≤ 2.0 Orange TLMO200. Symbol Min Typ. Luminous intensity 1) Parameter IF = 2 mA Test condition IV 4 9 Dominant wavelength IF = 2 mA λd 598 605 Max Unit mcd 611 nm Peak wavelength IF = 2 mA λp 610 nm Angle of half intensity IF = 2 mA ϕ ± 60 deg Forward voltage IF = 2 mA VF 1.8 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 2.2 5 V V 15 pF in one Packing Unit IVmax/IVmin ≤ 2.0 Yellow TLMY200. Symbol Min Typ. Luminous intensity 1) Parameter IF = 2 mA Test condition IV 3.2 7.1 Dominant wavelength IF = 2 mA λd 581 588 Max Unit mcd 594 nm Peak wavelength IF = 2 mA λp 590 nm Angle of half intensity IF = 2 mA ϕ ± 60 deg Forward voltage IF = 2 mA VF 1.8 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) V V 15 pF in one Packing Unit IVmax/IVmin ≤ 2.0 www.vishay.com 2 5 2.2 Document Number 83185 Rev. 1.3, 21-Jan-05 TLMO / S / Y2000 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 100 PV - Power Dissipation (mW) Red I F - Forward Current ( mA ) 80 60 40 20 10 1 1.0 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature ( °C ) 18556 Figure 1. Power Dissipation vs. Ambient Temperature 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature ( °C ) 10° Figure 5. Relative Intensity vs. Wavelength 20° 1000 40° 1.0 0.9 50° 0.8 60° 70° 0.7 I F – Forward Current ( A ) I V re l - Relative Luminous Intensity 30° tp/T= 0.01 0.02 0.05 0.1 100 0.2 0.5 80° 0.6 0.4 0.2 0 0.2 0.4 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Rev. 1.3, 21-Jan-05 10 0.01 0.6 95 10319 Document Number 83185 3.0 O – Wavelength ( nm ) 18266 Figure 2. Forward Current vs. Ambient Temperature 0° 2.5 1.2 1.1 Orange 1.0 Yellow Red 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 560 580 600 620 640 660 680 700 IVrel– Relative Luminous Intensity I F - Forward Current ( mA ) 35 2.0 Figure 4. Forward Current vs. Forward Voltage 40 18557 1.5 VF - Forward V oltage ( V ) 17509 17557 1 0.10 1.00 10.00 100.00 tp – Pulse Duration ( ms ) Figure 6. Forward Current vs. Pulse Length www.vishay.com 3 TLMO / S / Y2000 Vishay Semiconductors IVrel - Relative Luminous Intensity 2.50 Yellow 2.25 2.00 Orange 1.75 Red 1.50 1.25 1.00 0.75 0.50 0.25 0 -40 18251 -20 0 20 40 60 80 Tamb - Ambient Temperature ( °C ) 100 Figure 7. Rel. Luminous Intensity vs. Ambient Temperature 2.00 Yellow VFrel - Forward Voltage 1.95 Orange 1.90 Red 1.85 1.80 1.75 1.70 1.65 -40 18252 -20 0 20 40 60 80 100 Tamb - Ambient Temperature ( ° C ) Figure 8. Forward Voltage vs. Ambient Temperature www.vishay.com 4 Document Number 83185 Rev. 1.3, 21-Jan-05 TLMO / S / Y2000 Vishay Semiconductors Package Dimensions in mm 16892 Document Number 83185 Rev. 1.3, 21-Jan-05 www.vishay.com 5 TLMO / S / Y2000 Vishay Semiconductors Reel Dimensions 16938 www.vishay.com 6 Document Number 83185 Rev. 1.3, 21-Jan-05 TLMO / S / Y2000 Vishay Semiconductors Tape Dimensions 16939 Leader and Trailer GS08 = 3000 pcs Document Number 83185 Rev. 1.3, 21-Jan-05 www.vishay.com 7