SUR50N025-05P Vishay Siliconix New Product N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0052 @ VGS = 10 V 89 0.0076 @ VGS = 4.5 V 80 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 30 nC APPLICATIONS D DC/DC Conversion, Low-Side − Desktop PC − Notebook PC TO-252 Reverse Lead DPAK D G Drain Connected to Tab G D S Top View S Ordering Information: SUR50N025-05P—E3 (Lead (Pb)-Free) SUR50N025-05P-T4—E3 (Lead (Pb)-Free, alternate tape orientation) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 25 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) TA = 25_C 75a, e ID 36b, c 30b, c TA = 70_C Pulsed Drain Current IDM Continuous Source-Drain Source Drain Diode Current Avalanche Current Pulse TC = 25_C TA = 25_C L = 0.1 0 1 mH Single Pulse Avalanche Energy TC = 70_C TA = 25_C 55 IS 7.7b, c IAS 45 EAS 101 mJ 83a 58a PD W 11.5b, c 8.0b, c TA = 70_C Operating Junction and Storage Temperature Range A 100 TC = 25_C Maximum Power Dissipation V 89a, e TC = 25_C TC = 70_C Unit TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case Symbol Typical Maximum t p 10 sec RthJA 10 13 Steady State RthJC 1.5 1.8 Unit _C/W Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 90 _C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 73379 s-50933—Rev. A, 09-May-05 www.vishay.com 1 SUR50N025-05P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = 250 mA 25 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient DVDS/TJ DVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs 20 ID = 250 mA VGS(th) Temperature Coefficient V mV/_C −6.0 2.4 V VDS = 0 V, VGS = "20 V "100 nA VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55_C 10 VDS w 5 V, VGS = 10 V 1.4 50 mA A VGS = 10 V, ID = 20 A 0.0042 0.0052 VGS = 4.5 V, ID = 15 A 0.0062 0.0076 VDS = 15 V, ID = 15 A 65 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 3600 VDS = 12 V, VGS = 0 V, f = 1 MHz td(off) pF 430 VDS = 12 V, VGS = 10 V, ID = 50 A 63 95 30 45 VDS = 12 V, VGS = 4.5 V, ID= 50 A 10.5 f = 1 MHz VDD = 12 V, RL = 0.24 W ID ^ 50 A, VGEN = 4.5 V, Rg = 1 W 0.5 1.0 1.5 24 36 13 20 24 36 tf 7.5 12 td(on) 11 17 tr td(off) nC 10.5 td(on) tr 790 VDD = 12 V, RL = 0.24 W ID ^ 50 A, VGEN = 10 V, Rg = 1 W tf 11 17 29 44 8 12 W ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25_C 55 100 IS = 30 A IF = 20 A, A di/dt = 100 A/ms, A/ms TJ = 25_C A 0.9 1.5 V 34 51 ns 25 38 nC 17 17 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73379 s-50933—Rev. A, 09-May-05 SUR50N025-05P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 4V VGS = 10 thru 5 V 80 I D − Drain Current (A) I D − Drain Current (A) Transfer Characteristics 20 60 40 20 16 12 8 TC = 125_C 4 2V 25_C 3V −55_C 0 0.0 0.4 0.8 1.2 1.6 0 1.0 2.0 1.5 VDS − Drain-to-Source Voltage (V) 4800 0.010 4000 C − Capacitance (pF) rDS(on) − On-Resistance (mW) On-Resistance vs. Drain Current and Gate Voltage 0.008 VGS = 4.5 V 0.006 VGS = 10 V 0.004 Ciss Coss 0 80 Capacitance 1600 0.000 60 100 Crss 0 5 ID − Drain Current (A) 1.6 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 1.8 8 VDS = 12 V 6 10 15 20 25 VDS − Drain-to-Source Voltage (V) Gate Charge 10 3.5 2400 800 40 3.0 3200 0.002 20 2.5 VGS − Gate-to-Source Voltage (V) 0.012 0 2.0 VDS = 18 V 4 2 On-Resistance vs. Junction Temperature ID = 20 A VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0 8 16 24 32 40 48 Qg − Total Gate Charge (nC) Document Number: 73379 s-50933—Rev. A, 09-May-05 56 64 0.6 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) www.vishay.com 3 SUR50N025-05P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.030 TJ = 150_C 10 I S − Source Current (A) rDS(on) − Drain-to-Source On-Resistance (W) 100 1 0.1 TJ = 25_C 0.01 ID = 20 A 0.025 0.020 0.015 0.010 TJ = 125_C 0.005 TJ = 25_C 0.000 0.001 0.00 0.2 0.4 0.6 0.8 1.0 2 1.2 3 4 VSD − Source-to-Drain Voltage (V) 5 6 7 8 9 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.6 720 0.3 600 ID = 250 mA 480 Power (W) VGS(th) (V) 0.0 −0.3 TA = 25_C 360 −0.6 240 −0.9 120 −1.2 −50 −25 0 25 50 75 100 125 150 0 0.001 175 0.01 0.1 TJ − Temperature (_C) 10 1 100 1000 Time (sec) 1000 Safe Operating Area, Junction-to-Case *Limited by rDS(on) I D − Drain Current (A) 100 10 ms 100 ms 10 1 ms 10 ms 100 ms, dc 1 TC = 25_C Single Pulse 0.1 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73379 s-50933—Rev. A, 09-May-05 SUR50N025-05P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating* 100 75 60 60 Power ID − Drain Current (A) 80 40 Package Limited 45 30 20 15 0 0 0 25 50 75 100 125 150 175 TC − Case Temperature (_C) 1000 IC − Peak Avalanche Current (A) Power De-Rating 90 25 50 75 100 125 150 175 TC − Case Temperature (_C) Single Pulse Avalanche Capability 100 10 1 TA + L @ ID BV * V DD 0.1 0.00001 0.0001 0.001 0.01 0.1 1 TA − Time In Avalanche (sec) *The power dissipation PD is based on TJ(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73379 s-50933—Rev. A, 09-May-05 www.vishay.com 5 SUR50N025-05P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 0.02 0.01 10−4 10−3 4. Surface Mounted 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 3. TJM − TA = PDMZthJA(t) Single Pulse 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73379. www.vishay.com 6 Document Number: 73379 s-50933—Rev. A, 09-May-05