STD83003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix ”T4”) THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STD83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STD93003, its complementary PNP transistor. 1 1 2 3 IPAK TO-251 (Suffix ”-1”) 3 DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) IC I CM IB Emitter-Base Voltage o (I C = 0, IB = 0.75 A, t p < 10µs, Tj < 150 C) Collector Current Collector Peak Current (tp < 5 ms) Base Current I BM P t ot T stg Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature V EBO Tj Max. Operating Junction Temperature October 2002 Value 700 400 Uni t V V V (BR)EBO V 1.5 3 0.75 A A A 1.5 20 -65 to 150 A W o C 150 o C 1/8 STD83003 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 6.25 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV Parameter Test Cond ition s Min. Collector Cut-off Current (V BE = -1.5V) V CE = 700V V CE = 700V Emitter-Base Breakdown Voltage (I C = 0) I E = 10 mA 12 V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 10 mA L = 25 mH 400 V (BR)EBO Typ . o T j = 125 C Max. Un it 1 5 mA mA 18 V V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 0.5 A I C = 0.35 A I B = 0.1 A IB = 50 mA 0.5 1 V V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 0.5 A I B = 0.1 A 1 V DC Current G ain I C = 10 mA I C = 0.35 A IC = 1 A V CE = 5 V V CE = 5 V V CE = 5 V 10 16 4 25 32 VCC = 125 V I B2 = -70 mA (see figure 2) 1.5 100 2.2 0.2 2.9 h FE∗ tr ts tf RESISTIVE LO AD Rise Time Storage Time Fall T ime I C = 0.35 A I B1 = 70 mA T p ≥ 25 µs ts tf INDUCTIVE LOAD Storage Time Fall T ime I C = 0.5 A V BE(of f) = -5 V V c la mp = 300 V ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/8 I B1 = 0.1 A L = 10 mH (see figure 1) 450 90 ns µs µs ns ns STD83003 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/8 STD83003 Resistive Load Fall Time Resistive Load Storage Time Inductive Load Fall Time Inductive Load Storage Time Reverse Biased SOA 4/8 STD83003 Figure 1: Inductive Load Switching Test Circuit. 1) F ast electronic switch 2) Non-inductive Resist or 3) F ast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) F ast electronic switch 2) Non-inductive Resist or 5/8 STD83003 TO-251 (IPAK) MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 B3 0.85 B5 B6 C 0.033 0.30 0.012 0.95 0.45 0.60 0.037 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.237 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 15.90 16.30 0.626 0.642 L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 L2 V1 0.80 10 o 1.00 0.047 0.031 10 0.039 o P032N_E 6/8 STD83003 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 7/8 STD83003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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