STMICROELECTRONICS STP75NE75

STP75NE75
STP75NE75FP

N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FP
STripFET POWER MOSFET
TYPE
V DSS
R DS(on)
ID
STP75NE75
STP75NE75FP
75 V
75 V
< 0.013 Ω
< 0.013 Ω
75 A
40 A
■
■
■
■
TYPICAL RDS(on) = 0.01 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
1
3
2
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ DC MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP75NE75
V DS
V DGR
Un it
STP75NE75FP
Drain-source Voltage (VGS = 0)
75
V
Drain- gate Voltage (RGS = 20 kΩ)
75
V
± 20
V GS
ID
Gate-source Voltage
Drain Current (continuous) at T c = 25 o C
75
40
V
A
ID
Drain Current (continuous) at T c = 100 oC
53
28
A
Drain Current (pulsed)
300
160
A
Total Dissipation at T c = 25 oC
160
50
W
Derating F actor
1.06
0.37
W /o C
I DM (•)
P tot
V ISO
Insulation Withstand Voltage (DC)
dv/dt
Peak Diode Recovery voltage slope
Ts tg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 1999

2000
7
-65 to 175
175
V
V/ns
o
o
C
C
( 1) ISD ≤75 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
STP75NE75/FP
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
TO-220
TO-220FP
0.94
2.7
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
75
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 30V)
200
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
75
Unit
V
T c = 125 oC
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
ID = 37.5 A
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
Typ.
Max.
Unit
2
3
4
V
0.01
0.013
Ω
75
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/9
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =37.5 A
V GS = 0
Min.
Typ.
Max.
Unit
40
S
5300
850
310
pF
pF
pF
STP75NE75/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on Delay T ime
Rise Time
V DD = 40 V
I D = 40 A
R G = 4.7 Ω
V GS = 10 V
(Resistive Load, see fig. 3)
32
130
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 60 V ID = 75 A V GS = 10 V
150
30
62
200
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
t d(of f)
tf
Turn-off Delay T ime
Fall T ime
V DD = 40 V
I D = 40 A
V GS = 10 V
R G = 4.7 Ω
(Resistive Load, see fig. 3)
150
45
ns
ns
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall T ime
Cross-over Time
V clamp = 60 V
I D = 75 A
V GS = 4.5 V
R G = 4.7 Ω
(Induct ive Load, see fig. 5)
35
60
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 75 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 75 A
di/dt = 100 A/µs
T j = 150 o C
V DD = 30 V
(see test circuit, fig. 5)
t rr
Q rr
I RRM
Min.
Typ.
Max.
Unit
43
170
A
A
1.5
V
V GS = 0
130
ns
0.6
µC
9
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP75NE75/FP
Thermal Impedance for TO-220
Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP75NE75/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP75NE75/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP75NE75/FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP75NE75/FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
8/9
L4
STP75NE75/FP
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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