STW20NC50 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE STW20NC50 ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ■ ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 18.4 A ID Drain Current (continuos) at TC = 100°C 11.6 A Drain Current (pulsed) 73.6 A Total Dissipation at TC = 25°C 220 W Derating Factor 1.75 W/°C 2 V/ns –65 to 150 °C 150 °C VDS VDGR VGS IDM (●) PTOT dv/dt(1) Tstg Tj Parameter Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area May 2001 (1)ISD ≤18.4A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/8 STW20NC50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Tl 0.57 °C/W 30 °C/W Thermal Resistance Case-sink Typ 0.1 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 20 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 960 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 500 Unit V VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA ±100 nA VGS = ±30V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 9 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 2 3 4 V 0.22 0.27 Ω 18.4 A DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 9A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 18 S 2980 pF Ciss Input Capacitance Coss Output Capacitance 410 pF Crss Reverse Transfer Capacitance 58 pF STW20NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Test Conditions Min. VDD = 250V, ID = 10A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 20A, VGS = 10V Typ. Max. Unit 29 ns 21 ns Qg Total Gate Charge Qgs Gate-Source Charge 14.7 nC Qgd Gate-Drain Charge 41.7 nC 95 128 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time Test Conditions Min. VDD = 400V, ID = 20A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 20 ns tf Fall Time 21 ns tc Cross-over Time 58 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 18.4 A ISDM (2) Source-drain Current (pulsed) 73.6 A VSD (1) Forward On Voltage ISD = 18.4A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 20A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) Qrr IRRM 480 ns Reverse Recovery Charge 5 µC Reverse Recovery Current 21 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 STW20NC50 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STW20NC50 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW20NC50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW20NC50 TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.85 5.15 0.19 TYP. MAX. D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 0.20 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 3.55 3.65 0.14 0.143 7/8 STW20NC50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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