STGF7NB60SL N-CHANNEL 7A - 600V - TO-220FP PowerMESH™ IGBT Figure 1: Package Table 1: General Features TYPE STGF7NB60SL ■ ■ ■ ■ ■ VCES VCE(sat) (Max) @25°C IC @100°C 200 V < 0.045 Ω 40 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). 3 1 2 Figure 2: Internal Schematic Diagram APPLICATIONS LIGHT DIMMER ■ STATIC RELAYS ■ Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGF7NB60SL GF7NB60SL TO-220FP TUBE Rev. 2 June 2004 1/9 STGF7NB60SL Table 3: Absolute Maximum ratings Symbol Parameter Value Symbol VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C 15 A IC Collector Current (continuous) at 100°C 7 A Collector Current (pulsed) 20 A ICM (1) PTOT Total Dissipation at TC = 25°C 25 W Derating Factor 0.2 W/°C 2500 V – 55 to 150 °C 5 °C/W 62.5 °C/W VISO Insulation Withstand Voltage A.C. Tstg Storage Temperature Tj Operating Junction Temperature (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off Symbol Parameter VBR(CES) Collectro-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 600 V VBR(ECS) Emitter-Collector Breakdown Voltage IC = 1mA, VGE = 0 20 V Collector-Emitter Leakage Current (VCE = 0) VGE = Max Rating Tc=25°C Tc=125°C 10 100 µA µA Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20 V , VCE = 0 ±100 nA Max. Unit 2.4 V 1.6 V V ICES IGES Test Conditions Min. Typ. Max. Unit Table 6: On Symbol VGE(th) VCE(SAT) 2/9 Parameter Test Conditions Gate Threshold Voltage VCE= VGE, IC= 250 µA Collector-Emitter Saturation Voltage VGE=4.5 V, IC= 7A, Tj= 25°C VGE=4.5 V, IC= 7A, Tj= 125°C Min. Typ. 1.2 1.2 1.1 STGF7NB60SL ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter Test Conditions Forward Transconductance VCE = 15 V, IC= 7 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc ICL gfs tscw Min. Typ. Max. Unit 5 S VCE = 25V, f = 1 MHz, VGE = 0 800 60 10 pF pF pF Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 7 A, VGE = 5V (see Figure 20) 16 2.5 8.5 Turn-Off SOA Minimum Current Vclamp = 480 V , Tj = 125°C RG = 1 KΩ, VGE=5V Short Circuit Withstand Time Vce = 0.5 VBR(CES), VGE=5V, Tj = 125°C , RG = 1KΩ 22 20 nC nC nC A 14 µs Table 8: Switching On Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Current Rise Time VCC = 480 V, IC = 7 A RG=1KΩ , VGE = 5 V (see Figure 18) 1.1 0.25 µs µs Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 7 A RG=1KΩ VGE = 5 V,Tj = 125°C 45 2.7 A/µs mJ Table 9: Switching Off Symbol tc tr(Voff) td(off) tf Eoff(**) tc tr(Voff) td(off) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Test Conditions Vcc = 480 V, IC = 7 A, RGE = 1KΩ , VGE = 5 V (see Figure 18) Min. Typ. Max. Unit 2.7 µs 1.6 µs Delay Time 5.2 µs Current Fall Time 1.1 µs Turn-off Switching Loss 4.1 mJ 4.4 µs 2.4 µs Cross-over Time Off Voltage Rise Time Delay Time Vcc = 480 V, IC = 7 A, RGE = 1KΩ , VGE = 5 V Tj = 125 °C (see Figure 18) 6.4 µs Fall Time 1.7 µs Turn-off Switching Loss 7.1 mJ (**)Turn-off losses include also the tail of the collector current. 3/9 STGF7NB60SL Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Collector-Emitter On Voltage vs Temperature 4/9 STGF7NB60SL Figure 9: Gate Thereshold vs Temperature Figure 12: Normalized Breakdown Voltage vs Temperature Figure 10: Capacitance Variations Figure 13: Gate Charge vs Gate-Emitter Voltage Figure 11: Total Switching Losses vs Gate Resistance Figure 14: Total Switching Losses vs Temperature 5/9 STGF7NB60SL Figure 15: Total Switching Losses vs Collector Current Figure 16: Thermal Impedance 6/9 Figure 17: Turn-Off SOA STGF7NB60SL Figure 18: Test Circuit for Inductive Load Switching Figure 20: Gate Charge Test Circuit Figure 19: Switching Waveforms 7/9 STGF7NB60SL Table 10: Revision History 8/9 Date Revision 04-June-2004 2 Description of Changes Stylesheet update. No content change STGF7NB60SL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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