STMICROELECTRONICS STP11NK50

STP11NK50Z - STP11NK50ZFP
STB11NK50Z
N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
STB11NK50Z
STP11NK50Z
STP11NK50ZFP
■
■
■
■
■
■
■
VDSS
RDS(on)
ID
Pw
500 V
500 V
500 V
< 0.52 Ω
< 0.52 Ω
< 0.52 Ω
10 A
10 A
10 A
125 W
125 W
30 W
TYPICAL RDS(on) = 0.48 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (D2PAK VERSION)
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
3
1
TO-220
2
TO-220FP
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB11NK50ZT4
B11NK50Z
D2PAK
TAPE & REEL
STP11NK50Z
P11NK50Z
TO-220
TUBE
STP11NK50ZFP
P11NK50ZFP
TO-220FP
TUBE
June 2003
1/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
TO-220 /
VDS
VDGR
VGS
Unit
D2PAK
Drain-source Voltage (VGS = 0)
TO-220FP
500
V
Drain-gate Voltage (RGS = 20 kΩ)
500
V
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
10
10(*)
A
ID
Drain Current (continuous) at TC = 100°C
6.3
6.3(*)
A
Drain Current (pulsed)
40
40(*)
A
Total Dissipation at TC = 25°C
125
30
W
1
0.24
W/°C
IDM ()
PTOT
Derating Factor
VESD(G-S)
dv/dt (1)
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
4000
Peak Diode Recovery voltage slope
Viso
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature
Storage Temperature
V
4.5
V/ns
--
2500
V
-55 to 150
-55 to 150
°C
°C
( ) Pulse width limited by safe operating area
(1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 / D2PAK
TO-220FP
1
4.2
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
°C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
10
A
190
mJ
GATE-SOURCE ZENER DIODE
Symbol
BVGSO
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 5 A
V(BR)DSS
500
Unit
3
V
3.75
4.5
V
0.48
0.52
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Test Conditions
Min.
VDS =15V, ID = 5 A
VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 400V
7.7
S
1390
173
42
pF
pF
pF
110
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250 V, ID = 5.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID = 11.4 A,
VGS = 10V
Min.
Typ.
Max.
14.5
18
Unit
ns
ns
49
10
25
68
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 250 V, ID = 5.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
41
15
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 400V, ID = 11.4 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
11.5
12
27
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 10 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 10 A, di/dt = 100A/µs
VDD = 36V, Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Min.
Typ.
308
2.4
16
Max.
Unit
10
40
A
A
1.6
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
Safe Operating Area For TO-220 / D2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220 / D2PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
Source-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
6/12
Normalized BVDSS vs Temperature
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
TO-220 MECHANICAL DATA
DIM.
8/12
mm.
MIN.
TYP
inch
MAX.
MIN.
4.60
0.173
TYP.
MAX.
A
4.40
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
L30
28.90
0.645
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
0.409
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
9/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
4º
3
V2
0.4
10/12
1
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
2
D PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.075 0.082
0.933 0.956
* on sales type
11/12
STP11NK50Z - STP11NK50ZFP - STB11NK50Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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