ETC STD4NK60ZT4

STP4NK60Z - STP4NK60ZFP
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
N-CHANNEL 600V - 1.76Ω - 4A TO-220/FP/DPAK/IPAK/D2PAK
Zener-Protected SuperMESH Power MOSFET
TYPE
STP4NK60Z
STP4NK60ZFP
STB4NK60Z
STD4NK60Z
STD4NK60Z-1
■
■
■
■
■
■
VDSS
600
600
600
600
600
V
V
V
V
V
R DS(on)
<2Ω
<2Ω
<2Ω
<2Ω
<2Ω
ID
4
4
4
4
4
A
A
A
A
A
Pw
70
25
70
70
70
W
W
W
W
W
TYPICAL RDS(on) = 1.76 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
3
2
3
1
TO-220
D 2PAK
1
TO-220FP
3
3
2
1
DPAK
1
IPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP4NK60Z
P4NK60Z
TO-220
TUBE
STP4NK60ZFP
P4NK60ZFP
TO-220FP
TUBE
STB4NK60ZT4
B4NK60Z
D 2PAK
TAPE & REEL
STD4NK60ZT4
D4NK60Z
DPAK
TAPE & REEL
STD4NK60Z-1
D4NK60Z
IPAK
TUBE
September 2002
1/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP4NK60Z
STB4NK60Z
VDS
VDGR
VGS
ID
ID
Unit
STD4NK60Z
STD4NK60Z-1
STP4NK60ZFP
Drain-source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at TC = 25°C
4
4 (*)
4
A
Drain Current (continuous) at TC = 100°C
2.5
2.5 (*)
2.5
A
IDM (l )
Drain Current (pulsed)
16
16 (*)
16
A
PTOT
Total Dissipation at TC = 25°C
70
25
70
W
0.56
0.2
0.56
W/°C
Derating Factor
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1)
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-
3000
V
4.5
V/ns
2500
-
V
°C
°C
-55 to 150
-55 to 150
( l ) Pulse width limi ted by safe operating area
(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-amb
Tl
TO-220
D 2PAK
TO-220FP
DPAK
IPAK
1.78
5
1.78
°C/W
100
°C/W
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
62.5
°C
300
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
4
A
120
mJ
GATE-SOURCE ZENER DIODE
Symbol
BVGSO
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
V(BR)DSS
Parameter
Test Conditions
Min.
Typ.
Max.
600
Unit
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (V GS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50µA
R DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2 A
3
V
3.75
4.5
V
1.76
2
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
C iss
Coss
Crss
C oss eq. (3)
Parameter
Test Conditions
Forward Transconductance
VDS = 15 V, ID = 2 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Min.
3
S
VDS = 25V, f = 1 MHz, VGS = 0
510
67
13
pF
pF
pF
VGS = 0V, V DS = 0V to 480V
38.5
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 2 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
12
9.5
Qg
Qgs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, I D = 4 A,
VGS = 10V
18.8
3.8
9.8
26
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
Parameter
Test Condition s
Min.
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 300 V, I D = 2 A
R G = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
29
16.5
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480V, ID = 4A,
R G = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
12
12
19.5
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 4 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4 A, di/dt = 100A/µs
VDD = 24V, Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
136
415
6.1
Max.
Unit
4
16
A
A
1.6
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
SafeOperatingAreaForTO-220/DPAK/IPAK/D2PAK
Safe Operating Area For TO-220FP
Thermal
Impedance
For
TO-220/DPAK/IPAK/D2PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
Source-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
6/15
Normalized BVDSS vs Temperature
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
F
0.61
0.88
0.024
0.027
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
0.106
G1
2.4
2.7
0.094
H2
10.0
10.40
0.393
L2
0.409
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
8/15
L4
P011C
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
4.6
0.173
TYP.
MAX.
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
0.409
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L5
L2
L4
9/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
L4
V2
0.8
0.60
0
o
0.031
1.00
8
o
0.024
0
o
0.039
0o
P032P_B
10/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
C2
0.48
0.6
0.019
0.023
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
11/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
12/15
1
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN. MAX.
A
B
1.5
C
12.8
D
20.2
G
N
24.4
100
330
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
D
15.7
1.5
15.9
1.6
0.618 0.626
0.059 0.063
D1
E
1.59
1.65
1.61
1.85
0.062 0.063
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
P1
3.9
11.9
4.1
12.1
0.153 0.161
0.468 0.476
P2
R
1.9
50
2.1
0.075 0.082
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
inch
MIN. MAX.
BASE QTY
1000
12.992
0.059
13.2
0.504 0.520
0795
26.4
0.960 1.039
3.937
30.4
1.197
BULK QTY
1000
MAX.
0.933 0.956
13/15
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
DIM.
mm
inch
MIN.
MAX.
MIN.
6.8
10.4
7
10.6
0.267 0.275
0.409 0.417
B1
D
1.5
12.1
1.6
0.476
0.059 0.063
D1
1.5
E
1.65
1.85
0.065 0.073
F
K0
7.4
2.55
7.6
2.75
0.291 0.299
0.100 0.108
P0
P1
3.9
7.9
4.1
8.1
0.153 0.161
0.311 0.319
P2
1.9
2.1
0.075 0.082
A0
B0
R
40
W
15.7
* on sales type
14/15
MAX.
0.059
1.574
16.3
0.618
0.641
inch
MIN.
330
MAX.
A
B
1.5
C
D
12.8
20.2
13.2
0.504 0.520
0.795
G
16.4
18.4
0.645 0.724
N
50
T
TAPE MECHANICAL DATA
MAX.
BASE QTY
2500
12.992
0.059
1.968
22.4
0.881
BULK QTY
2500
STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
 The ST logo is a registered trademark of STMicroelectronics
 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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