STP4NK60Z - STP4NK60ZFP STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL 600V - 1.76Ω - 4A TO-220/FP/DPAK/IPAK/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP4NK60Z STP4NK60ZFP STB4NK60Z STD4NK60Z STD4NK60Z-1 ■ ■ ■ ■ ■ ■ VDSS 600 600 600 600 600 V V V V V R DS(on) <2Ω <2Ω <2Ω <2Ω <2Ω ID 4 4 4 4 4 A A A A A Pw 70 25 70 70 70 W W W W W TYPICAL RDS(on) = 1.76 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. 3 2 3 1 TO-220 D 2PAK 1 TO-220FP 3 3 2 1 DPAK 1 IPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP4NK60Z P4NK60Z TO-220 TUBE STP4NK60ZFP P4NK60ZFP TO-220FP TUBE STB4NK60ZT4 B4NK60Z D 2PAK TAPE & REEL STD4NK60ZT4 D4NK60Z DPAK TAPE & REEL STD4NK60Z-1 D4NK60Z IPAK TUBE September 2002 1/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP4NK60Z STB4NK60Z VDS VDGR VGS ID ID Unit STD4NK60Z STD4NK60Z-1 STP4NK60ZFP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V Drain Current (continuous) at TC = 25°C 4 4 (*) 4 A Drain Current (continuous) at TC = 100°C 2.5 2.5 (*) 2.5 A IDM (l ) Drain Current (pulsed) 16 16 (*) 16 A PTOT Total Dissipation at TC = 25°C 70 25 70 W 0.56 0.2 0.56 W/°C Derating Factor VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature - 3000 V 4.5 V/ns 2500 - V °C °C -55 to 150 -55 to 150 ( l ) Pulse width limi ted by safe operating area (1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Rthj-amb Tl TO-220 D 2PAK TO-220FP DPAK IPAK 1.78 5 1.78 °C/W 100 °C/W Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 62.5 °C 300 Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 4 A 120 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS Parameter Test Conditions Min. Typ. Max. 600 Unit Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 2 A 3 V 3.75 4.5 V 1.76 2 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) C iss Coss Crss C oss eq. (3) Parameter Test Conditions Forward Transconductance VDS = 15 V, ID = 2 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Min. 3 S VDS = 25V, f = 1 MHz, VGS = 0 510 67 13 pF pF pF VGS = 0V, V DS = 0V to 480V 38.5 pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 2 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 12 9.5 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, I D = 4 A, VGS = 10V 18.8 3.8 9.8 26 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol Parameter Test Condition s Min. td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, I D = 2 A R G = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 29 16.5 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 4A, R G = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 12 12 19.5 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, di/dt = 100A/µs VDD = 24V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. 136 415 6.1 Max. Unit 4 16 A A 1.6 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 SafeOperatingAreaForTO-220/DPAK/IPAK/D2PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/DPAK/IPAK/D2PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/15 Normalized BVDSS vs Temperature STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 F 0.61 0.88 0.024 0.027 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 0.106 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/15 L4 P011C STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L5 L2 L4 9/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 10/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 0.023 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 11/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 12/15 1 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. MAX. A B 1.5 C 12.8 D 20.2 G N 24.4 100 330 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 D 15.7 1.5 15.9 1.6 0.618 0.626 0.059 0.063 D1 E 1.59 1.65 1.61 1.85 0.062 0.063 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 P1 3.9 11.9 4.1 12.1 0.153 0.161 0.468 0.476 P2 R 1.9 50 2.1 0.075 0.082 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type inch MIN. MAX. BASE QTY 1000 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BULK QTY 1000 MAX. 0.933 0.956 13/15 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. DIM. mm inch MIN. MAX. MIN. 6.8 10.4 7 10.6 0.267 0.275 0.409 0.417 B1 D 1.5 12.1 1.6 0.476 0.059 0.063 D1 1.5 E 1.65 1.85 0.065 0.073 F K0 7.4 2.55 7.6 2.75 0.291 0.299 0.100 0.108 P0 P1 3.9 7.9 4.1 8.1 0.153 0.161 0.311 0.319 P2 1.9 2.1 0.075 0.082 A0 B0 R 40 W 15.7 * on sales type 14/15 MAX. 0.059 1.574 16.3 0.618 0.641 inch MIN. 330 MAX. A B 1.5 C D 12.8 20.2 13.2 0.504 0.520 0.795 G 16.4 18.4 0.645 0.724 N 50 T TAPE MECHANICAL DATA MAX. BASE QTY 2500 12.992 0.059 1.968 22.4 0.881 BULK QTY 2500 STP4NK60Z - STP4NK60ZFP - STB4NK60Z - STD4NK60Z - STD4NK60Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 15/15