STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 STB5BK50Z-1 ■ ■ ■ ■ ■ ■ VDSS RDS(on) 500 500 500 500 500 < 1.5 < 1.5 < 1.5 < 1.5 < 1.5 V V V V V Ω Ω Ω Ω Ω ID Pw 4.4 A 4.4 A 4.4 A 4.4 A 4.4 A 70 W 25 W 70 W 70 W 70 W TYPICAL RDS(on) = 1.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 3 1 TO-220 3 12 2 TO-220FP I2PAK 3 3 2 1 1 IPAK DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP5NK50Z P5NK50Z TO-220 TUBE STP5NK50ZFP P5NK50ZFP TO-220FP TUBE STD5NK50ZT4 D5NK50Z DPAK TAPE & REEL STD5NK50Z-1 D5NK50Z IPAK TUBE STB5NK50Z-1 B5NK50Z I2PAK TUBE April 2003 1/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP5NK50Z STB5NK50Z-1 VDS VDGR VGS V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ± 30 V Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) dv/dt (1) 4.4 4.4 (*) 2.7 (*) 2.7 A 17.6 (*) 17.6 A 70 25 70 W 0.2 0.56 W/°C 0.56 Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature A 2.7 Gate source ESD(HBM-C=100pF, R=1.5KΩ) VISO 4.4 17.6 Total Dissipation at TC = 25°C Derating Factor VESD(G-S) STD5NK50Z STD5NK50Z-1 500 ID PTOT STP5NK50ZFP Drain-source Voltage (VGS = 0) ID IDM () Unit - 3000 V 4.5 V/ns 2500 - V -55 to 150 -55 to 150 °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤4.4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 I2PAK TO-220FP DPAK 1.78 5 1.78 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 4.4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 130 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID =1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.2 A V(BR)DSS 500 Unit 3 V 3.75 4.5 V 1.22 1.5 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Test Conditions Min. VDS =15 V, ID = 2.2 A VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 400V 3.1 S 535 75 17 pF pF pF 45 pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 250 V, ID = 2.2 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 15 10 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, ID = 4.4 A, VGS = 10V 20 4 10 28 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 250 V, ID = 2.2A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 32 15 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 400V, ID = 4.4A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 12 12 20 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 4.4 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =4.4 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Min. Typ. 310 1425 9.2 Max. Unit 4.4 17.6 A A 1.6 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Safe Operating Area For TO-220/DPAK/IPAK/I2PAKSafe Operating Area For TO-220FP Thermal Impedance For TO-220/DPAK/IPAK/I2PAK Thermal Impedance For TO-220FP Output Characteristics 4/14 Transfer Characteristics STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/14 Normalized BVDSS vs Temperature STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 TO-220 MECHANICAL DATA DIM. 8/14 mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 L2 L5 1 2 3 L4 9/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 10/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 11/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 12/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. 1.5 C 12.8 D 20.2 G 16.4 N 50 D 1.5 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 40 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 0.063 K0 15.7 12.992 0.059 P0 R MAX. MAX. D1 W MIN. 330 T TAPE MECHANICAL DATA inch MAX. 0.641 * on sales type 13/14 STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 14/14